# US 10,319,535 B2 · High voltage high power energy storage devices, systems, and associated methods

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- Number: US 10,319,535 B2
- Document ID: US10319535B2
- Status: Granted
- Kind: B2
- Application number: 14/039,617
- Filed: 2013-09-27
- Published: 2015-04-02
- Granted: 2019-06-11
- Earliest claimed: 2013-09-27
- Assignees: Intel Corporation
- Applicants: Intel Corporation
- Inventors: Chen Zhaohui
- Web page: https://patentgrep.com/patent/US10319535B2

## CPC

- H01G 11/04: Hybrid capacitors
- H01G 11/28: arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
- H01G 11/46: Metal oxides
- H01G 11/70: characterised by their structure
- H01G 11/68: characterised by their material
- Y02E 60/13: Energy storage using capacitors
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A high power density energy storage device having enhanced operation voltage is provided. Such a device can include a cathode having a structured surface on a conductive substrate, an anode positioned adjacent to the cathode, where the anode includes a silicon substrate having a structured surface, and wherein the structured surface of the cathode is oriented toward the structured surface of the anode. The device can further include a dielectric material applied to the structured surface of the anode, a conductive material or a pseudocapacitive material applied to the structured surface of the cathode, and an electrolyte disposed between the cathode and the anode.

## Claims

### Claim 1

An energy storage device, comprising:
a cathode having a structured surface on a conductive substrate;
an anode adjacent to the cathode, the structured surface of the cathode oriented toward a surface of the anode;
a dielectric material on the surface of the anode;
a pseudocapacitive material coating selected from the group consisting of RuO2, MnO2, V2O5, NiOx, CoOx and combinations thereof overlying the structured surface of the cathode;
an intermediate layer between the structured surface of the cathode and the conductive material coating or pseudocapacitive coating; and
an electrolyte disposed between the cathode and the anode.

### Claim 2 (depends on 1)

The device of claim 1, wherein the anode has a structured surface.

### Claim 3 (depends on 1)

The device of claim 1, wherein the anode comprises a silicon material.

### Claim 4 (depends on 1)

The device of claim 1, further comprising a separator disposed between the cathode and the anode.

### Claim 5 (depends on 1)

The device of claim 1, wherein the structured surface of the cathode has surface features of from about 10 nm to about 100 microns in size.

### Claim 6 (depends on 5)

The device of claim 5, wherein the surface features include a member selected from the group consisting of pillars, tubes, trenches, cones, pyramids, pores, sponges, and combinations thereof.

### Claim 7 (depends on 2)

The device of claim 2, wherein the structured surface of the anode has vertically oriented pillars of from about 10 nm to about 100 microns in size.

### Claim 8 (depends on 1)

The device of claim 1, wherein the anode includes a conductive silicon substrate, the conductive silicon substrate including a material selected from the group consisting of single crystal silicon, polycrystalline silicon, amorphous silicon, porous silicon, and combinations thereof.

### Claim 9 (depends on 1)

The device of claim 1, wherein the anode includes a conductive porous silicon substrate.

### Claim 10 (depends on 1)

The device of claim 1, wherein the dielectric material is a particulate material.

### Claim 11 (depends on 1)

The device of claim 1, wherein the dielectric material is a high-breakdown high-K oxide film.

### Claim 12 (depends on 1)

The device of claim 1, wherein the dielectric material includes a member selected from the group consisting of SiO2, Ta2O5, Nb2O5, Al2O3, TiO2, HfO2, HfSiOx, HfAlOx, VOx, SrTiO3, (Ba, Sr)TiO3, LiNbO3, Bi2Ti2O3, and combinations thereof.

### Claim 13 (depends on 1)

The device of claim 1, wherein the conductive material coating overlies the structured surface of the cathode, and wherein the conductive material is selected from the group consisting of TiNx, TixAlyNz, VNx, NbNx, MoNx, TiCx, ZrCx, HfCx, VCx, NbCx, TaCx, WCx, TiSix, NiSix, CoSix, Mo, W, Pt, Ru, Ni, Co, Cu, Pd, Au, and combinations thereof.

### Claim 14 (depends on 1)

The device of claim 1, wherein the cathode includes a material selected from the group consisting of a conductive polymer, a metal foam, a carbon-based material, conductive silicon, conductive silicon carbide, and combinations thereof.

### Claim 15 (depends on 1)

The device of claim 1, wherein the electrolyte is either an aqueous electrolyte, an organic electrolyte, or an ionic liquid electrolyte.

### Claim 16 (depends on 1)

An electronic system, comprising:
a semiconductor substrate;
at least one electronic circuit element; and
at least one energy storage device as recited in claim 1, wherein the at least one energy storage device and the at least one electronic circuit element are monolithically integrated on the semiconductor substrate.

### Claim 17 (depends on 16)

The system of claim 16, wherein the electronic circuit elements include a processing unit.

### Claim 18 (depends on 16)

The system of claim 16, wherein the electronic circuit elements include a control unit.

### Claim 19 (depends on 1)

The device of claim 1, wherein the intermediate layer consists of Cr, Ti, Au, Pt, or an oxide thereof.

### Claim 20

An energy storage device, comprising:
a cathode having a structured surface on a conductive substrate;
an anode adjacent to the cathode, the structured surface of the cathode oriented toward a surface of the anode;
a dielectric material on the surface of the anode;
a conductive material coating having an average thickness from about 0.5 nm to about 25 nm, or a pseudocapacitive material coating overlying the structured surface of the cathode;
an intermediate layer between the structured surface of the cathode and the conductive material coating or pseudocapacitive coating; and
an electrolyte disposed between the cathode and the anode.

### Claim 21 (depends on 20)

The device of claim 20, wherein the anode has a structured surface.

### Claim 22 (depends on 20)

The device of claim 20, further comprising a separator disposed between the cathode and the anode.

### Claim 23 (depends on 20)

The device of claim 20, wherein the structured surface of the cathode has surface features of from about 10 nm to about 100 microns in size.

### Claim 24 (depends on 23)

The device of claim 23, wherein the surface features include a member selected from the group consisting of pillars, tubes, trenches, cones, pyramids, pores, sponges, and combinations thereof.

### Claim 25 (depends on 21)

The device of claim 21, wherein the structured surface of the anode has vertically oriented pillars of from about 10 nm to about 100 microns in size.

### Claim 26 (depends on 20)

The device of claim 20, wherein the anode includes a conductive silicon substrate, the conductive silicon substrate including a material selected from the group consisting of single crystal silicon, polycrystalline silicon, amorphous silicon, porous silicon, and combinations thereof.

### Claim 27 (depends on 20)

The device of claim 20, wherein the anode includes a conductive porous silicon substrate.

### Claim 28 (depends on 20)

The device of claim 20, wherein the dielectric material includes a member selected from the group consisting of SiO2, Ta2O5, Nb2O5, Al2O3, TiO2, HfO2, HfSiOx, HfAlOx, VOx, SrTiO3, (Ba, Sr)TiO3, LiNbO3, Bi2Ti2O3, and combinations thereof.

### Claim 29 (depends on 20)

The device of claim 20, wherein the conductive material coating overlies the structured surface of the cathode, and wherein the conductive material is selected from the group consisting of TiNx, TixAlyNz, VNx, NbNx, MoNx, TiCx, ZrCx, HfCx, VCx, NbCx, TaCx, WCx, TiSix, NiSix, CoSix, Mo, W, Pt, Ru, Ni, Co, Cu, Pd, Au, and combinations thereof.