# US 10,319,664 B2 · Bonded body, substrate for power module with heat sink, heat sink, method for producing bonded body, method for producing substrate for power module with heat sink, and method for producing heat sink

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- Number: US 10,319,664 B2
- Document ID: US10319664B2
- Status: Granted
- Kind: B2
- Application number: 15/566,385
- Filed: 2016-04-11
- Published: 2018-03-29
- Granted: 2019-06-11
- Earliest claimed: 2015-04-16
- Assignees: Mitsubishi Materials Corporation
- Applicants: Mitsubishi Materials Corporation
- Inventors: Nobuyuki Terasaki; Yoshiyuki Nagatomo
- Web page: https://patentgrep.com/patent/US10319664B2

## CPC

- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- B23K 20/02: by means of a press {; Diffusion bonding}
- B23K 20/26: Auxiliary equipment
- C04B 35/645: Pressure sintering
- C04B 37/00: Joining burned ceramic articles with other burned ceramic articles or other articles by heating {(soldering and welding materials B23K35/24; laminated products B32B, E04C)}
- C04B 37/026: {consisting of metals or metal salts}
- H05K 1/0203: {Cooling of mounted components (H05K1/0272 takes precedence)}
- H05K 1/0204: {using means for thermal conduction connection in the thickness direction of the substrate (H05K1/0207 takes precedence)}
- H05K 1/181: associated with surface mounted components
- H05K 7/20: Modifications to facilitate cooling, ventilating, or heating
- H10W 40/037: {Assembling together parts thereof}
- H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections
- H10W 40/251: {Organics}
- H10W 40/47: by flowing liquids, e.g. forced water cooling
- H10W 40/60: Securing means for detachable heating or cooling arrangements, e.g. clamps
- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 70/68: Shapes or dispositions thereof
- H10W 70/6875: {being on a metallic substrate, e.g. insulated metal substrates [IMS]}
- B23K 2103/10: Aluminium or alloys thereof
- B23K 2103/12: Copper or alloys thereof
- B23K 2103/18: Dissimilar materials
- B23K 2103/26: {Alloys of Nickel and Cobalt and Chromium}
- C04B 2235/6581: Total pressure below 1 atmosphere, e.g. vacuum
- C04B 2237/121: based on aluminium
- C04B 2237/128: The active component for bonding being silicon
- C04B 2237/343: Alumina or aluminates
- C04B 2237/366: Aluminium nitride
- C04B 2237/368: Silicon nitride
- C04B 2237/402: Aluminium
- C04B 2237/704: of one or more of the ceramic layers or articles
- C04B 2237/706: of one or more of the metallic layers or articles
- C04B 2237/708: of one or more of the interlayers
- H05K 1/0272: {Adaptations for fluid transport, e.g. channels, holes}
- H10W 72/073: {of die-attach connectors}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

A bonded body is provided in which an aluminum alloy member formed from an aluminum alloy, and a metal member formed from copper, nickel, or silver are bonded to each other. The aluminum alloy member is constituted by an aluminum alloy in which a concentration of Si is in a range of 1 mass % to 25 mass %. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A compound layer, which is formed through diffusion of Al of the aluminum alloy member and a metal element of the metal member, is provided at a bonding interface between the aluminum alloy member and the metal member. A Mg-concentrated layer, in which a concentration of Mg is to 3 mass % or greater, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 μm to 30 μm.

## Claims

### Claim 1

A bonded body, comprising: an aluminum alloy member formed from an aluminum alloy, and a metal member formed from copper, nickel, or silver are bonded to each other,
wherein the aluminum alloy member is constituted by an aluminum alloy in which a concentration of Si is in a range of 5 mass % to 25 mass %,
the aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding,
a compound layer, which is formed through diffusion of Al of the aluminum alloy member and a metal element of the metal member, is provided at a bonding interface between the aluminum alloy member and the metal member, and
a Mg-concentrated layer, in which a concentration of Mg is 4.9 mass % or greater in a region that ranges from the bonding surface to 50 μm in the depth direction, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 μm to 30 μm.

