# US 10,319,563 B2 · Electronic beam machining system

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- Number: US 10,319,563 B2
- Document ID: US10319563B2
- Status: Granted
- Kind: B2
- Application number: 16/220,340
- Filed: 2018-12-14
- Published: 2019-05-09
- Granted: 2019-06-11
- Earliest claimed: 2016-06-08
- Assignees: Tsinghua University; Hon Hai Precision Industry Co., Ltd.
- Applicants: Tsinghua University; Hon Hai Precision Industry Co., Ltd.
- Inventors: Peng Liu; Wei Zhao; Xiao-Yang Lin; Duan-Liang Zhou; Chun-Hai Zhang; Kai-Li Jiang; Shou-Shan Fan
- Web page: https://patentgrep.com/patent/US10319563B2

## CPC

- H01J 37/3002: {Details}
- C01B 32/182: Graphene
- C01G 39/06: Sulfides
- H01J 37/06: Electron sources; Electron guns
- H01J 37/302: Controlling tubes by external information, e.g. program control (H01J37/304 takes precedence)
- H01J 37/305: for casting, melting, evaporating, or etching
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 35/00: Methods or apparatus for measurement or analysis of nanostructures
- C01P 2004/24: Nanoplates, i.e. plate-like particles with a thickness from 1-100 nanometer
- H01J 37/3056: {for microworking, e. g. etching of gratings or trimming of electrical components}
- H01J 37/31: for cutting or drilling
- H01J 37/315: for welding
- H01J 37/3174: {Particle-beam lithography, e.g. electron beam lithography}
- H01J 2237/083: Beam forming
- H01J 2237/30472: Controlling the beam
- Y10S 977/734: Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S 977/755: Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
- Y10S 977/932: for electronic or optoelectronic application
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

The disclosure relates to an electronic beam machining system. The system includes a vacuum chamber; an electron gun located in the vacuum chamber and used to emit electron beam; a holder located in the vacuum chamber and used to fix an object; a control computer; and a diffraction unit located in the vacuum chamber; the diffraction unit includes a two-dimensional nanomaterial; the electron beam transmits the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams; the transmission electron beam and the plurality of diffraction electron beams radiate the object to form a transmission spot and a plurality of diffraction spots.

## Claims

### Claim 1

An electronic beam machining system, comprising:
a vacuum chamber;
an electron gun located in the vacuum chamber and configured to emit an incident electron beam;
a holder located in the vacuum chamber, spaced from the electron gun, and
configured to secure an object;
a diffraction unit located between the electron gun and the holder, wherein the diffraction unit comprises a two-dimensional nanomaterial comprising a single layer of atoms, the incident electron beam is configured to transmit the two-dimensional nanomaterial to form a transmission electron beam and a plurality of diffraction electron beams, and the transmission electron beam and the plurality of diffraction electron beams radiate the object to form a transmission spot and a plurality of diffraction spots; and
a control computer configured to control the electronic beam machining system.

### Claim 2 (depends on 1)

The electronic beam machining system of claim 1, wherein the two-dimensional nanomaterial is a graphene sheet.

### Claim 3 (depends on 1)

The electronic beam machining system of claim 1, wherein the two-dimensional nanomaterial is a MoS2 sheet.

### Claim 4 (depends on 1)

The electronic beam machining system of claim 1, wherein the diffraction unit further comprises a grid, and the two-dimensional nanomaterial and the grid are stacked with each other.

### Claim 5 (depends on 4)

The electronic beam machining system of claim 4, wherein the grid is a copper mesh.

### Claim 6 (depends on 4)

The electronic beam machining system of claim 4, wherein the grid is a carbon nanotube structure.

### Claim 7 (depends on 6)

The electronic beam machining system of claim 6, wherein the carbon nanotube structure comprises two drawn carbon nanotube films stacked with each other.

### Claim 8 (depends on 7)

The electronic beam machining system of claim 7, wherein aligned directions of carbon nanotubes between the two drawn carbon nanotube films is about 90 degrees.

### Claim 9 (depends on 4)

The electronic beam machining system of claim 4, wherein the diffraction unit further comprises a metal sheet having a central through hole, and the grid is located on the metal sheet and covers the central through hole.

### Claim 10 (depends on 1)

The electronic beam machining system of claim 1, further comprising a conductor shield configured to shield at lease one of the transmission spot and the plurality of diffraction spots.

### Claim 11 (depends on 10)

The electronic beam machining system of claim 10, wherein the conductor shield comprises a first conductive rod having a first end fixed on an inner wall of the vacuum chamber and a second end opposite to the first end, and a first conductive plate fixed on the second end.

### Claim 12 (depends on 11)

The electronic beam machining system of claim 11, wherein the conductor shield further comprises a plurality of second conductive rods connected to the first conductive plate and a plurality of second conductive plates respectively connected to the plurality of second conductive rods.

### Claim 13 (depends on 12)

The electronic beam machining system of claim 12, wherein the plurality of second conductive rods are rotatable around the first conductive plate.

### Claim 14 (depends on 10)

The electronic beam machining system of claim 10, wherein the conductor shield is connected to an external circuit.

### Claim 15 (depends on 14)

The electronic beam machining system of claim 14, wherein both the conductor shield and the two-dimensional nanomaterial are connected to the external circuit.

### Claim 16 (depends on 1)

The electronic beam machining system of claim 1, wherein the diffraction unit is connected to a power supply adapted to accelerate the incident electron beam.

### Claim 17 (depends on 1)

The electronic beam machining system of claim 1, further comprising a plurality of focus electrodes located between the diffraction unit and the holder, and each of the plurality of focus electrodes is located corresponding to one of the plurality of diffraction electron beams.

### Claim 18 (depends on 1)

The electronic beam machining system of claim 1, wherein the control computer is configured to control the electronic beam machining system according to a first formula d sin θ≅dθ=λ and a second formula sin θ=R/(D2+R2)1/2, where d represents a lattice period of the two-dimensional nanomaterial, λ represents a wavelength of the incident electron beam, θ represents an angle between the transmission electron beam and the plurality of diffraction electron beams, D represents a distance between the two-dimensional nanomaterial and the object, and R represents a radius of a diffraction ring formed by the plurality of diffraction spots.