# US 10,319,706 B2 · Micro-LED module and method for fabricating the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,706 B2 - Document ID: US10319706B2 - Status: Granted - Kind: B2 - Application number: 15/818,738 - Filed: 2017-11-20 - Published: 2018-08-16 - Granted: 2019-06-11 - Earliest claimed: 2017-02-10 - Assignees: Lumens Co., Ltd. - Applicants: Lumens Co., Ltd. - Inventors: Taekyung Yoo; Daewon Kim; Seongbok Yoon; Yelim Won; Myungji Moon; Hanbeet Chang; Yongpil Kim; Jaesoon Park - Web page: https://patentgrep.com/patent/US10319706B2 ## CPC - H10W 90/00: Package configurations - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/831: characterised by their shape - H10D 84/85: Complementary IGFETs, e.g. CMOS - H10H 20/0364: {of interconnections} - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/833: Transparent materials - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10W 72/01235: {by plating, e.g. electroless plating or electroplating} - H10W 72/01255: {by using masks} - H10W 72/01257: {by reflowing} - H10W 72/01271: {Cleaning, e.g. oxide removal or de-smearing} - H10W 72/019: {of bond pads} - H10W 72/01938: {in gaseous form, e.g. by CVD or PVD} - H10W 72/072: {of bump connectors} - H10W 72/07235: {Applying EM radiation, e.g. induction heating or using a laser} - H10W 72/07236: {Soldering or alloying} - H10W 72/222: {Multilayered bumps, e.g. a coating on top and side surfaces of a bump core} - H10W 72/223: {characterised by the structure of the outermost layers, e.g. multilayered coatings} - H10W 72/241: {Dispositions, e.g. layouts} - H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu} - H10W 72/255: {of outermost layers of multilayered bumps, e.g. material of a coating} - H10W 72/29: Bond pads specially adapted therefor - H10W 72/923: {Bond pads having multiple stacked layers} - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 72/983: {Reinforcing structures, e.g. collars} - H10W 90/722: {between stacked chips} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A method for fabricating a micro-LED module is disclosed. The method includes: preparing a micro-LED including a plurality of electrode pads and a plurality of LED cells; preparing a submount substrate including a plurality of electrodes corresponding to the plurality of electrode pads; and flip-bonding the micro-LED to the submount substrate through a plurality of solders located between the plurality of electrode pads and the plurality of electrodes. The flip-bonding includes heating the plurality of solders by a laser. ## Claims ### Claim 1 A method for fabricating a micro-LED module comprising: preparing a micro-LED comprising a plurality of electrode pads and a plurality of LED cells; preparing a submount substrate comprising a plurality of electrodes corresponding to the plurality of electrode pads; and flip-bonding the micro-LED to the submount substrate through a plurality of solders located between the plurality of electrode pads and the plurality of electrodes, wherein the micro-LED comprises a substrate and an epilayer comprising the LED cells, wherein the flip-bonding comprises heating the plurality of solders by a plurality of laser beams passing vertically through the micro-LED from one side to the other side of the micro-LED, and the plurality of laser beams comprise laser beams passing through the substrate and the epilayer in which none of the LED cells are present and laser beams passing through the substrate and the epilayer in which the LED cells are present. ### Claim 2 (depends on 1) The method according to claim 1, wherein the individual electrode pads are formed on the LED cells and the flip-bonding comprises heating the solders located between the individual electrode pads and the submount substrate by the plurality of laser beams sequentially passing through the LED cells and the individual electrode pads. ### Claim 3 (depends on 2) The method according to claim 2, wherein the individual electrode pads are transmissive to the plurality of laser beams. ### Claim 4 (depends on 2) The method according to claim 2, wherein the individual electrode pads comprise cavities through which the plurality of laser beams pass. ### Claim 5 (depends on 1) The method according to claim 1, wherein the micro-LED comprises a common electrode pad formed on the surface of the epilayer around the plurality of LED cells and the flip-bonding comprises heating the solder located between the common electrode pad and the submount substrate by the plurality of laser beams sequentially passing through the epilayer and the common