# US 10,319,723 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,723 B2 - Document ID: US10319723B2 - Status: Granted - Kind: B2 - Application number: 15/722,016 - Filed: 2017-10-02 - Published: 2018-03-29 - Granted: 2019-06-11 - Earliest claimed: 2010-07-02 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Kiyoshi Kato - Web page: https://patentgrep.com/patent/US10319723B2 ## CPC - H10D 88/00: Three-dimensional [3D] integrated devices - H10B 12/30: {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells} - H10B 41/20: characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels - H10B 41/30: characterised by the memory core region - H10B 41/70: the floating gate being an electrode shared by two or more components - H10B 99/00: Subject matter not provided for in other groups of this subclass - H10B 99/22: {including field-effect components} - H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)} - G11C 16/0433: {comprising cells containing a single floating gate transistor and one or more separate select transistors} - G11C 16/08: Address circuits; Decoders; Word-line control circuits - G11C 16/10: Programming or data input circuits - G11C 16/26: Sensing or reading circuits; Data output circuits - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limit on the number of write operations. The semiconductor device includes a first memory cell including a first transistor and a second transistor, a second memory cell including a third transistor and a fourth transistor, and a driver circuit. The first transistor and the second transistor overlap at least partly with each other. The third transistor and the fourth transistor overlap at least partly with each other. The second memory cell is provided over the first memory cell. The first transistor includes a first semiconductor material. The second transistor, the third transistor, and the fourth transistor include a second semiconductor material. ## Claims ### Claim 1 A semiconductor device comprising: a substrate provided with a driver circuit, the substrate comprising single crystal silicon; a first insulating layer over the substrate; a first transistor over the first insulating layer; a second insulating layer over the first transistor; and a second transistor over the second insulating layer, wherein the driver circuit comprise a third transistor comprising the single crystal silicon, wherein each of the first transistor and the second transistor comprises a channel formation region, the channel formation region comprising an oxide semiconductor, wherein a top surface of a gate of the first transistor is directly connected to a bottom surface of one of a source and a drain of the second transistor, and wherein the first transistor and the second transistor are at least partially overlapped with each other. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein one of a source and a drain of the first transistor is electrically connected to the other one of the source and the drain of the second transistor. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the gate of the first transistor is in contact with the one of the source and the drain of the second transistor. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the driver circuit comprises a selector circuit. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor comprises indium. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor contains hydrogen at a concentration lower than or equal to 5×1019 atoms/cm3. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the oxide semiconductor contains carriers at a concentration lower than or equal to 1×1012/cm3. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein off-state current per micrometer of a channel width of the second transistor is lower than or equal to 100 zA at room temperature. ### Claim 9 A semiconductor device comprising: a substrate provided with a driver circuit, the substrate comprising single crystal silicon; a first insulating layer over the substrate; a first transistor over the first insulating layer; a second insulating layer over the first transistor; a second transistor over the second insulating layer; and a capacitor electrically connected to the first transistor and the second transistor, wherein the driver circuit comprise a third transistor comprising the single crystal silicon, wherein each of the first transistor and the second transistor comprises a channel formation region, the channel formation region comprising an oxide semiconductor, wherein a gate of the first transistor is directly connected to one of a source and a drain of the second transistor, wherein the capacitor overlaps with the first transistor, and wherein the first transistor and the second transistor are at least partially overlapped with each other. ### Claim 10 (depends on 9) The semiconductor device according to claim 9, wherein one of a source and a drain of the first transistor is electrically connected to the other one of the source and the drain of the second transistor. ### Claim 11 (depends on 9) The semiconductor device according to claim 9, wherein the gate of the first transistor is in contact with the one of the source and the drain of the second transistor. ### Claim 12 (depends on 9) The semiconductor device according to claim 9, wherein the driver circuit comprises a selector circuit. ### Claim 13 (depends on 9) The semiconductor device according to claim 9, wherein the oxide semiconductor comprises indium. ### Claim 14 (depends on 9) The semiconductor device according to claim 9, wherein the oxide semiconductor contains hydrogen at a concentration lower than or equal to 5×1019 atoms/cm3. ### Claim 15 (depends on 9) The semiconductor device according to claim 9, wherein the oxide semiconductor contains carriers at a concentration lower than or equal to 1×1012/cm3. ### Claim 16 (depends on 9) The semiconductor device according to claim 9, wherein off-state current per micrometer of a channel width of the second transistor is lower than or equal to 100 zA at room temperature. ### Claim 17 (depends on 9) The semiconductor device according to claim 9, wherein part of the one of the source and the drain of the second transistor is a first electrode of the capacitor. ### Claim 18 A semiconductor device comprising: a substrate provided with a driver circuit, the substrate comprising single crystal silicon; a first insulating layer over the substrate; a first transistor over the first insulating layer; a second insulating layer over the first transistor; a second transistor over the second insulating layer; and a capacitor electrically connected to the first transistor and the second transistor with a first electrode of the capacitor, wherein the driver circuit comprise a third transistor comprising the single crystal silicon, wherein each of the first transistor and the second transistor comprises a channel formation region, the channel formation region comprising an oxide semiconductor, wherein a gate of the first transistor is directly connected to one of a source and a drain of the second transistor, wherein the first electrode of the capacitor overlaps with the gate of the first transistor, and wherein the first transistor and the second transistor are at least partially overlapped with each other. ### Claim 19 (depends on 18) The semiconductor device according to claim 18, wherein one of a source and a drain of the first transistor is electrically connected to the other one of the source and the drain of the second transistor. ### Claim 20 (depends on 18) The semiconductor device according to claim 18, wherein the gate of the first transistor is in contact with the one of the source and the drain of the second transistor. ### Claim 21 (depends on 18) The semiconductor device according to claim 18, wherein the driver circuit comprises a selector circuit. ### Claim 22 (depends on 18) The semiconductor device according to claim 18, wherein the oxide semiconductor comprises indium. ### Claim 23 (depends on 18) The semiconductor device according to claim 18, wherein the oxide semiconductor contains hydrogen at a concentration lower than or equal to 5×1019 atoms/cm3. ### Claim 24 (depends on 18) The semiconductor device according to claim 18, wherein the oxide semiconductor contains carriers at a concentration lower than or equal to 1×1012/cm3. ### Claim 25 (depends on 18) The semiconductor device according to claim 18, wherein off-state current per micrometer of a channel width of the second transistor is lower than or equal to 100 zA at room temperature. ### Claim 26 (depends on 18) The semiconductor device according to claim 18, wherein part of the one of the source and the drain of the second transistor is the first electrode of the capacitor.