# US 10,319,626 B1 · Interconnects with cuts formed by block patterning

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- Number: US 10,319,626 B1
- Document ID: US10319626B1
- Status: Granted
- Kind: B1
- Application number: 15/834,151
- Filed: 2017-12-07
- Published: 2019-06-13
- Granted: 2019-06-11
- Earliest claimed: 2017-12-07
- Assignees: Globalfoundries Inc.
- Applicants: GLOBALFOUNDRIES Inc.
- Inventors: Minghao Tang; Rui Chen; Yuping Ren
- Web page: https://patentgrep.com/patent/US10319626B1

## CPC

- H10W 20/089: {using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning}
- H10P 76/405: {characterised by their composition, e.g. multilayer masks}
- H10P 76/4083: {characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks}
- H10P 76/4088: {Processes for improving the resolution of the masks}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10P 76/4085: {characterised by the processes involved to create the masks}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Methods of fabricating an interconnect structure. A first sacrificial layer is deposited over a dielectric layer, and a block mask is formed that covers an area on the first sacrificial layer. A second sacrificial layer is deposited over the block mask and the first sacrificial layer. After the block mask is formed, the second sacrificial layer is patterned to form a mandrel that is arranged in part on a portion of the block mask.

## Claims

### Claim 1

A method comprising:
depositing a first sacrificial layer over a dielectric layer;
forming a first block mask that covers an area on the first sacrificial layer;
depositing a second sacrificial layer over the first block mask and the first sacrificial layer; and
after the first block mask is formed, patterning the second sacrificial layer to form a first mandrel that is arranged in part on a first portion of the first block mask,
wherein the first sacrificial layer is deposited on a third sacrificial layer arranged between the first sacrificial layer and the dielectric layer, and further comprising:
before depositing the first sacrificial layer, forming a second block mask covering an area on the third sacrificial layer.

### Claim 2 (depends on 1)

The method of claim 1 wherein the second sacrificial layer is patterned by an etching process that removes the first sacrificial layer selective to the first block mask.

### Claim 3 (depends on 2)

The method of claim 2 wherein an etch stop layer is formed on the first sacrificial layer before the first block mask is formed, and the etching process used to pattern the second sacrificial layer removes the first sacrificial layer selective to the etch stop layer.

### Claim 4 (depends on 3)

The method of claim 3 wherein the first sacrificial layer and the second sacrificial layer are composed of amorphous silicon, the first block mask is composed of aluminum oxide, and the etch stop layer is composed of silicon dioxide.

### Claim 5 (depends on 1)

The method of claim 1 wherein patterning the second sacrificial layer to form the first mandrel comprises:
etching the second sacrificial layer selective to the first block mask.

### Claim 6 (depends on 5)

The method of claim 5 further comprising:
after the second sacrificial layer is etched, forming a sidewall spacer on a second portion of the first block mask adjacent to the first portion of the first block mask and the first mandrel.

### Claim 7 (depends on 5)

The method of claim 5 wherein an etch stop layer is formed on the first sacrificial layer before the first block mask is formed, and the second sacrificial layer is etched selective to the etch stop layer when patterning the second sacrificial layer to form the first mandrel.

### Claim 8 (depends on 1)

The method of claim 1 wherein a second mandrel is formed when the second sacrificial layer is patterned, and further comprising:
forming a first sidewall spacer on the first mandrel and a second sidewall spacer on the second mandrel to define a non-mandrel line as a space between the first sidewall spacer and the second sidewall spacer.

### Claim 9 (depends on 8)

The method of claim 8 further comprising:
etching the second sacrificial layer with a first etching process to vertically transfer the non-mandrel line from the second sacrificial layer to the first sacrificial layer and form a non-mandrel line in the first sacrificial layer,
wherein the non-mandrel line in the first sacrificial layer is arranged on a portion of the second block mask, and the second sacrificial layer is etched selective to the second block mask, the first sidewall spacer, and the second sidewall spacer.

### Claim 10 (depends on 9)

The method of claim 9 wherein the first block mask includes a second portion exposed by the non-mandrel line, and further comprising:
before etching the second sacrificial layer, trimming the second portion of the first block mask with a second etching process.

### Claim 11 (depends on 9)

The method of claim 9 further comprising:
etching the third sacrificial layer with a second etching process to vertically transfer the non-mandrel line from the first sacrificial layer to the third sacrificial layer and form a non-mandrel line in the third sacrificial layer,
wherein the second block mask preserves an underlying section of the third sacrificial layer when the third sacrificial layer is etched by the second etching process.

### Claim 12 (depends on 11)

The method of claim 11 further comprising:
etching the dielectric layer with a third etching process to vertically transfer the non-mandrel line from the third sacrificial layer to the dielectric layer as a first trench and a second trench, and to transfer the section of the third sacrificial layer as a cut arranged between an end of the first trench and an end of the second trench.

### Claim 13 (depends on 9)

The method of claim 9 wherein the first mandrel and the second mandrel are removed selective to the first block mask to form a first mandrel line and a second mandrel line when the second sacrificial layer is etched with the first etching process, and the first portion of the first block mask is exposed when the first mandrel is removed.

### Claim 14 (depends on 13)

The method of claim 13 wherein a first etch stop layer is formed on the first sacrificial layer before the first block mask is formed, and patterning the second sacrificial layer to form the first mandrel comprises:
etching the second sacrificial layer selective to the first etch stop layer.

### Claim 15 (depends on 14)

The method of claim 14 wherein a second etch stop layer is formed on the third sacrificial layer before the second block mask is formed, and the first etching process etches the second sacrificial layer selective to the second etch stop layer when forming the non-mandrel line in the first sacrificial layer.

### Claim 16 (depends on 13)

The method of claim 13 further comprising:
etching the first sacrificial layer with a second etching process to transfer the first mandrel line and the second mandrel line to the first sacrificial layer,
wherein the first block mask preserves an underlying section of the first sacrificial layer when the first sacrificial layer is etched.

### Claim 17 (depends on 16)

The method of claim 16 further comprising:
filling the non-mandrel line in the first sacrificial layer with a hardmask before the first sacrificial layer is etched with the second etching process.

### Claim 18 (depends on 16)

The method of claim 16 further comprising:
etching the third sacrificial layer with a third etching process to vertically transfer the first mandrel line and the second mandrel line from the first sacrificial layer to the third sacrificial layer and form a first mandrel line and a second mandrel line in the third sacrificial layer,
wherein the section of the first sacrificial layer preserves an underlying section of the third sacrificial layer when the third sacrificial layer is etched by the third etching process.

### Claim 19 (depends on 18)

The method of claim 18 further comprising:
etching the dielectric layer to vertically transfer the first mandrel line from the third sacrificial layer to the dielectric layer as a first trench and a second trench, and to transfer the section of the third sacrificial layer as a cut arranged between an end of the first trench and an end of the second trench.