# US 10,318,880 B2 · Ultra low noise materials and devices for cryogenic superconductors and quantum bits > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,318,880 B2 - Document ID: US10318880B2 - Status: Granted - Kind: B2 - Application number: 14/711,718 - Filed: 2015-05-13 - Published: 2016-11-17 - Granted: 2019-06-11 - Earliest claimed: 2015-05-13 - Assignees: Lawrence Livermore National Security, LLC - Applicants: Lawrence Livermore National Security, LLC - Inventors: Sergey Pereverzev - Web page: https://patentgrep.com/patent/US10318880B2 ## CPC - C30B 29/02: Elements - C01B 13/00: Oxygen; Ozone; Oxides or hydroxides in general - C01B 19/02: Elemental selenium or tellurium - C01B 32/00: Carbon; Compounds thereof (C01B21/00, C01B23/00 take precedence; percarbonates C01B15/10; carbon black C09C1/48) - C22C 5/04: Alloys based on a platinum group metal - C22C 27/04: Alloys based on tungsten or molybdenum - C30B 1/00: Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B3/00; under a protective fluid C30B27/00) - C30B 7/00: Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B9/00; by normal or gradient freezing C30B11/00; under a protective fluid C30B27/00) - C30B 7/005: {Epitaxial layer growth} - C30B 29/00: Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape - C30B 33/04: using electric or magnetic fields or particle radiation - C30B 33/08: Etching - G01R 33/02: Measuring direction or magnitude of magnetic fields or magnetic flux (G01R33/20 takes precedence) - H10N 60/0912: {of Josephson-effect devices} - H10N 60/12: Josephson-effect devices - H10N 60/85: Superconducting active materials - C01P 2006/40: Electric properties - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - C22C: ALLOYS (treatment of alloys C21D, C22F) - G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12) - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS ## Abstract Materials, devices, methods of use and fabrication thereof are disclosed. The materials are particularly well suited for application in superconducting devices and quantum computing, due to ability to avoid undesirable effects from inherent noise and decoherence. The materials are formed from select isotopes having zero nuclear spin into a single crystal-phase film or layer of thickness depending on the desired application of the resulting device. The film/layer may be suspended or disposed on a substrate. The isotopes may be enriched from naturally-occurring sources of isotopically mixed elemental material(s). The single crystal is preferably devoid of structural defects such as grain boundaries, inclusions, impurities and lattice vacancies. Device configurations may be formed from the layer according to a predetermined pattern using lithographic and/or milling techniques. An optional protective layer may be deposited on some or all of the device to avoid formation of oxides and/or patinas on surfaces of the device. ## Claims ### Claim 1 A material, comprising: one or more isotopes exhibiting zero nuclear spin; and a Pt film, the Pt film having a thickness in a range from about 0.01 nm to about 1.0 nm; wherein the one or more isotopes are selected from a group consisting of: 12C, 14N, 15N, 46Ti, 48Ti, 50Ti, 64Zn, 66Zn, 68Zn, 70Zn, 70Ge, 72Ge, 74Ge, 76Ge, 92Mo, 94Mo, 96Mo, 98Mo, 100Mo, 102Pd, 104Pd, 106Pd, 108Pd, 110Pd, 123Te, 128Te, 180W 182W, 184W, 186W, 190Pt, 192Pt, 194Pt, 196Pt, 198Pt, 204Pb, and 206Pb; wherein the one or more isotopes are formed into a single crystal consisting essentially of a single crystalline phase; and wherein the Pt film coats a surface of the single crystal. ### Claim 2 (depends on 1) The material as recited in claim 1, wherein the single crystal is structurally configured as a layer having a thickness from about 10 nm to about 10 um. ### Claim 3 (depends on 1) The material as recited in claim 1, wherein the single crystal excludes one or more of: grain boundaries; impurities; crystalline lattice vacancies; surface defects; oxides formed on a surface of the single crystal; and patinas formed on the surface of the single crystal. ### Claim 4 (depends on 1) The material as recited in claim 1, wherein the single crystal exhibits physical characteristics of formation by epitaxy. ### Claim 5 (depends on 1) The material as recited in claim 1, wherein a surface of the single crystal excludes oxides and patinas. ### Claim 6 (depends on 1) The material as recited in claim 1, wherein each of the one or more isotopes is characterized by a spherical nucleus. ### Claim 7 (depends on 1) The material as recited in claim 1, wherein the material is mechanically self-supporting; and wherein the material is physically and spatially isolated from any substrate material. ### Claim 8 (depends on 1) The material as recited in claim 1, further comprising a substrate material coupled to the material, wherein the substrate material comprises a dielectric. ### Claim 9 (depends on 1) The material as recited in claim 1, wherein at least one of the one or more isotopes is present in the form of an alloy. ### Claim 10 (depends on 9) The material as recited in claim 9, wherein the alloy includes Si. ### Claim 11 A material, comprising: one or more isotopes exhibiting zero nuclear spin; wherein the one or more isotopes are selected from a group consisting of: molybdenum, tungsten, palladium, tellurium, platinum, silicon, lead, tin, zinc, indium, titanium, carbon, and oxygen; wherein the one or more isotopes are present as an alloy having a composition selected from MoSi, PdTe, PdSi, PtSi, and WSi; wherein the one or more isotopes are formed into a single crystal consisting essentially of a single crystalline phase; and wherein all atoms of the alloy are characterized by zero nuclear spin. ### Claim 12 A material, comprising: one or more isotopes exhibiting zero nuclear spin; wherein the one or more isotopes are present in the form of one or more alloys selected from: PdSi, WSi, MoSi, PtSi, PdTe, and PdTe2; and wherein the one or more isotopes are formed into a single crystal consisting essentially of a single crystalline phase. ### Claim 13 A material, comprising: one or more isotopes exhibiting zero nuclear spin; and a Pt film, the Pt film having a thickness in a range from about 0.01 nm to about 1.0 nm; wherein the one or more isotopes are selected from a group consisting of: 12C, 14N, 15N, 46Ti, 48Ti, 50Ti, 64Zn, 66Zn, 68Zn, 70Zn, 70Ge, 72Ge, 74Ge, 76Ge, 92Mo, 94Mo, 96Mo, 98Mo, 100Mo, 102Pd, 104Pd, 106Pd, 108Pd, 110Pd, 123Te, 128Te, 180W 182W, 184W, 186W, 190Pt, 192Pt, 194Pt, 196Pt, 198Pt, 204Pb, and 206Pb; wherein the one or more isotopes are formed into a single crystal consisting essentially of a single crystalline phase; wherein the Pt film coats a surface of the single crystal; wherein the material is physically and spatially isolated from any substrate material; and wherein grain boundaries of the material exclude fluctuators associated with nuclear orientation effects comprising: particles exhibiting glass-like properties; oxides; and patinas. ### Claim 14 (depends on 13) The material as recited in claim 13, wherein at least one of the one or more isotopes is present in the form of an alloy. ### Claim 15 (depends on 14) The material as recited in claim 14, wherein the alloy includes Si.