### Claim 2 (depends on 1)

The bonded body according to claim 1,
wherein the compound layer has a structure in which three kinds of intermetallic compounds are laminated,
wherein a Cu layer is formed of the metal member that is copper, and
wherein in the order from the aluminum alloy member side toward the Cu layer side, a θ-phase and a η2-phase are laminated along the bonding interface between the aluminum alloy member and the Cu layer, and at least one phase among a ζ2-phase, a δ-phase, and a γ2-phase is laminated.

### Claim 3 (depends on 2)

The bonded body according to claim 2,
wherein at the bonding interface between the compound layer and the Cu layer, oxides are dispersed in a layer shape along the bonding interface.

### Claim 4 (depends on 3)

The bonded body according to claim 3,
wherein the oxides are dispersed at the inside of the θ-phase, the η2-phase, or at least one phase among the ζ2-phase, the δ-phase, and the γ2-phase in a layer shape.

### Claim 5 (depends on 1)

The bonded body according to claim 1,
wherein at the bonding interface between the compound layer and the metal member, oxides are dispersed in a layer shape along the bonding interface.

### Claim 6 (depends on 1)

The bonded body according to claim 1,
the thickness of the Mg-concentrated layer is in a range of 1 μm to 17 μm.

### Claim 7

A power module substrate with heat sink, comprising:
an insulating layer;
a circuit layer that is formed on one surface of the insulating layer;
a metal layer that is formed on the other surface of the insulating layer; and
a heat sink that is disposed on a surface, which is opposite to the insulating layer, of the metal layer,
wherein in the metal layer, a bonding surface with the heat sink is constituted by copper, nickel, or silver,
in the heat sink, a bonding surface with the metal layer is constituted by an aluminum alloy in which a concentration of Si is in a range of 5 mass % to 25 mass %,
the heat sink and the metal layer are subjected to solid-phase diffusion bonding,
a compound layer, which is formed through diffusion of Al of the heat sink and a metal element that constitutes the bonding surface of the metal layer, is provided at a bonding interface between the heat sink and the metal layer, and
a Mg-concentrated layer, in which a concentration of Mg is 4.9 mass % or greater in a region that ranges from the bonding surface to 50 μm in the depth direction, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 μm to 30 μm.

### Claim 8

A heat sink, comprising:
a heat sink main body; and
a metal member layer that is bonded to the heat sink main body,
wherein the metal member layer is formed from copper, nickel, or silver,
the heat sink main body is constituted by an aluminum alloy in which a concentration of Si is in a range of 5 mass % to 25 mass %,
the heat sink main body and the metal member layer are subjected to solid-phase diffusion bonding,
a compound layer, which is formed through diffusion of Al of the heat sink main body and a metal element that constitutes the metal member layer, is provided at a bonding interface between the heat sink main body and the metal member layer, and
a Mg-concentrated layer, in which a concentration of Mg is 4.9 mass % or greater in a region that ranges from the bonding surface to 50 μm in the depth direction, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 μm to 30 μm.

### Claim 9 (depends on 8)

The heat sink according to claim 8,
wherein the compound layer has a structure in which three kinds of intermetallic compounds are laminated,
wherein a Cu layer is formed of the metal member that is copper, and
wherein in the order from the heat sink main body side toward the Cu layer side, a θ-phase and a η2-phase are laminated along the bonding interface between the heat sink main body and the Cu layer, and at least one phase among a ζ2-phase, a δ-phase, and a γ2-phase is laminated.

### Claim 10 (depends on 9)

The heat sink according to claim 9,
wherein at the bonding interface between the compound layer and the Cu layer, oxides are dispersed in a layer shape along the bonding interface.

### Claim 11 (depends on 10)

The heat sink according to claim 10,
wherein the oxides are dispersed at the inside of the θ-phase, the η2-phase, or at least one phase among the ζ2-phase, the δ-phase, and the γ2-phase in a layer shape.

### Claim 12 (depends on 8)

The heat sink according to claim 8,
wherein at the bonding interface between the compound layer and the metal member, oxides are dispersed in a layer shape along the bonding interface.

### Claim 13 (depends on 8)

The heat sink according to claim 8,
the thickness of the Mg-concentrated layer is in a range of 1 μm to 17 μm.