# US 10,319,448 B2 · Circuits and methods of reference-current generation for flash > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,319,448 B2 - Document ID: US10319448B2 - Status: Granted - Kind: B2 - Application number: 15/609,414 - Filed: 2017-05-31 - Published: 2018-05-17 - Granted: 2019-06-11 - Earliest claimed: 2016-11-15 - Assignees: Shanghai Huahong Grace Semiconductor Manufacturing Corporation - Applicants: Shanghai Huahong Grace Semiconductor Manufacturing Corporation - Inventors: Guangjun Yang - Web page: https://patentgrep.com/patent/US10319448B2 ## CPC - G11C 16/28: using differential sensing or reference cells, e.g. dummy cells - G11C 16/0483: {comprising cells having several storage transistors connected in series} - G11C 16/08: Address circuits; Decoders; Word-line control circuits - G11C 16/16: for erasing blocks, e.g. arrays, words, groups - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A reference-current generation method for flash includes first and second memory arrays separated by a word-line switching circuit. A reference-current generation circuit includes rows of reference cells, the first row parallel with the other rows of the first memory array and having the same number of columns as the other rows thereof, and the second row parallel with the other rows of the second memory array and having the same number of columns as the other rows thereof. The first reference word line of the first row is disconnected with the second reference word line of the second row. After programming, the first row enables the first memory array to create the first reference current used while performing read operation for the second memory array, and the second row enables the second memory array to create the second reference current used while performing read operation for the first memory array. ## Claims ### Claim 1 A reference-current generation circuit for flash, wherein the flash comprises at least two flash arrays, namely, a first memory array and a second memory array, consisting of memory cells arranged into rows and columns and having the same number of rows thereof; the reference-current generation circuit comprising a first row of reference cells and a second row of reference cells, and the first row of reference cells and the second row of reference cells are arranged by reference cells, with the first row of reference cells parallel with the other rows of the first memory array and having the same number of columns as the other rows thereof, and with a second row of reference cells parallel with the other rows of the second memory array and having the same number of columns as the other rows thereof; a word-line switching circuit is arranged between the first memory array and the second memory array and is extended between the first row of reference cells and the second row of reference cells, and under a Read operation mode of the flash, the word-line switching circuit causes the word lines of various rows of the first memory array to be disconnected with the word lines of various rows of the second memory array, and causes a first reference word line of the first row of reference cells to be disconnected with a second reference word line of the second row of reference cells; the first row of reference cells after programming enables various bit lines of the first memory array to form a first reference current, and the second row of reference cells after programming enables various bit lines of the second memory array to form a second reference current; and the first reference current is to be used as the reference current while performing a Read operation for the second memory array, and the second reference current is to be used as the reference current while performing a Read operation for the first memory array. ### Claim 2 (depends on 1) The reference-current generation circuit for the flash of claim 1, wherein the first memory array has a same number of columns with the second memory array. ### Claim 3 (depends on 1) The reference-current generation circuit for the flash of claim 1, wherein under a Program operation mode of the flash, the word-line switching circuit causes word lines of various rows of the first memory array to be connected with the word lines of various rows of the second memory array. ### Claim 4 (depends on 1) The reference-current generation circuit for the flash of claim 1, wherein under a Program operation mode of the flash, the word-line switching circuit causes the first reference word line of the first row of reference cells to be connected with the second reference word line of the second row of reference cells. ### Claim 5 (depends on 1) The reference-current generation circuit for the flash of claim 1, wherein under an Erase operation mode of the flash, the word-line switching circuit causes the word lines of various rows of the first memory array to be connected with the word lines of various rows of the second memory array. ### Claim 6 (depends on 1) The reference-current generation circuit for the flash of claim 1, wherein under an Erase operation mode of the flash, the word-line switching circuit causes the first reference word line of the first row of reference cells to be connected with the second reference word line of the second row of reference cells. ### Claim 7 (depends on 1) The reference-current generation circuit for the flash of claim 1, wherein the first reference current is in proportion to an average current for the memory cells of the flash and that the second reference current is in proportion to the average current for the memory cells of the flash. ### Claim 8 (depends on 7) The reference-current generation circuit for the flash of claim 7, wherein the first reference current equals to 15%, 30% or 55% of the average current for the memory cells of the flash; that the second reference current equals to 15%, 30% or 55% of the average current for the memory cells of the flash. ### Claim 9 (depends on 1) The reference-current generation circuit for the flash of claim 1, wherein the reference cells have the same structure as the memory cells. ### Claim 10 (depends on 9) The reference-current generation circuit for the flash of claim 9, wherein the memory cells are floating-gate transistors. ### Claim 11 (depends on 1) The reference-current generation circuit for the flash of claim 1, wherein the flash is a NAND flash or a NOR flash. ### Claim 12 (depends on 1) A method for generating a reference circuit by using the reference-current generation circuit for the flash of claim 1, comprising the following steps: program the reference current by programming the first row of reference cells so that the first row of reference cells after programming enables various bit lines of the first memory array to form a first reference current; to program for the second row of reference cells so that the second row of reference cells after programming enables various bit lines of the second memory array to form a second reference current; perform a Read operation for the flash by switching the word-line switching circuit, so that the word lines of various rows of the first memory array are disconnected with the word lines of various rows of the second memory array and the first reference word line of the first row of reference cells is disconnected with the second reference word line of the second row of reference cells; perform a Read operation for the memory cells of the first memory array, with the second reference current as shown taken as a read reference current; and perform a Read operation for the memory cells of the second memory array, with the first reference current as shown taken as the read reference current. ### Claim 13 (depends on 12) The reference-current generation circuit for the flash of claim 12, wherein the first reference current is in proportion to the average current for the memory cells of the flash and that the second reference current is in proportion to an average current for the memory cells of the flash. ### Claim 14 (depends on 13) The reference-current generation circuit for the flash of claim 13, wherein the first reference current equals to 15%, 30% or 55% of the average current for the memory cells of the flash; that the second reference current equals to 15%, 30% or 55% of the average current for the memory cells of the flash.