# US 10,313,618 B2 · Solid-state image sensor, imaging device, and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,313,618 B2 - Document ID: US10313618B2 - Status: Granted - Kind: B2 - Application number: 15/945,539 - Filed: 2018-04-04 - Published: 2018-08-16 - Granted: 2019-06-04 - Earliest claimed: 2014-12-18 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Takashi Machida; Kazuyoshi Yamashita - Web page: https://patentgrep.com/patent/US10313618B2 ## CPC - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - G01S 7/4863: Detector arrays, e.g. charge-transfer gates - G01S 17/89: for mapping or imaging - G01S 17/931: of land vehicles - H04N 23/67: Focus control based on electronic image sensor signals - H04N 25/57: Control of the dynamic range - H04N 25/70: SSIS architectures; Circuits associated therewith - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/12: Image sensors - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 99/00: Subject matter not provided for in other groups of this subclass - H10W 20/496: {Capacitor integral with wiring layers} - H04N 23/672: {based on the phase difference signals} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - G01S: RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present technology relates to a solid-state image sensor, an imaging device, and an electronic device capable of switching FD conversion efficiency in all pixels of a solid-state image sensor. A photodiode performs photoelectric conversion on incident light. A floating diffusion (FD) stores charge obtained by the photodiode. FD2, which is a second FD to which the capacity of an additional capacitor MIM is added, adds the capacity to the FD. The additional capacitor MIM is constituted by a first electrode formed by a wiring layer and a second electrode formed by a metallic light blocking film provided on a surface of a substrate on which the photodiode is formed. Switching between the FD and FD+FD2 allows switching of the FD conversion efficiency. The present technology is applicable to a CMOS image sensor. ## Claims ### Claim 1 An image sensor comprising: a photoelectric converter configured to perform photoelectric conversion of incident light; a charge-to-voltage converter configured to store charge obtained by the photoelectric converter; a charge storage configured to store charge transferred from the charge-to-voltage converter; a switch electrically connected to the charge-to-voltage converter and the charge storage; a wiring layer including a wiring electrically connected to a terminal of the charge-to-voltage converter and a terminal of the charge storage; and a metallic layer disposed between the photoelectric converter and the wiring layer, wherein the charge transferred from the charge-to-voltage converter is configured to be stored in at least one of the wiring layer or the metallic layer. ### Claim 2 (depends on 1) The image sensor according to claim 1, wherein the charge storage is provided for each pixel having the photoelectric converter, and when charge is stored in the charge-to-voltage converter in a given pixel, the charge storage provided in the given pixel adds a charge capacity to the charge-to-voltage converter, the added charge capacity including an additional capacity stored by the at least one of the wiring layer or the metallic layer. ### Claim 3 (depends on 2) The image sensor according to claim 2, wherein the switch is configured to switch to either of a state in which the charge-to-voltage converter and the charge storage are electrically connected with each other and a state in which the charge-to-voltage converter and the charge storage are electrically disconnected from each other. ### Claim 4 (depends on 1) The image sensor according to claim 1, wherein the metallic layer is a light blocking film made of metal. ### Claim 5 (depends on 4) The image sensor according to claim 4, wherein the metal includes tungsten. ### Claim 6 (depends on 4) The image sensor according to claim 4, wherein the light blocking film is formed for phase difference detection. ### Claim 7 (depends on 4) The image sensor according to claim 4, wherein the photoelectric converter is formed in a substrate, and wherein a polysilicon layer is provided on a surface of the substrate that is a light incident side, and the light blocking film is formed on the polysilicon layer. ### Claim 8 (depends on 7) The image sensor according to claim 7, wherein the light blocking film is formed on a transfer gate that includes the polysilicon layer provided on the surface of the substrate. ### Claim 9 (depends on 4) The image sensor according to claim 4, wherein the light blocking film shields one or more of an upper portion, a lower portion, a left portion, and a right portion of the photoelectric converter. ### Claim 10 (depends on 4) The image sensor according to claim 4, wherein, in a cross-sectional view, the light blocking film is closer to a control gate of the switch than the wiring. ### Claim 11 (depends on 4) The image sensor according to claim 4, wherein the image sensor comprises a global shutter type image sensor. ### Claim 12 (depends on 11) The image sensor according to claim 11, wherein the wiring layer is provided at a position opposed to the light blocking film on a storage unit of the global shutter type image sensor. ### Claim 13 An electronic device comprising: an image sensor comprising: a photoelectric converter configured to perform photoelectric conversion of incident light; a charge-to-voltage converter configured to store charge obtained by the photoelectric converter; a charge storage configured to store charge transferred from the charge-to-voltage converter; a switch electrically connected to the charge-to-voltage converter and the charge storage; a wiring layer including a wiring electrically connected to a terminal of the charge-to-voltage converter and a terminal of the charge storage; and a metallic layer disposed between the photoelectric converter and the wiring layer, wherein the charge transferred from the charge-to-voltage converter is configured to be stored in at least one of the wiring layer or the metallic layer.