# US 10,319,651 B2 · Shorting bar structure and method for manufacturing the same and thin film transistor substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,651 B2 - Document ID: US10319651B2 - Status: Granted - Kind: B2 - Application number: 15/680,328 - Filed: 2017-08-18 - Published: 2018-07-12 - Granted: 2019-06-11 - Earliest claimed: 2017-01-06 - Assignees: Boe Technology Group Co., Ltd.; Fuzhou Boe Optoelectronics Technology Co., Ltd. - Applicants: BOE Technology Group Co., Ltd.; Fuzhou BOE Optoelectronics Technology Co., Ltd. - Inventors: Yong Wang; Jaeyoung Joo; Hongyan Guo; Yang Yu; Cheong Yo Seop; Zongtian Xie; Zengyang Jiang; Cundui Tang; Huailiang Wu - Web page: https://patentgrep.com/patent/US10319651B2 ## CPC - H10P 74/273: {Interconnections for measuring or testing, e.g. probe pads} - H10P 74/207: {Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The present disclosure provides a shorting bar structure and a method for manufacturing the same, and a Thin Film Transistor (TFT) substrate. The shorting bar structure comprises: a test wire; a test probe contact part connected to the test wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the test wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the test wire to the wire under test. ## Claims ### Claim 1 A shorting bar structure, comprising: a conductive wire; a test probe contact part connected to the conductive wire and configured to be able to contact with a test probe; and at least one PN junction structure located between the conductive wire and at least one wire under test, and configured to allow a test signal to be unidirectionally transmittable in a direction from the conductive wire to the wire under test. ### Claim 2 (depends on 1) The shorting bar structure according to claim 1, wherein the at least one PN structure is located above or below the at least one wire under test. ### Claim 3 (depends on 1) The shorting bar structure according to claim 1, wherein when a test voltage to be applied is negative, a P-type semiconductor layer of the at least one PN junction structure is connected to the at least one wire under test, and an N-type semiconductor layer of the at least one PN junction structure is connected to the conductive wire. ### Claim 4 (depends on 1) The shorting bar structure according to claim 1, wherein when a test voltage to be applied is positive, an N-type semiconductor layer of the at least one PN junction structure is connected to the at least one wire under test, and a P-type semiconductor layer of the at least one PN junction structure is connected to the conductive wire. ### Claim 5 (depends on 1) The shorting bar structure according to claim 1, wherein the test probe contact part has a connection region and a contact region, and wherein the contact region has a width greater than that of the connection region. ### Claim 6 (depends on 1) The shorting bar structure according to claim 1, wherein the shorting bar structure comprises two test probe contact parts located on the two ends of the conductive wire, respectively. ### Claim 7 (depends on 1) The shorting bar structure according to claim 1, wherein the shorting bar structure is arranged on a Thin Film Transistor (TFT) substrate. ### Claim 8 (depends on 7) The shorting bar structure according to claim 7, wherein the conductive wire is arranged on the “TFT” substrate outside a region in which bonding wires are formed. ### Claim 9 (depends on 7) The shorting bar structure according to claim 7, wherein the conductive wire is arranged on the TFT substrate between a region in which bonding wires are formed and a region on which a color filter substrate is superimposed. ### Claim 10 (depends on 7) The shorting bar structure according to claim 7, wherein the wire under test is a data line or a gate line. ### Claim 11 (depends on 1) A method for manufacturing a shorting bar structure of claim 1, the method comprising: forming a conductive wire in a region in which a wire under test is to be arranged; forming a test probe contact part outside the region in which the wire under test is to be arranged, so that the test probe contact part is connected to the conductive wire; and forming at least one PN junction structure on the conductive wire, wherein the PN junction structure is formed between the conductive wire and the wire under test to be formed, and wherein the PN junction structure allows a test signal to be unidirectionally transmittable in a direction from the conductive wire to the wire under test to be formed. ### Claim 12 (depends on 1) A method for manufacturing a shorting bar structure of claim 1, the method comprising: forming at least one PN junction structure on at least one wire under test; forming a conductive wire connected to the PN junction structure on the PN junction structure; and forming a test probe contact part outside a region in which the wire under test is arranged, so that the test probe contact part is connected to the wire under test, wherein the PN junction structure allows a test signal to be unidirectionally transmittable in a direction from the conductive wire to the wire under test. ### Claim 13 (depends on 1) A Thin Film Transistor (TFT) substrate, comprising: at least one wire under test; and at least one shorting bar structure according to claim 1, wherein the shorting bar structure is connected to the wire under test. ### Claim 14 (depends on 13) The TFT substrate according to claim 13, wherein the at least one wire under test is divided into at least one group, and wherein the at least one shorting bar structure is connected to the at least one group in one-to-one manner.