# US 10,319,529 B2 · One-sided capacitor foils and methods of making one-sided capacitor foils

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- Number: US 10,319,529 B2
- Document ID: US10319529B2
- Status: Granted
- Kind: B2
- Application number: 14/180,946
- Filed: 2014-02-14
- Published: 2014-08-14
- Granted: 2019-06-11
- Earliest claimed: 2013-02-14
- Assignees: Kemet Electronics Corporation
- Applicants: Kemet Electronics Corporation
- Inventors: Yanming Liu; Jessica P. Love; Brandon Summey
- Web page: https://patentgrep.com/patent/US10319529B2

## CPC

- H01G 4/38: Multiple capacitors, i.e. structural combinations of fixed capacitors
- H01G 4/005: Electrodes
- H01G 4/008: Selection of materials
- H01G 9/0029: {Processes of manufacture}
- H01G 9/055: Etched foil electrodes
- Y10T 29/302: Clad or other composite foil or thin metal making
- Y10T 29/43: Electric condenser making
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method of forming a capacitor is described as is an improved capacitor formed with a one-sided capacitor foil. The method includes: providing a foil comprising a conductive core and a high surface area on each side of a first side and a second side of the core; removing at least a portion of the high surface area on the first side of the core; and forming a conductive layer on the dielectric.

## Claims

### Claim 1

A method of forming a capacitor comprising;
providing a foil comprising a conductive core comprising a valve metal and a high surface area layer on each side of a first side and a second side of said conductive core;
removing at least a portion of said high surface area layer on said first side of said conductive core;
forming a dielectric on only said high surface area layer on said second side;
forming a conductive cathode layer on said dielectric with an isolating material circumscribing an area of said conductive cathode layer wherein said forming of said conductive cathode is after said removing of said at least a portion of said high surface area layer; and
forming an anode termination on said first side of said conductive core.

### Claim 2 (depends on 1)

The method of forming a capacitor of claim 1 wherein said removing of said high surface area layer is selected from chemical etching and physical removal.

### Claim 3 (depends on 2)

The method of forming a capacitor of claim 2 wherein said chemical etching is etching by an alkali solution.

### Claim 4 (depends on 3)

The method of forming a capacitor of claim 3 wherein said alkali solution is a sodium hydroxide solution or a potassium hydroxide solution.

### Claim 5 (depends on 2)

The method of forming a capacitor of claim 2 wherein said physical removal is selected from the group consisting of plasma etching, laser ablation and polishing.

### Claim 6 (depends on 1)

The method of forming a capacitor of claim 1 wherein said valve metal is selected from the group consisting of aluminum, tantalum, titanium, niobium zirconium and hafnium.

### Claim 7 (depends on 6)

The method of forming a capacitor of claim 6 wherein said valve metal is selected from the group consisting of aluminum and tantalum.

### Claim 8 (depends on 1)

The method of forming a capacitor of claim 1 wherein after said removing said first side has no more than 15 angstroms of oxide.

### Claim 9 (depends on 1)

The method of forming a capacitor of claim 1 wherein after said removing said first side has a roughness of no more than 0.01 m2/g.

### Claim 10 (depends on 1)

The method of forming a capacitor of claim 1 wherein said second side has at least 25 angstroms of oxide.

### Claim 11 (depends on 1)

The method of forming a capacitor of claim 1 wherein said second side has a roughness of at least 0.1 m2/g.

### Claim 12 (depends on 1)

The method of forming a capacitor of claim 1 further comprising forming a cathode termination in electrical contact with said conductive layer.

### Claim 13 (depends on 1)

The method of forming a capacitor of claim 1 further comprising forming an anode termination in electrical contact with said conductive core.

### Claim 14 (depends on 1)

The method of forming a capacitor of claim 1 wherein said conductive layer comprises at least one conductor selected from the group consisting of manganese dioxide and a conductive polymer.

### Claim 15 (depends on 14)

The method of forming a capacitor of claim 14 wherein said conductive polymer comprises 3,4-ethylenedioxythiophene.