# US 10,319,675 B2 · Capacitor embedded with nanocrystals

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,319,675 B2
- Document ID: US10319675B2
- Status: Granted
- Kind: B2
- Application number: 14/995,036
- Filed: 2016-01-13
- Published: 2017-07-13
- Granted: 2019-06-11
- Earliest claimed: 2016-01-13
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Cheng-Chieh Lai; Meng-Ting Yu; Yung-Hsien Wu; Kuang-Hsin Chen
- Web page: https://patentgrep.com/patent/US10319675B2

## CPC

- H10W 20/496: {Capacitor integral with wiring layers}
- H10B 12/315: {with the capacitor higher than a bit line}
- H10D 1/68: Capacitors having no potential barriers
- H10D 1/692: {Electrodes}
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3461: {Nanoparticles}
- H10P 14/40: of conductive or resistive materials
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10D 84/813: {Combinations of field-effect devices and capacitor only}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides one embodiment of a semiconductor structure that includes an interconnection structure formed on a semiconductor substrate; and a capacitor disposed in the interconnection structure. The interconnection structure includes a top electrode; a bottom electrode; a dielectric material layer sandwiched between the top and bottom electrodes; and a nanocrystal layer embedded in the dielectric material layer.

## Claims

### Claim 1

A semiconductor structure, comprising:
an interconnection structure formed on a semiconductor substrate; and
a capacitor disposed in the interconnection structure, wherein the capacitor includes:
a top electrode;
a bottom electrode;
a dielectric material layer sandwiched between the top and bottom electrodes; and
a nanocrystal layer with a first thickness embedded in the dielectric material layer, wherein the dielectric material layer includes a dielectric material extending continuously from the bottom electrode to the top electrode, wherein the nanocrystal layer is embedded in the dielectric material such that a first portion of the dielectric material with a second thickness that does not include nanocrystals is disposed between a bottom surface of the nanocrystal layer and a top surface of the bottom electrode facing away from the semiconductor substrate thereby preventing any portion of the nanocrystal layer from physically contacting the bottom electrode and a second portion of the dielectric material with a third thickness that does not include nanocrystals is disposed between a top surface of the nanocrystal layer facing away from the semiconductor substrate and a bottom surface of the top electrode thereby preventing any portion of the nanocrystal layer from physically contacting the top electrode, wherein the first thickness is smaller than the second and third thicknesses, wherein the first, second, and third thicknesses are uniform thicknesses and are measured parallel to a stacking direction of the semiconductor substrate, the top electrode, the bottom electrode, and the dielectric material layer.

### Claim 2 (depends on 1)

The semiconductor structure of claim 1, wherein the nanocrystal layer includes a semiconductor material.

### Claim 3 (depends on 2)

The semiconductor structure of claim 2, wherein the semiconductor material includes germanium.

### Claim 4 (depends on 1)

The semiconductor structure of claim 1, wherein the nanocrystal layer includes a plurality of polycrystalline grains.

### Claim 5 (depends on 4)

The semiconductor structure of claim 4, wherein the polycrystalline grains are germanium polycrystalline grains.

### Claim 6 (depends on 4)

The semiconductor structure of claim 4, wherein the grain sizes range between 5 angstrom and 40 angstrom.

### Claim 7 (depends on 1)

The semiconductor structure of claim 1, wherein the dielectric material is a high-k dielectric material.

### Claim 8 (depends on 1)

The semiconductor structure of claim 1, wherein the dielectric material is titanium oxide.

### Claim 9 (depends on 1)

The semiconductor structure of claim 1, further comprising
a lower metal layer formed on the semiconductor substrate;
an upper metal layer disposed on the lower metal layer, the upper metal layer having a first metal line in a first region and a second metal line in a second region;
a first conductive feature vertically connecting the first metal line to the top electrode of the capacitor; and
a second conductive feature vertically connecting the second metal line to the bottom electrode of the capacitor.

### Claim 10 (depends on 9)

The semiconductor structure of claim 9, wherein
the bottom electrode of the capacitor is a metal line in the lower metal layer;
the bottom electrode extends from the first region to the second region; and
the capacitor is configured within the first region.

