# US 10,319,667 B2 · Electronic device and method of fabricating the same

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- Number: US 10,319,667 B2
- Document ID: US10319667B2
- Status: Granted
- Kind: B2
- Application number: 15/642,284
- Filed: 2017-07-05
- Published: 2018-03-01
- Granted: 2019-06-11
- Earliest claimed: 2016-08-24
- Assignees: Fujitsu Limited
- Applicants: Fujitsu Limited
- Inventors: Shoichi Miyahara; Aki Dote; Hideki Kitada
- Web page: https://patentgrep.com/patent/US10319667B2

## CPC

- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P 14/44: Physical vapour deposition [PVD]
- H10W 20/023: {the interconnections being through-semiconductor vias}
- H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes}
- H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates}
- H10W 20/2125: {Top-view shapes}
- H10W 20/4421: {the principal metal being copper}
- H10W 20/491: {Antifuses, i.e. interconnections changeable from non-conductive to conductive}
- H10W 70/095: {of vias therein}
- H10W 70/635: {Through-vias}
- H10W 90/00: Package configurations
- H10W 72/01: {Manufacture or treatment}
- H10W 90/26: the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
- H10W 90/297: {characterised by the through-semiconductor vias [TSVs] in the stacked chips}
- H10W 90/722: {between stacked chips}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An electronic device includes: a substrate that includes a first penetration hole; a first electrode that is located on a first surface of the substrate so as to cover the first penetration hole; and a first penetrating electrode that is located in the first penetration hole and is in contact with or away from the first electrode depending on temperature.

## Claims

### Claim 1

An electronic device comprising:
a substrate that includes a first penetration hole;
a first electrode that is formed on a first surface of the substrate and covers the first penetration hole;
a first penetrating electrode that is formed in the first penetration hole and is in contact with or away from the first electrode depending on temperature;
a second electrode that is formed on the first surface of the substrate and covers a second penetration hole, the second penetration hole being formed in the substrate and having a diameter greater than a diameter of the first penetration hole;
a second penetrating electrode that is formed in the second penetration hole and is in contact with the second electrode regardless of the temperature; and
a detection circuit configured to detect whether the first penetrating electrode is in contact with or away from the first electrode.

### Claim 2 (depends on 1)

The electronic device according to claim 1, wherein
the first penetrating electrode is away from the first electrode at a temperature less than a certain temperature and is in contact with the first electrode at a temperature equal to or greater than the certain temperature.

### Claim 3 (depends on 1)

The electronic device according to claim 1, wherein
the first electrode comprising:
a first layer, which is to be in contact with the first penetrating electrode, having a melting point greater than a melting point of the first penetrating electrode; and
a second layer being formed on the first layer, having a resistivity lower than a resistivity of the first layer and having a melting point less than a melting point of the first layer.

### Claim 4 (depends on 1)

The electronic device according to claim 1, wherein
a face along which the first electrode and the first penetrating electrode are in contact with each other bends outward so that a center of the face is located further out than the first surface of the substrate.

### Claim 5 (depends on 1)

The electronic device according to claim 1, further comprising:
another substrate that is stacked on the substrate.

### Claim 6 (depends on 1)

The electronic device according to claim 1, wherein the substrate is a semiconductor substrate.

### Claim 7 (depends on 1)

The electronic device according to claim 1, wherein the substrate is an insulating substrate.

### Claim 8 (depends on 1)

The electronic device according to claim 1, wherein
the substrate is a silicon substrate, and
the first penetrating electrode includes a copper layer.

### Claim 9 (depends on 1)

The electronic device according to claim 1, wherein
the first penetrating electrode is in contact with the first electrode at a temperature less than a certain temperature and is away from the first electrode at a temperature equal to or greater than the certain temperature.

### Claim 10

An electronic device comprising:
a substrate that includes a first penetration hole;
a first electrode that is formed on a first surface of the substrate and covers the first penetration hole;
a first penetrating electrode that is formed in the first penetration hole and is in contact with or away from the first electrode depending on temperature, and
a detection circuit configured to detect whether the first penetrating electrode is in contact with or away from the first electrode,
wherein
the first electrode comprising:
a first layer, which is to be in contact with the first penetrating electrode, having a melting point greater than a melting point of the first penetrating electrode; and
a second layer being formed on the first layer, having a resistivity lower than a resistivity of the first layer and having a melting point less than a melting point of the first layer.

### Claim 11

An electronic device comprising:
a substrate that includes a first penetration hole;
a first electrode that is formed on a first surface of the substrate and covers the first penetration hole;
a first penetrating electrode that is formed in the first penetration hole and is in contact with or away from the first electrode depending on temperature, and
a detection circuit configured to detect whether the first penetrating electrode is in contact with or away from the first electrode,
wherein
a face along which the first electrode and the first penetrating electrode are in contact with each other bends outward so that a center of the face is located further out than the first surface of the substrate.

### Claim 12

An electronic device comprising:
a substrate that includes a first penetration hole;
a first electrode that is formed on a first surface of the substrate and covers the first penetration hole;
a first penetrating electrode that is formed in the first penetration hole and is in contact with or away from the first electrode depending on temperature, and
a detection circuit configured to detect whether the first penetrating electrode is in contact with or away from the first electrode,
wherein the substrate is an insulating substrate.