# US 10,319,619 B2 · Equipment for manufacturing semiconductor devices and method for use of same for manufacturing semiconductor package components > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,619 B2 - Document ID: US10319619B2 - Status: Granted - Kind: B2 - Application number: 15/528,620 - Filed: 2014-12-05 - Published: 2017-09-14 - Granted: 2019-06-11 - Earliest claimed: 2014-12-05 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd.; BongJin Son; Yose Eum; JangWoo Lee - Inventors: BongJin Son; Yose Eum; JangWoo Lee - Web page: https://patentgrep.com/patent/US10319619B2 ## CPC - H10P 72/0444: {Apparatus for wiring semiconductor or solid-state device} - H10P 72/00: Handling or holding of wafers, substrates or devices during manufacture or treatment thereof - H10P 72/04: {Apparatus for manufacture or treatment} - H10P 72/0428: {Apparatus for mechanical treatment or grinding or cutting} - H10P 72/0438: {Apparatus for making assemblies not otherwise provided for, e.g. package constructions} - H10P 72/0446: {Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates} - H10P 72/70: for supporting or gripping - H10P 72/74: {using temporarily an auxiliary support} - H10P 72/76: using mechanical means, e.g. clamps or pinches - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 90/00: Package configurations - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 72/01257: {by reflowing} - H10W 72/877: {Bump connectors and die-attach connectors} - H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body} - H10W 90/288: {characterised by arrangements for thermal management of the stacked chips} - H10W 90/722: {between stacked chips} - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Provided are an apparatus for manufacturing a semiconductor device and a method of manufacturing a semiconductor package using the same. The manufacturing apparatus may include a base with a plurality of through holes and weight blocks respectively bound by the through holes. ## Claims ### Claim 1 An apparatus for manufacturing a semiconductor device, comprising: a base with a plurality of through holes; and weight blocks bound by the through holes, respectively, the weight blocks being configured to apply pressure to a surface of the semiconductor device during a reflow process, the weight blocks being configured to be vertically movable in corresponding through holes; wherein each of the weight blocks comprises: a lower part configured to be vertically movable in a corresponding one of the through holes; and an upper part extending from the lower part; wherein the lower part has a vertical length that is greater than a length of the corresponding one of the through holes. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein the lower part of each of the weight blocks comprises a detent formed on a side surface thereof, and the base comprises lateral protrusions, each of which protrudes toward a center of a corresponding one of the through holes, wherein the weight blocks are engaged with the through holes, respectively, by the detents and the lateral protrusions. ### Claim 3 (depends on 1) The apparatus of claim 1, wherein the lower part of each of the weight blocks comprises a recessed region formed on a side surface thereof to have a bottom-open and top-closed structure. ### Claim 4 (depends on 3) The apparatus of claim 3, wherein the recessed region has a thickness that is smaller than a thickness of the lower part of each of the weight blocks. ### Claim 5 (depends on 1) The apparatus of claim 1, further comprising a plate with holes, in which the upper parts of the weight blocks are disposed. ### Claim 6 (depends on 1) The apparatus of claim 1, wherein each of the weight blocks has a bottom surface to be in direct contact with the surface of the semiconductor device, and the bottom surface of each of the weight blocks is configured to have a protrusion at a center region thereof. ### Claim 7 (depends on 1) The apparatus of claim 1, wherein each of the weight blocks has a bottom surface to be in direct contact with a pressure-applying surface, and the bottom surface of each of the weight blocks is configured to have a protrusion at an edge region thereof. ### Claim 8 (depends on 1) The apparatus of claim 1, wherein the base comprises a material having a deformation-free property under a thermal process to be performed at a temperature of about 300° C. ### Claim 9 A method of manufacturing a semiconductor package, comprising: preparing first packages, each of which comprises first connection patterns; disposing second packages on the first packages, respectively, each of the second packages comprising second connection patterns at positions corresponding to the first connection patterns; disposing a base with weight blocks, on the second packages wherein each of the weight blocks comprises a lower part configured to be vertically movable in a corresponding one of the through holes, and an upper part extending from the lower part wherein the lower part has a vertical length that is greater than a length of the corresponding one of the through holes, and a bottom surface of each of the weight blocks having a protrusion; applying a pressure to all of the second packages using the weight blocks; and performing a reflow process on the first and second connection patterns to form a connection structure electrically connecting the first and second packages to each other. ### Claim 10 (depends on 9) The method of claim 9, wherein the applying of the pressure to the second packages is performed in such a way that a weight of each of the weight blocks is exerted on a central region of a corresponding one of the second packages. ### Claim 11 (depends on 9) The method of claim 9, wherein the applying of the pressure to the second packages is performed in such a way that a weight of each of the weight blocks is exerted on edge regions of an adjacent pair of the second packages. ### Claim 12 (depends on 9) The method of claim 9, further comprising forming a heat-dissipating part between the first and second packages.