# US 10,319,712 B2 · Integrated transistor and protection diode and fabrication method

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- Number: US 10,319,712 B2
- Document ID: US10319712B2
- Status: Granted
- Kind: B2
- Application number: 15/729,894
- Filed: 2017-10-11
- Published: 2018-05-10
- Granted: 2019-06-11
- Earliest claimed: 2016-11-10
- Assignees: Texas Instruments Incorporated
- Applicants: Texas Instruments Incorporated
- Inventors: Haian Lin; Frank Baiocchi
- Web page: https://patentgrep.com/patent/US10319712B2

## CPC

- H10D 89/611: {using diodes as protective elements}
- H10D 8/045: {of PN junction diodes}
- H10D 8/411: {PN diodes having planar bodies}
- H10D 30/0221: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]}
- H10D 30/603: {having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]}
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 62/128: {Anode regions of diodes}
- H10D 62/299: {having lateral doping variations (IGFETs having lightly doped source or drain extensions H10D30/601)}
- H10D 62/378: {Contact regions to the substrate regions}
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 62/60: Impurity distributions or concentrations
- H10D 64/111: {Field plates}
- H10D 64/254: {for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D 62/307: {the doping variations being parallel to the channel lengths}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Disclosed examples provide integrated circuits including a source down transistor with a gate, a body region, an n-type source region, an n-type drain region, a p-type body contact region below the n-type source region which extends to a first depth, along with a protection diode which includes an n-type cathode region, and a p-type anode region below the n-type cathode region, where the breakdown voltage of the protection diode is defined by adjusting the relative doping concentrations and/or the vertical locations of the p-type anode region with respect to the n-type cathode region.

## Claims

### Claim 1

An integrated circuit (IC), comprising:
a p-type semiconductor substrate, including a first substrate region, and a second substrate region spaced from the first substrate region;
a transistor in the first substrate region, including:
a gate disposed over a gate dielectric layer over a top surface of the semiconductor substrate in the first substrate region, and laterally extending between first and second ends,
a p-type body region under a first portion of the gate dielectric layer in the first substrate region,
an n-type source region disposed in a portion of the body region under a second portion of the gate dielectric layer below the first end of the gate in the first substrate region,
a source contact trench etched through a portion of the n-type source region to expose the p-type body region,
a p-type contact region electrically connecting to the exposed p-type body region at a bottom of the source contact trench,
a conductive source contact structure electrically connecting the n-type source region and the p-type contact region,
an n-type drain region disposed below the top surface of the semiconductor substrate in the first substrate region, the n-type drain region including a first portion under a third portion of the gate dielectric layer adjacent to the p-type body region, and a second portion laterally spaced from the second end of the gate, and
an n-type drain contact region disposed in the n-type drain region in the first substrate region laterally spaced from the second end of the gate; and
a protection diode in the second substrate region, including:
an n-type cathode region disposed in the second substrate region below the top surface of the semiconductor substrate, and
an n-type cathode contact region disposed in the n-type cathode region,
a p-type anode region with a doping concentration determined by a desired diode breakdown voltage, the p-type anode region disposed in the second substrate region below the n-type cathode region.

### Claim 2 (depends on 1)

The IC of claim 1, further comprising a first conductive contact structure disposed above the top surface of the semiconductor substrate which electrically connects the gate to the n-type cathode region.

### Claim 3 (depends on 2)

The IC of claim 2, further comprising a second conductive contact structure which contacts the p-type contact region and forms an extension of the conductive source contact structure, the second conductive contact structure spaced from and extending at least partially above the gate and the n-type drain region to form a field plate.

### Claim 4 (depends on 1)

The IC of claim 1, further comprising a first conductive contact structure which contacts the p-type body region and the n-type source region and forms an extension of the conductive source contact structure, the first conductive contact structure spaced from and extending at least partially above the gate and the n-type drain region to form a field plate.

### Claim 5 (depends on 1)

The IC of claim 1, wherein the p-type semiconductor substrate includes:
a p-type base, including p-type silicon; and
a p-type epitaxial silicon layer disposed over the p-type base.

### Claim 6 (depends on 1)

The IC of claim 1, wherein the protection diode in the second substrate region further includes a second n-type cathode region disposed in the n-type cathode region above the p-type anode region.

### Claim 7 (depends on 6)

The IC of claim 6, wherein the second n-type cathode region is vertically spaced from the p-type anode region by a non-zero distance.

### Claim 8 (depends on 6)

The IC of claim 6, further comprising a p-type body contact region disposed below the n-type source region in the p-type body region.

### Claim 9 (depends on 8)

The IC of claim 8, wherein the p-type body contact region and the p-type anode region extend to different depths below the top surface of the semiconductor substrate.

### Claim 10 (depends on 9)

The IC of claim 9, wherein the p-type body contact region extends to a first depth below the top surface of the semiconductor substrate in the first substrate region, wherein the p-type anode region extends to a second depth below the top surface of the semiconductor substrate in the second substrate region, and wherein the second depth is greater than the first depth.

### Claim 11 (depends on 8)

The IC of claim 8, wherein the p-type body contact region and the p-type anode region have different dopant concentrations.

### Claim 12 (depends on 6)

The IC of claim 6, further comprising a first conductive contact structure disposed above the top surface of the semiconductor substrate which electrically connects the gate to the n-type cathode region.

### Claim 13 (depends on 6)

The IC of claim 6, further comprising a first conductive contact structure which forms an extension of the conductive source contact structure, the first conductive contact structure spaced from and extending at least partially above the gate and the n-type drain region to form a field plate.

### Claim 14 (depends on 1)

The IC of claim 1, further comprising a p-type body contact region disposed below the n-type source region in the p-type body region.