# US 10,319,721 B2 · Spacer for dual epi CMOS devices

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- Number: US 10,319,721 B2
- Document ID: US10319721B2
- Status: Granted
- Kind: B2
- Application number: 15/166,560
- Filed: 2016-05-27
- Published: 2017-06-15
- Granted: 2019-06-11
- Earliest claimed: 2015-12-11
- Assignees: International Business Machines Corporation
- Applicants: International Business Machines Corporation
- Inventors: Soon-Cheon Seo
- Web page: https://patentgrep.com/patent/US10319721B2

## CPC

- H10D 84/853: {comprising FinFETs}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0184: {Manufacturing their gate sidewall spacers}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 86/011: {comprising FinFETs}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10P 50/283: {by chemical means}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Aspects of the disclosure include a method for making a semiconductor, including patterning a first transistor having one or more gate stacks on a first source-drain area and second transistor comprising one or more gate stacks on a second source-drain area, forming dielectric spacers on gate stack side walls, depositing a first nitride liner on the first and second transistors. The method also includes masking the second transistor and etching to remove the first nitride material and the spacer from the first source-drain area and growing a first epitaxial layer on the first source-drain area by an epitaxial growth process. The method also includes depositing a second nitride liner on the first and second transistors. The method also includes masking the first transistor. The method also includes etching to remove the second nitride material from the second source-drain area and growing a second epitaxial layer on the second source-drain area by an epitaxial growth process.

## Claims

### Claim 1

A semiconductor device, comprising:
a first semiconductor structure having one or more first gate stacks on an upper surface of a first semiconductor fin that includes a first source-drain area having a horizontal surface on an upper surface of the first source-drain area;
a second semiconductor structure having one or more second gates stacks on an upper surface of a second semiconductor fin that includes a second source-drain area having a horizontal surface on an upper surface of the second source-drain area;
a first spacer on opposing sides of each first gate stack, the first spacer directly disposed on the upper surface of the first semiconductor fin and having a first spacer thickness;
a second spacer on opposing sides of each second gate stack, the second spacer directly disposed on the upper surface of the second semiconductor fin and having a second spacer thickness;
a first flat layer directly disposed on the upper surface of the first semiconductor fin, the first flat layer comprising at least one merged crystalline epitaxial layer disposed on opposing sides of the first source-drain area directly adjacent to a surface of the first spacer opposite the one or more first gate stacks, the first epitaxial layer extending the length of the first source-drain area and covering the horizontal surface of the first source-drain area except areas covered by the one or more first gate stacks; and
a second flat layer directly disposed on the upper surface of the second semiconductor fin, the second flat layer comprising at least one merged crystalline epitaxial layer disposed on opposing sides of the second source-drain area directly adjacent to a surface of the second spacer opposite the one or more second gate stacks;
wherein the first spacer thickness is equal to the second spacer thickness, and
wherein a bottom surface of the first epitaxial layer extends below a bottom of the first gate stacks and a bottom surface of the second epitaxial layer extends below a bottom of the second gate stacks.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the first spacer and the second spacer comprise SiBCN.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, comprising a dielectric layer between a first crystalline epitaxial layer and a second crystalline epitaxial layer among the at least one merged crystalline epitaxial layer.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein the dielectric layer comprises a low-k dielectric material.