### Claim 11

A semiconductor structure, comprising:
a semiconductor substrate;
an interconnect structure having a first metal layer on the semiconductor substrate and a second metal layer on the first metal layer and being adjacent to the first metal layer; and
a capacitor sandwiched between the first and second metal layers such that the capacitor physically contacts the first and second metal layers, wherein the capacitor includes:
a dielectric material layer;
a bottom electrode;
a top electrode; and
a layer of a plurality of semiconductor polycrystalline grains dispersed in a first portion of the dielectric material layer with a first thickness, wherein the dielectric material layer includes a dielectric material extending continuously from the bottom electrode to the top electrode, wherein the plurality of semiconductor polycrystalline grains are dispersed in the dielectric material such that a second portion of the dielectric material with a second thickness is disposed between the layer of the plurality of semiconductor polycrystalline grains and the bottom electrode thereby preventing any portion of the layer of the plurality of semiconductor polycrystalline grains from physically contacting the bottom electrode and a third portion of the dielectric material is disposed between the layer of the plurality of semiconductor polycrystalline grains and the top electrode thereby preventing any portion of the layer of the plurality of semiconductor polycrystalline grains from physically contacting the top electrode, wherein the first thickness is smaller than the second thickness, wherein the first and second thicknesses are uniform thicknesses and are measured parallel to a stacking direction of the semiconductor substrate, the top electrode, the bottom electrode, and the dielectric material layer.

### Claim 12 (depends on 11)

The semiconductor structure of claim 11, wherein the semiconductor polycrystalline grains are germanium polycrystalline grains.

### Claim 13 (depends on 11)

The semiconductor structure of claim 11, further comprising a field effect transistor (FET) formed on the semiconductor substrate and electrically connected to the bottom electrode of the capacitor.

### Claim 14

A semiconductor capacitor, comprising:
a bottom electrode on a semiconductor substrate;
a top electrode over the bottom electrode;
a titanium oxide layer extending continuously from the bottom electrode to the top electrode; and
a nanocrystal layer with a first thickness that includes a semiconductor material embedded within the titanium oxide layer, wherein a first portion of the titanium oxide layer with a second thickness that does not include nanocrystals is disposed between a bottom surface of the nanocrystal layer and a top surface of the bottom electrode facing away from the semiconductor substrate thereby preventing any portion of the nanocrystal layer from physically contacting the bottom electrode and a second portion of the titanium oxide layer that does not include nanocrystals is disposed between a top surface of the nanocrystal layer facing away from the semiconductor substrate and a bottom surface of the top electrode thereby preventing any portion of the nanocrystal layer from physically contacting the top electrode, wherein the first thickness is smaller than the second thickness, wherein the first and second thicknesses are uniform thicknesses and are measured parallel to a stacking direction of the semiconductor substrate, the top electrode, and the bottom electrode.

### Claim 15 (depends on 14)

The capacitor of claim 14, wherein the nanocrystal layer has a thickness ranging between 0.5 nm and 10 nm.

### Claim 16 (depends on 14)

The capacitor of claim 14, the nanocrystal layer includes germanium having a plurality of polycrystalline grains, wherein the polycrystalline grains have a grain size range between 5 angstrom and 40 angstrom.

### Claim 17 (depends on 14)

The capacitor of claim 14, wherein the titanium oxide layer physically contacts the bottom electrode at a first interface that is free of the nanocrystal layer, and
wherein the titanium oxide layer physically contacts the top electrode at a second interface that is free of the nanocrystal layer.

### Claim 18 (depends on 1)

The semiconductor structure of claim 1, wherein the dielectric material is titanium oxide and the nanocrystal layer includes germanium,
wherein a first portion of the titanium oxide physically contacts the bottom electrode at a first interface that is free of the nanocrystal layer, and
wherein a second portion of the titanium oxide physically contacts the top electrode at a second interface that is free of the nanocrystal layer.

### Claim 19 (depends on 11)

The semiconductor structure of claim 11, wherein the dielectric material is titanium oxide.

### Claim 20 (depends on 1)

The semiconductor structure of claim 1, wherein the bottom electrode is longer than the top electrode.