# US 10,319,697 B2 · Transferring method, manufacturing method, device and electronic apparatus of micro-LED

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- Number: US 10,319,697 B2
- Document ID: US10319697B2
- Status: Granted
- Kind: B2
- Application number: 15/535,683
- Filed: 2015-05-21
- Published: 2017-11-23
- Granted: 2019-06-11
- Earliest claimed: 2015-05-21
- Assignees: Goertek Inc.
- Applicants: Goertek, Inc.
- Inventors: Quanbo Zou; Zhe Wang
- Web page: https://patentgrep.com/patent/US10319697B2

## CPC

- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/018: {Bonding of wafers}
- H10P 72/74: {using temporarily an auxiliary support}
- H10W 72/00: Interconnections or connectors in packages
- H10W 74/014: {using batch processing}
- H10W 90/00: Package configurations
- H10H 20/036: {of packages}
- H10H 20/0364: {of interconnections}
- H10P 72/7414: {the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support}
- H10P 72/7428: {used to support diced chips prior to mounting}
- H10W 72/013: {of die-attach connectors}
- H10W 72/0198: {batch processes}
- H10W 72/07207: {Temporary substrates, e.g. removable substrates}
- H10W 72/07211: {Treating the bond pad before connecting, e.g. by applying flux or cleaning}
- H10W 72/07221: {Aligning}
- H10W 72/07232: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07236: {Soldering or alloying}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07307: {the auxiliary member being a temporary substrate, e.g. a removable substrate}
- H10W 72/07311: {Treating the bonding area before connecting, e.g. by applying flux or cleaning}
- H10W 72/07321: {Aligning}
- H10W 72/07332: {Compression bonding, e.g. thermocompression bonding}
- H10W 72/07336: {Soldering or alloying}
- H10W 72/074: {of anisotropic conductive adhesives}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A transferring method, a manufacturing method, a device and an electronic apparatus of micro-LED. The method for transferring micro-LED, comprises: forming micro-LEDs (202) on a laser-transparent original substrate (201), providing an anisotropic conductive layer (203) on a receiving substrate (204), bringing the micro-LEDs (202) into contact with the anisotropic conductive layer (203) on the receiving substrate (204), irradiating the original substrate (201) with laser from the original substrate side to lift-off the micro-LEDs (202) from the original substrate (201), and processing the anisotropic conductive layer (203), to electrically connect the micro-LEDs (202) with the pads (205′) on the receiving substrate (204).

## Claims

### Claim 1

A method for transferring micro-LEDs, comprising:
forming micro-LEDs on a laser-transparent original substrate;
providing an anisotropic conductive layer on a receiving substrate;
bringing the micro-LEDs into contact with the anisotropic conductive layer on the receiving substrate;
irradiating the laser-transparent original substrate with laser from an original substrate side to lift-off the micro-LEDs from the laser-transparent original substrate; and
processing the anisotropic conductive layer, to electrically connect the micro-LEDs via the anisotropic conductive layer on the receiving substrate,
wherein processing the anisotropic conductive layer further comprises:
applying pressure on the anisotropic conductive layer from a micro-LED side by using an auxiliary substrate, a surface of the auxiliary substrate being coated with a temporary bonding polymer,
bonding the auxiliary substrate with the anisotropic conductive layer via the temporary bonding polymer; and
after applying the pressure, de-bonding the auxiliary substrate via the temporary bonding polymer, to remove the auxiliary substrate.

### Claim 2 (depends on 1)

The method according to claim 1, wherein a temperature of processing the anisotropic conductive layer is between 150° C. and 200° C., the applied pressure is between 1 MPa and 4 MPa, and a time period of applying the pressure is between 10 second and 30 second.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the auxiliary substrate is a flat rigid substrate.

### Claim 4 (depends on 1)

The method according to claim 1, further comprising:
etching the temporary bonding polymer, to expose epitaxial layers of the micro-LEDs;
forming N-metal electrodes on the epitaxial layers of the micro-LEDs; and
performing encapsulation on the N-metal electrodes.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the anisotropic conductive layer is at least one of an anisotropic conductive film, an anisotropic conductive paste and an anisotropic conductive tape.

### Claim 6 (depends on 1)

A method for manufacturing a micro-LED device, comprising transferring a micro-LED to a receiving substrate by using the method according to claim 1.

### Claim 7 (depends on 6)

A micro-LED device, which is manufactured by using the method according to claim 6, wherein the micro-LEDs come into electronic contact with pads on the receiving substrate via the anisotropic conductive layer.

### Claim 8 (depends on 7)

An electronic apparatus, containing a micro-LED device according to claim 7.