# US 10,319,656 B2 · Semiconductor device and electronic apparatus encapsulated in resin with embedded filler particles

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- Number: US 10,319,656 B2
- Document ID: US10319656B2
- Status: Granted
- Kind: B2
- Application number: 15/258,654
- Filed: 2016-09-07
- Published: 2017-03-09
- Granted: 2019-06-11
- Earliest claimed: 2015-09-08
- Assignees: Seiko Epson Corporation
- Applicants: Seiko Epson Corporation
- Inventors: Tomoyuki Furuhata
- Web page: https://patentgrep.com/patent/US10319656B2

## CPC

- H10W 74/473: {containing a filler}
- H10W 20/43: Layouts of interconnections
- H10W 20/4405: {the principal metal being aluminium}
- H10W 20/4421: {the principal metal being copper}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a semiconductor substrate, an analog circuit block including an active element arranged in the semiconductor substrate, a metal layer having a slit or a plurality of metal interconnects arranged in parallel, positioned above the analog circuit block, and a resin layer containing a filler, positioned above at least the metal layer or the plurality of metal interconnects. In the case of forming a semiconductor device by sealing a semiconductor chip with resin having a filler mixed therein, according to this semiconductor device, it is possible to suppress lowering of the level of precision of the electric characteristics of the analog circuit, and a variation in the characteristics or a change in the characteristics, in a mold packaging process, without using special materials or production methods.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor substrate;
an analog circuit block including an active element arranged in the semiconductor substrate;
a metal layer with a serpentine structure, the metal layer having a slit that extends only partway through the metal layer, the metal layer positioned above the analog circuit block; and
a resin layer containing a filler, positioned above at least the metal layer, wherein a width of the slit is smaller than a particle size of the filler.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein an area of the slit of the metal layer is smaller than 20% of an area of the metal layer.

### Claim 3 (depends on 1)

An electronic apparatus comprising the semiconductor device according to claim 1.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, further comprising:
digital circuit blocks;
a plurality of intra-block interconnects positioned above the digital circuit blocks; and
a plurality of inter-block interconnects.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, wherein the intra-block interconnects are metal interconnects for establishing electrical connection inside the digital circuit blocks, and the inter-block interconnects are metal interconnects for electrically connecting the plurality of digital circuit blocks.

### Claim 6 (depends on 4)

The semiconductor device according to claim 4, wherein the metal interconnects comprise aluminum, an aluminum alloy obtained by mixing approximately 0.5% of copper in aluminum, or copper.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the metal layer is not electrically connected to other metal interconnects or circuit elements.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the metal layer is electrically connected to the semiconductor substrate so that a substrate potential is applied thereto.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the metal layer is electrically connected to a metal interconnect to which a reference potential or a power source potential of the analog circuit block is supplied.

### Claim 10 (depends on 1)

The semiconductor device according to claim 1, wherein the metal layer comprises aluminum, an aluminum alloy obtained by mixing approximately 0.5% of copper in aluminum, or copper.

### Claim 11 (depends on 1)

The semiconductor device according to claim 1, wherein the resin layer comprises epoxy resin or a silica particle.

### Claim 12 (depends on 4)

The semiconductor device according to claim 4, wherein the resin layer comprises epoxy resin or a silica particle.