# US 10,313,611 B2 · Image sensor with pixel binning device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,313,611 B2 - Document ID: US10313611B2 - Status: Granted - Kind: B2 - Application number: 15/613,147 - Filed: 2017-06-03 - Published: 2018-12-06 - Granted: 2019-06-04 - Earliest claimed: 2017-06-03 - Assignees: United Microelectronics Corp. - Applicants: United Microelectronics Corp. - Inventors: Zhibiao Zhou - Web page: https://patentgrep.com/patent/US10313611B2 ## CPC - H04N 23/667: Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes - H04N 25/46: by combining or binning pixels - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract An image sensor includes a first pixel and a second pixel. The first pixel receives a first signal sensed by a first photodiode. The second pixel receives a second signal sensed by a second photodiode. A pixel binning device includes a first transistor, a second transistor and a binning circuit, wherein the first transistor switchably couples to the first pixel to transfer the first signal, the second transistor switchably couples to the second pixel to transfer the second signal, and the binning circuit couples to the first transistor and the second transistor to bin the first signal and the second signal. ## Claims ### Claim 1 An image sensor, comprising: a first pixel comprising a first photodiode and a first transistor module, wherein the first transistor module couples to the first photodiode to receive a first signal sensed by the first photodiode; a second pixel comprising a second photodiode and a second transistor module, wherein the second transistor module couples to the second photodiode to receive a second signal sensed by the second photodiode; and a pixel binning device comprising a first transistor, a second transistor and a binning circuit, wherein the first transistor switchably couples to the first transistor module to transfer the first signal, the second transistor switchably couples to the second transistor module to transfer the second signal, the binning circuit couples to the first transistor and the second transistor to bin the first signal and the second signal, and the first transistor and the second transistor are simultaneously turned on or off. ### Claim 2 (depends on 1) The image sensing structure of claim 1, further comprising: a first sensing line coupling to the first transistor module, wherein the first sensing line transfers the first signal when the first transistor is switched off; and a second sensing line coupling to the second transistor module, wherein the second sensing line transfers the second signal when the second transistor is switched off. ### Claim 3 (depends on 2) The image sensor of claim 2, wherein the first sensing line does not couple to the second sensing line. ### Claim 4 (depends on 2) The image sensor of claim 2, wherein a common select line stacks on the first sensing line. ### Claim 5 (depends on 1) The image sensor of claim 1, wherein the first signal does not bin with the second signal when the first transistor and the second transistor are turned off. ### Claim 6 (depends on 1) The image sensor of claim 1, further comprising: a common select line coupling to the first transistor and the second transistor to simultaneously turn on or off the first transistor and the second transistor. ### Claim 7 (depends on 1) The image sensor of claim 1, wherein the first transistor stacks on the first pixel, and the first transistor overlaps the first pixel. ### Claim 8 (depends on 1) The image sensor of claim 1, wherein the first transistor module comprises a three-transistor image module or a two-transistor image module. ### Claim 9 (depends on 1) The image sensor of claim 1, wherein when the image sensor is in video mode, the first transistor and the second transistor are turned on, and when the image sensor is in photography mode, the first transistor and the second transistor are turned off. ### Claim 10 An image sensor, comprising: a first pixel comprising a first photodiode and a first transistor module, wherein the first transistor module couples to the first photodiode to receive a first signal sensed by the first photodiode; a first sensing line coupling to the first transistor module to transfer the first signal to a readout circuitry; a second pixel comprising a second photodiode and a second transistor module, wherein the second transistor module couples to the second photodiode to receive a second signal sensed by the second photodiode; a third pixel comprising a third photodiode and a third transistor module, wherein the third transistor module couples to the third photodiode to receive a third signal sensed by the third photodiode; a pixel binning device comprising a second transistor, a third transistor and a binning circuit, wherein the second transistor switchably couples to the second transistor module to transfer the second signal, the third transistor switchably couples to the third transistor module to transfer the third signal, and the binning circuit couples to the second transistor, the third transistor and the first sensing line to bin the third signal, the second signal and the first signal, and wherein the second transistor and the third transistor are simultaneously turned on or off. ### Claim 11 (depends on 10) The image sensor of claim 10, further comprising: a common select line coupling to the second transistor and the third transistor to simultaneously turn on or off the second transistor and the third transistor. ### Claim 12 (depends on 10) The image sensor of claim 10, further comprising: a second sensing line coupling to the second transistor module, wherein the second transistor module transfers the second signal to the readout circuitry when the second transistor is switched off. ### Claim 13 (depends on 12) The image sensor of claim 12, wherein the first sensing line does not couple to the second sensing line. ### Claim 14 (depends on 10) The image sensor of claim 10, wherein the first signal does not bin with the second signal when the second transistor is turned off. ### Claim 15 (depends on 10) The image sensor of claim 10, wherein the second transistor stacks on the second pixel, and the second transistor overlaps the second pixel. ### Claim 16 (depends on 10) The image sensor of claim 10, wherein the first transistor module comprises at least one first readout transistor, and the second transistor module comprises at least one second readout transistor. ### Claim 17 (depends on 10) The image sensor of claim 10, wherein when the image sensor is in video mode, the second transistor is turned on, and when the image sensor is in photography mode, the second transistor is turned off.