# US 10,319,605 B2 · Semiconductor treatment composition and treatment method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,605 B2 - Document ID: US10319605B2 - Status: Granted - Kind: B2 - Application number: 15/584,168 - Filed: 2017-05-02 - Published: 2017-11-16 - Granted: 2019-06-11 - Earliest claimed: 2016-05-10 - Assignees: Jsr Corporation - Applicants: JSR Corporation - Inventors: Yasutaka Kamei; Takahiro Hayama; Naoki Nishiguchi; Satoshi Kamo; Tomotaka Shinoda - Web page: https://patentgrep.com/patent/US10319605B2 ## CPC - H10P 52/403: {of conductive or resistive materials} - B24B 1/00: Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes - B24B 37/044: {characterised by the composition of the lapping agent} - C09G 1/00: Polishing compositions (French polish C09F11/00; detergents C11D) - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - C09G 1/04: Aqueous dispersions (C09G1/02 takes precedence) - C09G 1/06: Other polishing compositions - C09K 3/1454: {Abrasive powders, suspensions and pastes for polishing} - C09K 3/1463: {Aqueous liquid suspensions} - C09K 13/06: with organic material - C11D 3/14: Fillers; Abrasives {; Abrasive compositions; Suspending or absorbing agents not provided for in one single group of C11D3/12; Specific features concerning abrasives, e.g. granulometry or mixtures (dyes, pigments C11D3/40)} - C11D 7/20: Water-insoluble oxides - H10P 52/402: {of semiconductor materials} - H10P 70/277: {the processing being a planarisation of conductive layers} - C11D 2111/22: Electronic devices, e.g. PCBs or semiconductors - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - C11D: DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL ## Abstract A semiconductor treatment composition includes particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×101 to 1.5×103 per mL. ## Claims ### Claim 1 A semiconductor treatment composition comprising: particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×101 to 1.5×103 per mL, wherein the particles include at least one particles selected from a group consisting of metal particles and metal oxide particles. ### Claim 2 (depends on 1) The semiconductor treatment composition according to claim 1, the semiconductor treatment composition being used in a 1 to 500-fold diluted state. ### Claim 3 (depends on 1) The semiconductor treatment composition according to claim 1, further comprising an organic acid. ### Claim 4 (depends on 1) The semiconductor treatment composition according to claim 1, further comprising a water-soluble polymer. ### Claim 5 (depends on 4) The semiconductor treatment composition according to claim 4, wherein the weight average molecular weight (Mw) of the water-soluble polymer is from 1,000 to 1,500,000. ### Claim 6 (depends on 1) The semiconductor treatment composition according to claim 1, further comprising an amine. ### Claim 7 (depends on 1) The semiconductor treatment composition according to claim 1, wherein said particles comprise 30 parts by mass or more, based on 100 parts by mass of the total mass of said particles, which have a ratio (Rmax/Rmin) of the major axis (Rmax) to the minor axis (Rmin) of 1.3 or more. ### Claim 8 (depends on 1) The semiconductor treatment composition according to claim 1, wherein said particles comprise 30 parts by mass or more, based on 100 parts by mass of the total mass of said particles, which have a ratio (Rmax/Rmin) of the major axis (Rmax) to the minor axis (Rmin) of 1.4 to 3.0. ### Claim 9 (depends on 1) A treatment method comprising: treating a wiring board by using the semiconductor treatment composition according to claim 1, the wiring board containing a wiring material and a barrier metal material, the wiring material being copper or tungsten, and the barrier metal material being at least one material selected from a group consisting of tantalum, titanium, cobalt, ruthenium, manganese, and compounds thereof. ### Claim 10 (depends on 1) A treatment method comprising: treating a wiring board that contains tungsten as a wiring material by using the semiconductor treatment composition according to claim 1, after subjecting the wiring board to chemical mechanical polishing by using a composition that contains iron ions and peroxides. ### Claim 11 A semiconductor treatment composition comprising: particles having a particle size of 0.1 to 0.3 micrometers in a number of 3×101 to 1.5×103 per mL, wherein the particles include silica particles. ### Claim 12 (depends on 11) The semiconductor treatment composition according to claim 11, the semiconductor treatment composition being used in a 1 to 500-fold diluted state. ### Claim 13 (depends on 11) The semiconductor treatment composition according to claim 11, further comprising an organic acid. ### Claim 14 (depends on 11) The semiconductor treatment composition according to claim 11, further comprising a water-soluble polymer. ### Claim 15 (depends on 14) The semiconductor treatment composition according to claim 14, wherein the weight average molecular weight (Mw) of the water-soluble polymer is from 1,000 to 1,500,000. ### Claim 16 (depends on 11) The semiconductor treatment composition according to claim 11, further comprising an amine. ### Claim 17 (depends on 11) The semiconductor treatment composition according to claim 11, wherein said particles comprise 30 parts by mass or more, based on 100 parts by mass of the total mass of said particles, which have a ratio (Rmax/Rmin) of the major axis (Rmax) to the minor axis (Rmin) of 1.3 or more. ### Claim 18 (depends on 11) The semiconductor treatment composition according to claim 11, wherein said particles comprise 30 parts by mass or more, based on 100 parts by mass of the total mass of said particles, which have a ratio (Rmax/Rmin) of the major axis (Rmax) to the minor axis (Rmin) of 1.4 to 3.0. ### Claim 19 (depends on 11) A treatment method comprising: treating a wiring board by using the semiconductor treatment composition according to claim 11, the wiring board containing a wiring material and a barrier metal material, the wiring material being copper or tungsten, and the barrier metal material being at least one material selected from a group consisting of tantalum, titanium, cobalt, ruthenium, manganese, and compounds thereof. ### Claim 20 (depends on 11) A treatment method comprising: treating a wiring board that contains tungsten as a wiring material by using the semiconductor treatment composition according to claim 11, after subjecting the wiring board to chemical mechanical polishing by using a composition that contains iron ions and peroxides.