# US 10,319,661 B2 · Semiconductor device and method of manufacturing the same

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- Number: US 10,319,661 B2
- Document ID: US10319661B2
- Status: Granted
- Kind: B2
- Application number: 15/725,303
- Filed: 2017-10-05
- Published: 2018-07-19
- Granted: 2019-06-11
- Earliest claimed: 2017-01-19
- Assignees: Mitsubishi Electric Corporation
- Applicants: Mitsubishi Electric Corporation
- Inventors: Hayato Nagamizu; Takuro Mori; Yoshitaka Otsubo
- Web page: https://patentgrep.com/patent/US10319661B2

## CPC

- H10W 40/10: Arrangements for heating
- H10W 40/037: {Assembling together parts thereof}
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 70/20: Conductive package substrates serving as an interconnection, e.g. metal plates (leadframes H10W70/40)
- H10W 70/65: Shapes or dispositions of interconnections
- H10W 76/136: having other interconnections perpendicular to the conductive base
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10W 74/01: Manufacture or treatment
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 76/15: Containers comprising an insulating or insulated base
- H10W 76/47: Solid or gel fillings
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In a semiconductor device, an outer peripheral case body has guiding portions formed therein as a plurality of recesses. The plurality of guiding portions each include an upper end opening. The outer peripheral case body has inner peripheral side openings formed in its inner peripheral surface, each of which is continuous with the upper end opening, extends from an upper end face toward a base body and is continuous with the guiding portion. The first insertion portion is inserted into a first guiding portion of the plurality of guiding portions. The first external terminal portion is continuous with the first insertion portion and extends through the upper end opening in the first guiding portion to outside of the outer peripheral case body. The first connection terminal portion is continuous with the first insertion portion and connected to a conductive pattern through the inner peripheral side opening.

## Claims

### Claim 1

A semiconductor device comprising:
a base body;
an insulating plate disposed on a surface of the base body;
a conductor layer formed on a surface of the insulating plate;
a semiconductor element connected to the conductor layer; and
an outer peripheral case body disposed to surround an outer periphery of the base body,
the outer peripheral case body having a plurality of recesses formed therein,
the plurality of recesses each including an upper end opening that opens at an upper end face of the outer peripheral case body opposite to the base body,
the outer peripheral case body having inner peripheral side openings formed in an inner peripheral surface of the case body, each side opening continuous with the upper end opening of a respective recess and extending from the upper end face toward the base body and is continuous with the respective recess,
in a circumferential direction of the outer peripheral case body, each inner peripheral side opening has a width narrower than a width of each recess,
the semiconductor device further comprising
a terminal component including:
a first insertion portion including a first portion, inserted into a first recess of the plurality of recesses in an insertion direction,
a first external terminal portion which is continuous with the first insertion portion and extends through the upper end opening in the first recess to outside of the outer peripheral case body, and
a first connection terminal portion, which is continuous with the first insertion portion, includes at least second and third portions, extends through the inner peripheral side opening of the first recess onto the conductor layer, and is directly connected to the conductor layer, and
a resin layer at least sealing the semiconductor element and the first connection terminal portion in a region surrounded by the insulating plate and the outer peripheral case body, wherein
the first portion and the third portion are wider than the second portion from one end to another end of the terminal component in a width direction perpendicular to the insertion direction.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
the base body and the insulating plate are integrated together.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein
the plurality of recesses include a second recess adjacent to the first recess,
the terminal component includes a second insertion portion inserted into the second recess, and a second external terminal portion which is continuous with the second insertion portion and extends through the upper end opening in the second recess to outside of the outer peripheral case body, and
the first connection terminal portion is configured to extend to a position adjacent to the second insertion portion and to be continuous with the second insertion portion.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein
the first connection terminal portion includes an inclined portion inclined relative to a surface of the conductor layer from the insertion portion to the conductor layer.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein
a notch is formed at a boundary between the first insertion portion and the first connection terminal portion, and
a portion of the outer peripheral case body that forms a sidewall of the inner peripheral side opening of the first recess is partially disposed on an inner side of the notch.

### Claim 6 (depends on 1)

The semiconductor device according claim 1, wherein
the first external terminal portion includes an elastically deformable portion whose length can be varied in a direction in which the first external terminal portion extends.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein
the first connection terminal portion is connected to the conductor layer with an ultrasonic bonded portion interposed therebetween.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein
the first connection terminal portion is connected to the conductor layer using solder.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein
the case body overlaps the periphery of base body and the periphery of the insulating plate when viewed in a direction of insertion of the terminal component.

### Claim 10 (depends on 1)

The device of claim 1 wherein the first connection terminal portion includes a fourth portion narrower in the width direction than the third portion and makes the direct connection to the conductive layer.

### Claim 11 (depends on 1)

The device of claim 1 wherein the case body comprises a rigid material.

### Claim 12

A method of manufacturing a semiconductor device, comprising:
preparing a stacked body including a base body, an insulating plate disposed on a surface of the base body, a conductor layer formed on a surface of the insulating plate, and a semiconductor element connected to the conductor layer; and
connecting an outer peripheral case body to the stacked body so as to surround an outer periphery of the base body,
the outer peripheral case body having a plurality of recesses formed therein,
the plurality of recesses each including an upper end opening that opens at an upper end face of the outer peripheral case body opposite to the base body,
the outer peripheral case body having inner peripheral side openings formed in an inner peripheral surface of the case body, each side opening continuous with the upper end opening of a respective recess and extending from the upper end face toward the base body and is continuous with the respective recess,
in a circumferential direction of the outer peripheral case body, each inner peripheral side opening has a width narrower than a width of each recess,
the method further comprising
inserting a terminal component through the upper end opening into a first recess of the plurality of recesses,
the terminal component including:
a first insertion portion including a first portion inserted into the first recess in a first insertion direction,
a first external terminal portion which is continuous with the first insertion portion and extends through the upper end opening in the first recess to outside of the outer peripheral case body, and
a first connection terminal portion, which is continuous with the first insertion portion, includes at least second and third portions, and extends through the inner peripheral side opening of the first recess onto the conductor layer,
the method further comprising;
directly connecting the first connection terminal portion and the conductor layer, and
forming a resin layer at least sealing the semiconductor element and the first connection terminal portion in a region surrounded by the insulating plate and the outer peripheral case body, wherein
the first portion and the third portion are wider than the second portion from one end to another end of the terminal component in a width direction perpendicular to the insertion direction.

### Claim 13 (depends on 12)

The method of manufacturing a semiconductor device according to claim 12, wherein inserting a terminal component through the upper end opening into a first recess of the plurality of recesses is performed after connecting the outer peripheral case body to the stacked body.

### Claim 14 (depends on 12)

The method of claim 12 wherein the first connection terminal portion includes a fourth portion narrower than the third portion in the width direction and makes the direct connection to the conductive layer.

### Claim 15 (depends on 12)

The method of claim 12 wherein the case body comprises a rigid material.
