# US 10,319,674 B2 · Packaged assembly for high density power applications > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,674 B2 - Document ID: US10319674B2 - Status: Granted - Kind: B2 - Application number: 14/877,059 - Filed: 2015-10-07 - Published: 2016-05-05 - Granted: 2019-06-11 - Earliest claimed: 2014-10-29 - Assignees: Infineon Technologies Americas Corp. - Applicants: Infineon Technologies Americas Corp. - Inventors: Franck Ergas - Web page: https://patentgrep.com/patent/US10319674B2 ## CPC - H10W 70/65: Shapes or dispositions of interconnections - H05K 1/181: associated with surface mounted components - H10W 70/479: {on or in insulating or insulated package substrates, interposers, or redistribution layers} - H10W 70/635: {Through-vias} - H10W 76/161: {Containers comprising no base} - H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ## Abstract A packaged assembly for high density power applications includes a case having shelves on opposing walls, and a double-sided substrate disposed on the shelves of the case, the double-sided substrate having a semiconductor die on a first side of the double-sided substrate and circuit elements on a second side of the double-sided substrate. The case includes aluminum silicon (AlSi). The double-sided substrate is secured to the case by an epoxy. The double-sided substrate a thick film substrate and includes beryllium oxide (BeO) or aluminum oxide (Al2O3). The semiconductor die on the first side of the double-sided substrate is coupled to at least one of the circuit elements on the second side of the double-sided substrate by a through substrate via. The packaged assembly also further includes invertible leads coupled to the double-sided substrate by lead frames. ## Claims ### Claim 1 A packaged assembly comprising: a case comprising a first coefficient of thermal expansion and shelves on opposing walls, wherein the case is hermetically sealed, wherein the case further comprises a lid and a bottom plate, and wherein the lid and the bottom plate are made of the same material; a double-sided dielectric substrate disposed on the shelves of the case and comprising a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion and the second coefficient of thermal expansion are closely matched; a semiconductor die mounted on a first side of the double-sided dielectric substrate, wherein the semiconductor die comprises a first major surface attached to the first side of the double-sided dielectric substrate, and a second major surface separated from the case by a gap, wherein the second major surface is parallel to and opposite of the first major surface; circuit elements mounted on a second side of the double-sided dielectric substrate, wherein the double-sided dielectric substrate is secured to the shelves of the case by an epoxy, and the epoxy contacts the double-sided dielectric substrate on the same first side to which the semiconductor die is mounted; and a plurality of leads rotatably coupled to the double-sided dielectric substrate by a plurality of lead frames, wherein each of the plurality of leads extends completely through the case and a corresponding one of the plurality of lead frames, each of the plurality of leads comprises a substantially 90° bend located outside of the case, and each of the plurality of leads is rotatable relative to the case about an axis of rotation that is perpendicular to a respective surface of the case through which each of the plurality of leads passes. ### Claim 2 (depends on 1) The packaged assembly of claim 1, wherein the case comprises an aluminum silicon (AlSi) alloy. ### Claim 3 (depends on 1) The packaged assembly of claim 1, wherein the double-sided dielectric substrate comprises beryllium oxide (BeO) or aluminum oxide (Al2O3). ### Claim 4 (depends on 1) The packaged assembly of claim 1, wherein the semiconductor die on the first side of the double-sided dielectric substrate is coupled to at least one of the circuit elements on the second side of the double-sided dielectric substrate by a through substrate via. ### Claim 5 (depends on 1) The packaged assembly of claim 1, wherein the double-sided dielectric substrate is a thick film substrate. ### Claim 6 (depends on 1) The packaged assembly of claim 1, wherein the semiconductor die includes a pulse width modulator. ### Claim 7 (depends on 1) The packaged assembly of claim 1, wherein the semiconductor die includes at least one vertical conduction semiconductor device. ### Claim 8 (depends on 1) The packaged assembly of claim 1, wherein a point of load converter circuit is formed on the double-sided dielectric substrate. ### Claim 9 (depends on 1) The packaged assembly of claim 1, wherein the lid is only in direct contact with the walls of the case. ### Claim 10 (depends on 1) The packaged assembly of claim 1, wherein the case comprises exactly two shelves. ### Claim 11 A packaged assembly comprising: a case comprising an aluminum silicon (AlSi) alloy; a double-sided substrate disposed on shelves of the case, wherein the double-sided substrate comprises a semiconductor die on a first side of the double-sided substrate coupled to at least one circuit element on a second side of the double-sided substrate; and a plurality of leads rotatably coupled to the double-sided substrate by a plurality of lead frames allowing each of the plurality of leads to be inverted from a first position to a second position, wherein each of the plurality of leads passes through the case and a corresponding one of the plurality of lead frames, each of the plurality of leads comprises a substantially 90° bend located outside of the case, each of the plurality of leads is rotatable relative to the case about an axis of rotation that is perpendicular to a respective surface of the case through which each of the plurality of leads passes, in the first position the substantially 90° bend of each of the plurality of leads is directed toward a top surface of the case, and in the second position the substantially 90° bend of each of the plurality of leads is directed toward a bottom surface of the case, the bottom surface being opposite the top surface. ### Claim 12 (depends on 11) The packaged assembly of claim 11, wherein the shelves are on opposing walls of the case. ### Claim 13 (depends on 11) The packaged assembly of claim 11, wherein the double-sided substrate comprises beryllium oxide (BeO) or aluminum oxide (Al2O3). ### Claim 14 (depends on 11) The packaged assembly of claim 11, wherein the semiconductor die on the first side of the double-sided substrate is coupled to the at least one circuit element on the second side of the double-sided substrate by a through substrate via. ### Claim 15 (depends on 11) The packaged assembly of claim 11, wherein the double-sided substrate is a thick film substrate. ### Claim 16 (depends on 11) The packaged assembly of claim 11, wherein the semiconductor die includes a pulse width modulator. ### Claim 17 (depends on 11) The packaged assembly of claim 11, wherein the semiconductor die comprises at least one vertical conduction semiconductor device. ### Claim 18 (depends on 11) The packaged assembly of claim 11, wherein the double-sided substrate is secured to the case by an epoxy. ### Claim 19 (depends on 11) The packaged assembly of claim 11, wherein the double-sided substrate is hermetically sealed within the case. ### Claim 20 A packaged assembly comprising: a package casing; a first ledge extending from a first inner sidewall of the package casing; a second ledge extending from a second inner sidewall of the package casing, the first inner sidewall facing the second inner sidewall; and a double-sided dielectric substrate supported by the first ledge and the second ledge, wherein the double-sided dielectric substrate comprises a semiconductor die on a first side of the double-sided dielectric substrate and a capacitor/inductor on a second side of the double-sided dielectric substrate; and a plurality of leads rotatably coupled to the double-sided dielectric substrate by a plurality of lead frames, wherein each of the plurality of leads extends completely through the package casing and a corresponding one of the plurality of lead frames, each of the plurality of leads comprises a substantially 90° bend located outside of the package casing, and each of the plurality of leads is rotatable relative to the package casing about an axis of rotation that is perpendicular to a respective surface of the package casing through which each of the plurality of leads passes. ### Claim 21 (depends on 20) The packaged assembly of claim 20, wherein a first coefficient of thermal expansion of the package casing and a second coefficient of thermal expansion of the double-sided dielectric substrate are closely matched. ### Claim 22 (depends on 20) The packaged assembly of claim 20, wherein the package casing is hermetically sealed.