# US 10,319,601 B2 · Slurry for polishing of integrated circuit packaging

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,319,601 B2
- Document ID: US10319601B2
- Status: Granted
- Kind: B2
- Application number: 15/467,866
- Filed: 2017-03-23
- Published: 2018-09-27
- Granted: 2019-06-11
- Earliest claimed: 2017-03-23
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Ranga Rao Arnepalli; Prerna Goradia; Prayudi Lianto; Jie Zeng; Arvind Sundarrajan; Robert Jan Visser; Guan Huei See
- Web page: https://patentgrep.com/patent/US10319601B2

## CPC

- H10P 95/08: {Planarisation of organic insulating materials}
- B24B 1/00: Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B 37/044: {characterised by the composition of the lapping agent}
- C09G 1/00: Polishing compositions (French polish C09F11/00; detergents C11D)
- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- C09G 1/04: Aqueous dispersions (C09G1/02 takes precedence)
- C09G 1/06: Other polishing compositions
- C09K 3/1409: {Abrasive particles per se (preparation of diamond C01B32/25)}
- C09K 3/1436: {Composite particles, e.g. coated particles}
- C09K 3/1454: {Abrasive powders, suspensions and pastes for polishing}
- C09K 3/1463: {Aqueous liquid suspensions}
- C09K 13/06: with organic material
- H10P 52/402: {of semiconductor materials}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

## Abstract

A slurry for chemical mechanical planarization includes water, 1-3 wt. % of abrasive particles having an average diameter of at least 10 nm and less than 100 nm and an outer surface of ceria, and ½-3 wt. % of at least one amine.

## Claims

### Claim 1

A method of fabricating packaging for an integrated circuit chip, comprising:
bringing an outer polymer layer of a workpiece into contact with a polishing pad, wherein the outer polymer layer is polybenzobisoxazole (PBO);
supply a slurry to an interface between the workpiece and the polishing pad, wherein the slurry comprises water, 1-3 wt. % of abrasive particles having an average diameter of at least 20 nm and less than 100 nm and having an outer surface of ceria, and ½-3 wt. % of at least one amine, wherein the slurry consists of water, the abrasive particles and the at least one amine; and
generating relative motion between the workpiece and the polishing pad to polish the outer polymer layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the workpiece comprises an inner polymer layer, a patterned metal layer, and the outer polymer layer covers the inner polymer layer and the patterned metal layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the metal layer consists of copper.

### Claim 4 (depends on 2)

The method of claim 2, comprising polishing the outer polymer layer until a top surface of the workpiece is planarized.

### Claim 5 (depends on 4)

The method of claim 4, comprising polishing the outer polymer layer until an upper surface of the patterned metal layer is exposed.

### Claim 6 (depends on 4)

The method of claim 4, comprising depositing a second metal layer on the top surface and patterning the second metal layer.

### Claim 7 (depends on 6)

The method of claim 6, comprising depositing a further polymer layer over the second metal layer and planarizing the further polymer layer.

### Claim 8 (depends on 1)

The method of claim 1, comprising generating the abrasive particles by a hydrothermal synthesis process.

### Claim 9 (depends on 1)

The method of claim 1, wherein the slurry comprises 2-3 wt. % of the abrasive particles.

### Claim 10 (depends on 1)

The method of claim 1, wherein the slurry comprises 2½-3 wt. % of the abrasive particles.

### Claim 11

A method of fabricating packaging for an integrated circuit chip, comprising:
bringing an outer polymer layer of a workpiece into contact with a polishing pad, wherein the outer polymer layer is polybenzobisoxazole (PBO);
supply a slurry to an interface between the workpiece and the polishing pad, wherein the slurry comprises water, 1-3 wt. % of abrasive particles having an average diameter of at least 20 nm and less than 100 nm and having an outer surface of ceria, ½-3 wt. % of at least one amine, and 0.5-1.5 wt. %, of tetramethylammonium hydroxide (TMAH), wherein the slurry consists of the water, the abrasive particles, the at least one amine, and the TMAH; and
generating relative motion between the workpiece and the polishing pad to polish the outer polymer layer.

### Claim 12 (depends on 11)

The method of claim 11, wherein the workpiece comprises an inner polymer layer, a patterned metal layer, and the outer polymer layer covers the inner polymer layer and the patterned metal layer.

### Claim 13 (depends on 12)

The method of claim 12, wherein the metal layer consists of copper.

### Claim 14 (depends on 11)

The method of claim 11, wherein the slurry comprises 2-3 wt. % of the abrasive particles.

### Claim 15 (depends on 11)

The method of claim 11, wherein the slurry comprises 2½-3 wt. % of the abrasive particles.