# US 10,319,598 B2 · Method and apparatus for thinning wafer

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- Number: US 10,319,598 B2
- Document ID: US10319598B2
- Status: Granted
- Kind: B2
- Application number: 14/785,372
- Filed: 2014-04-02
- Published: 2016-03-03
- Granted: 2019-06-11
- Earliest claimed: 2013-04-18
- Assignees: Hanwha Precision Machinery Co., Ltd.
- Applicants: Hanwha Techwin Co., Ltd.
- Inventors: Sung Wook Kim
- Web page: https://patentgrep.com/patent/US10319598B2

## CPC

- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- B23K 26/0738: {into a linear shape}
- B23K 26/0853: {Devices involving movement of the workpiece in at least two axial directions, e.g. in a plane}
- B23K 26/0876: {in at least two axial directions}
- B23K 26/40: taking account of the properties of the material involved
- B23K 26/402: involving non-metallic material, e.g. isolators
- B23K 26/53: for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
- B23K 26/702: {Auxiliary equipment}
- B28D 5/0011: {with preliminary treatment, e.g. weakening by scoring}
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- B23K 2101/40: Semiconductor devices
- B23K 2103/172: {wherein at least one of the layers is non-metallic}
- B23K 2103/50: {Inorganic materials other than metals or composite materials}
- B23K 2103/56: {being semiconducting}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B28D: WORKING STONE OR STONE-LIKE MATERIALS

## Abstract

A method and an apparatus for thinning a wafer are provided. The method for thinning a wafer, according to one embodiment of the present invention, comprises the steps of: irradiating a line beam focused at a specific depth of the wafer; scanning the wafer by using the line beam so as to form an interface at the specific depth of the wafer; and cleaving the wafer on which the interface is formed into a pattern wafer and a dummy wafer.

## Claims

### Claim 1

A method for thinning a wafer, comprising:
irradiating a line beam focused at a specific depth of a wafer on a surface opposite to a surface on which a circuit is disposed;
scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer; and
cleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the irradiating of the line beam includes: irradiating a laser beam; and
shaping the laser beam to generate the line beam.

### Claim 3

A method for thinning a wafer, comprising:
irradiating a line beam focused at a specific depth of a wafer;
scanning the wafer by using the line beam and forming an interface at the specific depth of the wafer; and
cleaving the wafer in which the interface is formed into a pattern wafer and a dummy wafer,
wherein the forming of the interface includes:
adjusting at least one of a scan rate of the line beam or an intensity of the line beam; and
forming grid pattern lines at the specific depth of the wafer.

### Claim 4 (depends on 1)

The method of claim 1, further comprising: forming a circuit pattern on the dummy wafer and recycling the dummy wafer.