# US 10,319,426 B2 · Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods

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- Number: US 10,319,426 B2
- Document ID: US10319426B2
- Status: Granted
- Kind: B2
- Application number: 15/590,863
- Filed: 2017-05-09
- Published: 2018-11-15
- Granted: 2019-06-11
- Earliest claimed: 2017-05-09
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Albert Liao; Wayne I. Kinney; Yi Fang Lee; Manzar Siddik
- Web page: https://patentgrep.com/patent/US10319426B2

## CPC

- G11C 11/221: {using ferroelectric capacitors}
- G11C 11/2297: {Power supply circuits}
- H10B 53/30: characterised by the memory core region
- H10B 53/40: characterised by the peripheral circuit region
- H10D 1/68: Capacitors having no potential barriers
- H10D 1/682: {having dielectrics comprising perovskite structures}
- G11C 11/2273: {Reading or sensing circuits or methods}
- G11C 11/2275: {Writing or programming circuits or methods}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and another electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode. Related semiconductor structures, memory cells, semiconductor devices, electronic systems, and related methods are disclosed.

## Claims

### Claim 1

A semiconductor structure, comprising:
an electrode;
another electrode; and
a ferroelectric material between the electrode and the another electrode and comprising an oxide of at least one of hafnium and zirconium, the oxide doped with bismuth, wherein the ferroelectric material further comprises magnesium and comprises between about 0.3 part and about 10.0 parts of bismuth and magnesium for every about 100 parts of hafnium and zirconium.

### Claim 2 (depends on 1)

The semiconductor structure of claim 1, wherein the ferroelectric material comprises hafnium bismuth oxide.

### Claim 3 (depends on 1)

The semiconductor structure of claim 1, wherein the ferroelectric material comprises bismuth at between about 3.0 atomic percent and about 5.0 atomic percent of the ferroelectric material based on non-oxygen atoms of the ferroelectric material.

### Claim 4 (depends on 1)

The semiconductor structure of claim 1, wherein the ferroelectric material comprises bismuth at between about 0.3 atomic percent and about 1.0 atomic percent of the ferroelectric material based on non-oxygen atoms of the ferroelectric material.

### Claim 5 (depends on 1)

The semiconductor structure of claim 1, wherein the ferroelectric material further comprises at least one of yttrium, strontium, niobium, tantalum, lanthanum, gadolinium, vanadium, phosphorus, potassium, scandium, ruthenium, selenium, calcium, barium, aluminum, arsenic, indium, and silicon.

### Claim 6 (depends on 1)

The semiconductor structure of claim 1, wherein the ferroelectric material comprises a uniform concentration of bismuth throughout a thickness thereof.

### Claim 7 (depends on 1)

The semiconductor structure of claim 1, wherein the ferroelectric material has an orthorhombic crystal structure.

### Claim 8 (depends on 1)

The semiconductor structure of claim 1, wherein the oxide of at least one of hafnium and zirconium comprises hafnium zirconate (HfZrO4), the hafnium zirconate doped with bismuth.

### Claim 9 (depends on 1)

The semiconductor structure of claim 1, wherein the ferroelectric material comprises zirconium bismuth oxide.

### Claim 10 (depends on 1)

The semiconductor structure of claim 1, wherein an atomic percent of bismuth in the ferroelectric material exhibits a gradient.

### Claim 11 (depends on 1)

The semiconductor structure of claim 1, wherein the ferroelectric material has a thickness between about 10 Å and about 200 Å.

### Claim 12 (depends on 1)

The semiconductor structure of claim 1, wherein the ferroelectric material comprises hafnium zirconium bismuth oxide.

### Claim 13

A semiconductor device, comprising:
an array of memory cells, each memory cell of the array of memory cells comprising a capacitor coupled to a conductive material in contact with a source region or a drain region, the capacitor comprising:
a first electrode and a second electrode; and
a ferroelectric material between the first electrode and the second electrode, the ferroelectric material comprising:
hafnium oxide, zirconium oxide, or a combination thereof;
bismuth; and
magnesium,
wherein the ferroelectric material comprises between about 0.3 part and about 10.0 parts of bismuth and magnesium for every about 100 parts of hafnium and zirconium.

### Claim 14 (depends on 13)

The semiconductor device of claim 13, wherein the first electrode overlies a base material and further comprising another ferroelectric material comprising hafnium oxide, zirconium oxide, or a combination thereof over the base material, the another ferroelectric material doped with bismuth over the base material.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, further comprising a gate electrode overlying the another ferroelectric material over the base material.

### Claim 16 (depends on 14)

The semiconductor device of claim 14, wherein the another ferroelectric material comprises bismuth at between about 0.1 atomic percent and about 0.3 atomic percent of the another ferroelectric material based on non-oxygen atoms of the another ferroelectric material.

### Claim 17 (depends on 14)

The semiconductor device of claim 14, wherein the another ferroelectric material further comprises at least one of aluminum and magnesium.

### Claim 18

A method of forming a semiconductor structure, the method comprising:
forming an electrode;
forming a ferroelectric material comprising bismuth, magnesium, and at least one of hafnium oxide and zirconium oxide over the electrode, wherein the ferroelectric material comprises between about 0.3 part and about 10.0 part bismuth and magnesium for every about 100 parts of hafnium and zirconium; and
forming another electrode over the ferroelectric material.

### Claim 19 (depends on 18)

The method of claim 18, wherein forming a ferroelectric material comprises forming hafnium bismuth oxide.

### Claim 20 (depends on 18)

The method of claim 18, wherein forming a ferroelectric material comprises forming the ferroelectric material to comprise between about 1.0 atomic percent and about 3.0 atomic percent bismuth based on non-oxygen atoms of the ferroelectric material.

### Claim 21 (depends on 18)

The method of claim 18, wherein forming a ferroelectric material comprises forming the ferroelectric material to exhibit an orthorhombic crystal structure.

### Claim 22

An electronic system, comprising:
a processor;
a memory array operably coupled to the processor, the memory array comprising memory cells, each memory cell of the array of memory cells comprising a capacitor operably coupled to a conductive material in contact with a source region or a drain region, the capacitor comprising:
a first electrode;
a ferroelectric material adjacent to the first electrode and comprising:
hafnium oxide, zirconium oxide, or a combination thereof;
bismuth; and
magnesium, wherein the ferroelectric material comprises between about 0.3 part and about 10.0 parts of bismuth and magnesium for every about 100 parts of hafnium and zirconium; and
a second electrode adjacent the ferroelectric material on an opposite side thereof from the first electrode; and
a power supply in operable communication with the processor.