# US 10,319,710 B2 · Semiconductor device

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- Number: US 10,319,710 B2
- Document ID: US10319710B2
- Status: Granted
- Kind: B2
- Application number: 15/497,663
- Filed: 2017-04-26
- Published: 2017-11-02
- Granted: 2019-06-11
- Earliest claimed: 2016-04-27
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Yuri Honda; Fumio Harima; Kazuhito Nakai
- Web page: https://patentgrep.com/patent/US10319710B2

## CPC

- H10D 89/105: {adapted for thermal considerations}
- H03F 3/19: with semiconductor devices only
- H03F 3/21: with semiconductor devices only {(H03F3/245 takes precedence)}
- H10D 84/645: {Combinations of only lateral BJTs}
- H10D 84/83: of only insulated-gate FETs [IGFET]
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H03F 2200/408: the output amplifying stage of an amplifier comprising three power stages
- H03F 2200/451: the amplifier being a radio frequency amplifier
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H03F: AMPLIFIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Provided is a semiconductor device with a reduced variation in temperature among a plurality of unit transistors. A semiconductor device includes: a semiconductor substrate; and a transistor group including at least one column in which a plurality of unit transistors are aligned and arranged along a first axis on the semiconductor substrate. A first column of the at least one column includes: a first group of transistors including two of the unit transistors that are adjacent to each other with a first distance therebetween, and a second group of transistors including two of the unit transistors that are adjacent to each other with a second distance therebetween, the first group of transistors is disposed at a position closer to a center of the first column along the first axis than the second group of transistors, and the first distance is larger than the second distance.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor substrate; and
a transistor group including a plurality of columns, each column having a plurality of unit transistors that are aligned and arranged along a Y-axis on the semiconductor substrate,
wherein the plurality of columns include a first column having:
a plurality of rows, each row including a single unit transistor;
a first group of transistors including two of the unit transistors that are adjacent to each other along the Y-axis with a first distance therebetween,
a second group of transistors including two of the unit transistors that are adjacent to each other along the Y-axis with a second distance therebetween, and
a third group of transistors including two of the unit transistors that are adjacent to each other along the Y-axis with a third distance therebetween,
wherein:
the first group of transistors is disposed at a position closer to a center of the first transistor column along the Y-axis than the second group of transistors,
the first distance is larger than the second distance,
the second group of transistors is disposed at a position closer to the center of the first transistor column along the Y-axis than the third group of transistors, and
the second distance is larger than the third distance.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the plurality of columns includes:
a group of second columns disposed on opposing sides of the first column along an X-axis orthogonal to the Y-axis on the semiconductor substrate,
wherein the plurality of unit transistors in the group of second columns are adjacent to each other along the Y-axis with a fourth distance therebetween, and
wherein the fourth distance is smaller than the first distance.

### Claim 3 (depends on 2)

The semiconductor device according to claim 2, wherein
the group of second columns is located on both ends of the transistor group along the X-axis, and
the group of second columns does not include unit transistors at positions along the X-axis opposed to unit transistors located on both ends of the first column along the Y-axis.

### Claim 4 (depends on 2)

The semiconductor device according to claim 2, wherein via holes are formed between the first column and the group of second columns along the Y-axis.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein
the plurality of columns further includes a group of second columns disposed on opposing sides of the first column along an X-axis orthogonal to the Y-axis on the semiconductor substrate,
the plurality of unit transistors in the group of second columns are adjacent to each other along the Y-axis with a fourth distance therebetween, and
the fourth distance is smaller than the first distance.

### Claim 6 (depends on 5)

The semiconductor device according to claim 5, wherein
the group of second columns is located on both ends of the transistor group along the X-axis, and
the group of second columns does not include unit transistors at positions along the X-axis opposed to unit transistors located on both ends of the first column along the Y-axis.