electrode pad. ### Claim 6 (depends on 5) The method according to claim 5, wherein the common electrode pad is transmissive to the plurality of laser beams. ### Claim 7 (depends on 5) The method according to claim 5, wherein the common electrode pad comprises a cavity through which the plurality of laser beams pass. ### Claim 8 (depends on 1) The method according to claim 1, further comprising focusing the laser beams on the corresponding solders by focusing lenses. ### Claim 9 (depends on 1) The method according to claim 1, wherein the flip-bonding comprises placing a plurality of laser beam irradiation units in an arrangement corresponding to an arrangement of the plurality of solders at one side of the micro-LED before heating the plurality of solders by the plurality of laser beams passing vertically through the micro-LED from one side to the other side of the micro-LED. ### Claim 10 (depends on 1) The method according to claim 1, wherein a plurality of laser beam irradiation units are placed in an arrangement corresponding to an arrangement of the plurality of solders at one side of the micro-LED before heating the plurality of solders by the plurality of laser beams passing vertically through the micro-LED from one side to the other side of the micro-LED and each of the plurality of laser beam irradiation units comprises an optical guide connected to a laser source, a collimator for making laser beams entering through the optical guide parallel to each other, a beam controller for controlling the cross-sectional size of the parallel laser beams, and a focusing lens for focusing the parallel laser beams whose cross-sectional size is controlled on the corresponding solders. ### Claim 11 (depends on 1) The method according to claim 1, wherein the flip-bonding comprises matching the plurality of solders to the plurality of laser beams in a 1:1 ratio such that the plurality of solders are heated by the plurality of laser beams. ### Claim 12 (depends on 1) The method according to claim 1, wherein the flip-bonding comprises matching a plurality of laser beam irradiation units to the plurality of solders in a 1:1 ratio such that the plurality of solders are heated by laser beams irradiated from the plurality of laser beam irradiation units. ### Claim 13 (depends on 1) The method according to claim 1, wherein the flip-bonding comprises matching a plurality of laser beam irradiation units to the plurality of solders in a 1:n (where n is a natural number equal to or greater than 2) ratio such that two or more of the solders are heated by laser beams irradiated from each of the laser beam irradiation units moving in a linear or zigzag pattern. ### Claim 14 (depends on 1) The method according to claim 1, wherein the flip-bonding comprises matching two or more laser beam irradiation units to two or more solder groups such that each of the laser beam irradiation units heats the solders in the corresponding solder group. ### Claim 15 A micro-LED module comprising: a micro-LED comprising a substrate, an epilayer comprising a plurality of LED cells, second conductive individual electrode pads disposed on the plurality of LED cells, and a first conductive common electrode disposed around the plurality of LED cells; a submount substrate comprising a plurality of electrodes corresponding to the individual electrode pads and the common electrode pad; and solders located between the electrodes and the individual and common electrode pads, wherein the solders are heated by a plurality of laser beams and are then hardened so that the electrodes are connected to the individual electrode pads and the common electrode pad, wherein the plurality of laser beams comprise laser beams passing through the substrate and the epilayer in which none of the LED cells are present and laser beams passing through the substrate and the epilayer in which the LED cells are present. ### Claim 16 (depends on 15) The micro-LED module according to claim 15, wherein the substrate, the epilayer, the individual electrode pads, and the common electrode pad are transmissive to the laser beams such that the solders are heated by the laser beams passing through the micro-LED from one side to the other side of the micro-LED. ### Claim 17 (depends on 15) The micro-LED module according to claim 15, wherein the individual electrode pads are made of a laser beam-transmitting material. ### Claim 18 (depends on 15) The micro-LED module according to claim 15, wherein the individual electrode pads or the common electrode pad comprises cavities through which the laser beams pass.