# US 10,319,566 B2 · Apparatus for supplying power and apparatus for treating substrate including the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,566 B2 - Document ID: US10319566B2 - Status: Granted - Kind: B2 - Application number: 15/962,487 - Filed: 2018-04-25 - Published: 2018-11-01 - Granted: 2019-06-11 - Earliest claimed: 2017-04-26 - Assignees: Semes Co., Ltd. - Applicants: Semes Co., Ltd. - Inventors: Harutyun Melikyan; Ogsen Galstyan; Junghwan Lee; Jong Hwan An; Shin-Woo Nam - Web page: https://patentgrep.com/patent/US10319566B2 ## CPC - H01J 37/32174: {Circuits specially adapted for controlling the RF discharge} - H01J 37/321: {the radio frequency energy being inductively coupled to the plasma} - H03H 7/40: Automatic matching of load impedance to source impedance - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) ## Abstract Disclosed inventions are apparatus for supplying power and an apparatus for treating a substrate including the same. The apparatus for supplying power includes a high-frequency power source that provides a high-frequency power; a plasma source including first and second antennas that generates plasma by using the high-frequency power; and a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas. The power divider includes a first variable device that controls the high-frequency power supplied to the first and second antennas; and a second variable device that compensates for non-linearity of the high-frequency power supplied to the first and second antennas. ## Claims ### Claim 1 An apparatus for supplying power, the apparatus comprising: a high-frequency power source configured to provide a high-frequency power; a plasma source including first and second antennas, the plasma source configured to generate plasma by using the high-frequency power; a power divider connected between the high-frequency power source and the plasma source, the power divider configured to divide the high-frequency power supplied to the first and second antennas; and an impedance matching circuit connected between the high-frequency power source and the power divider, the impedance matching circuit configured to perform impedance matching, wherein the power divider includes, a first variable device configured to control the high-frequency power supplied to the first and second antennas, and a second variable device configured to compensate for non-linearity of the high-frequency power supplied to the first and second antennas, wherein the power divider further includes a pair of reactance devices between the first and second variable devices, and wherein the pair of reactance devices are provided to be symmetrical to each other with respect to the impedance matching circuit. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein the first and second variable devices is variable capacitors. ### Claim 3 (depends on 1) The apparatus of claim 1, wherein the first and second variable devices of the power divider are provided between the impedance matching unit and the plasma source in a symmetrical structure. ### Claim 4 An apparatus for treating a substrate, the apparatus comprising: a chamber having a space for processing the substrate therein; a substrate support assembly in the chamber, the substrate support assembly configured to support the substrate; a gas supply unit configured to supply a gas into the chamber; and a power supply configured to supply a high-frequency power such that the gas in the chamber is excited into a plasma state, the power supply including, a high-frequency power source configured to provide the high-frequency power, a plasma source including first and second antennas, the plasma source configured to generate plasma by using the high-frequency power, a power divider connected between the high-frequency power source and the plasma source, the power divider configured to divide the high-frequency power supplied to the first and second antennas, and an impedance matching circuit connected between the high-frequency power source and the power divider, the impedance matching circuit configured to perform impedance matching, wherein the power divider includes, a first variable device configured to control the high-frequency power supplied to the first and second antennas, and a second variable device configured to compensate for non-linearity of the high-frequency power supplied to the first and second antennas, wherein the power divider further includes a pair of reactance devices between the first and second variable devices, and wherein the pair of reactance devices are provided to be symmetrical to each other with respect to the impedance matching circuit. ### Claim 5 (depends on 4) The apparatus of claim 4, wherein the first and second variable devices is variable capacitors. ### Claim 6 (depends on 4) The apparatus of claim 4, wherein the first and second variable devices of the power divider are provided between the impedance matching unit and the plasma source in a symmetrical structure. ### Claim 7 An apparatus for supplying power, the apparatus comprising: a high-frequency power source configured to provide a high-frequency power; a plasma source including first and second antennas configured to generate plasma by using the high-frequency power; a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas; and an impedance matching circuit between the high-frequency power source and the power divider, the impedance matching circuit configured to perform impedance matching, wherein the power divider includes a first variable device and a second variable device between the impedance matching circuit and the plasma source in an asymmetrical structure, and wherein the power divider further includes at least one reactance device and an entirety of the at least one reactance device is between the first and second variable devices. ### Claim 8 (depends on 7) The apparatus of claim 7, wherein the first variable device is connected to the impedance matching circuit and to the first antenna, and the second variable device is connected to the second antenna and is not connected to the impedance matching circuit. ### Claim 9 (depends on 7) The apparatus of claim 7, wherein the impedance matching circuit the first variable device and the second variable device are connected to each other at a node, the first and second variable device are at opposite sides with respect to the node, and the at least one reactance device are between the node and one of the first variable device or the second variable device. ### Claim 10 An apparatus for treating a substrate, the apparatus comprising: a chamber having a space for processing the substrate therein; a substrate support assembly in the chamber, the substrate support assembly configured to support the substrate; a gas supply unit configured to supply a gas into the chamber; and a power supply configured to supply a high-frequency power such that the gas in the chamber is excited into a plasma state, the power supply including, a high-frequency power source configured to provide the high-frequency power, a plasma source including first and second antennas configured to generate plasma by using the high-frequency power, a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas, and an impedance matching circuit between the high-frequency power source and the power divider, the impedance matching circuit configured to perform impedance matching, wherein the power divider includes a first variable device and a second variable device between the impedance matching circuit and the plasma source in an asymmetrical structure, and wherein the power divider further includes at least one reactance device and an entirety of the at least one reactance device is between the first and second variable devices. ### Claim 11 (depends on 10) The apparatus of claim 10, wherein the first variable device is connected to the impedance matching circuit and to the first antenna, and the second variable device is connected to the second antenna and is not connected to the impedance matching circuit. ### Claim 12 (depends on 10) The apparatus of claim 10, wherein the impedance matching circuit the first variable device and the second variable device are connected to each other at a node, the first and second variable device are at opposite sides with respect to the node, and the at least one reactance device are between the node and one of the first variable device or the second variable device.