# US 10,312,905 B2 · Adjustable losses on bond wire arrangement > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,905 B2 - Document ID: US10312905B2 - Status: Granted - Kind: B2 - Application number: 15/985,642 - Filed: 2018-05-21 - Published: 2018-09-20 - Granted: 2019-06-04 - Earliest claimed: 2018-05-21 - Assignees: NXP USA, Inc. - Applicants: NXP USA, Inc. - Inventors: Youri Volokhine - Web page: https://patentgrep.com/patent/US10312905B2 ## CPC - H03K 17/689: with galvanic isolation between the control circuit and the output circuit (H03K17/78 takes precedence) - H10W 72/90: Bond pads, in general - H03F 3/193: with field-effect devices (H03F3/195 takes precedence) - H03F 3/195: in integrated circuits - H03F 3/213: in integrated circuits - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H03F 2200/411: the output amplifying stage of an amplifier comprising two power stages - H03F 2200/451: the amplifier being a radio frequency amplifier - H03F 2200/541: Transformer coupled at the output of an amplifier - H10W 44/206: {Wires} - H10W 44/234: {Arrangements for impedance matching} - H10W 72/075: {of bond wires} - H10W 72/07553: {changes in shapes} - H10W 72/5363: {the connected ends being wedge-shaped} - H10W 72/537: {Multiple bond wires having different shapes} - H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements} - H10W 72/5524: {comprising aluminium [Al]} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/932: {Plan-view shape, i.e. in top view} - H10W 72/951: {Materials of bond pads} - H10W 72/957: {Multiple bond pads having different materials} - H10W 80/754: {having material changed during the connecting} - H10W 90/753: {between laterally-adjacent chips} - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H03F: AMPLIFIERS ## Abstract The invention provides a bond wire arrangement comprising a signal bond wire (1) for operably connecting a first electronic device (6) to a second electronic device (8), and a control bond wire (2) being arranged alongside the signal bond wire at a distance so as to have a magnetic coupling with the signal bond wire (1), and having a first end (11) coupled to ground, and a second end (12) coupled to ground via a resistive element (14). The proposed solution allows the control of the Q factor (losses) of wire bond inductors during assembly phase, which will save time and reduce overall design cycle as compared to known methods. ## Claims ### Claim 1 A radio frequency (RF) circuit comprising: a switching device having a plurality of terminals, including a control terminal, a first output terminal, and a second output terminal; a first inductance, the first inductance having a first connector and a second connector, wherein the first connector is coupled to one of the plurality of terminals of the switching device, and the first inductance is embodied as a first bond wire; a first capacitance having a first connector and a second connector, wherein the first connector of the first capacitance is coupled to the second connector of the first inductance, and the second connector of the first capacitance is coupled to ground; and a bypass network electrically coupled only to ground and not electrically coupled to the switching device, to the first inductance, or to other circuitry, wherein the bypass network includes a second bond wire arranged alongside the first bond wire at a distance so as to have a magnetic coupling with the first bond wire, wherein the second bond wire is not electrically coupled to the first bond wire, wherein the second bond wire has a first end and a second end, and wherein the first end of the second bond wire is coupled to ground, and a resistive element, wherein a second end of the second bond wire is coupled to ground through the resistive element. ### Claim 2 (depends on 1) The RF circuit of claim 1, wherein the first bond wire and the second bond wire have different shapes, the different shapes selected to result in a coupling factor between the first bond wire and the second bond wire that reduces a quality factor (Qeq). ### Claim 3 (depends on 2) The RF circuit of claim 2, wherein the different shapes comprise the first bond wire and the second bond wire having different heights. ### Claim 4 (depends on 1) The RF circuit of claim 1, wherein a coupling factor between the first and second bond wires is between 0.1-0.7. ### Claim 5 (depends on 1) The RF circuit of claim 1, wherein the distance between the first and second bond wires is less than 200 microns. ### Claim 6 (depends on 1) The RF circuit of claim 1, wherein the resistive element has a resistance between 0.2 Ohm and 5 Ohm. ### Claim 7 (depends on 1) The RF circuit of claim 1, wherein the resistive element comprises a resistor. ### Claim 8 (depends on 1) The RF circuit of claim 1, wherein the second bond wire is coupled to a metal bonding pad at the second end, and wherein the resistive element comprises a semiconductor layer formed under the metal bonding pad. ### Claim 9 (depends on 1) The RF circuit of claim 1, wherein the bypass network further comprises: a second capacitance coupled in series with the resistive element. ### Claim 10 (depends on 9) The RF circuit of claim 9, wherein a value of the second capacitance creates a resonance below a frequency of operation of the RF circuit. ### Claim 11 A radio frequency (RF) circuit comprising: a switching device having a plurality of terminals, including a control terminal, a first output terminal, and a second output terminal; a first inductance, the first inductance having a first connector and a second connector, wherein the first connector is coupled to one of the plurality of terminals of the switching device, and the first inductance is embodied as a first bond wire; a first capacitance having a first connector and a second connector, wherein the first connector of the first capacitance is coupled to the second connector of the first inductance, and the second connector of the first capacitance is coupled to ground; and a wire bond arrangement that includes the first bond wire, a second bond wire arranged alongside the first bond wire at a distance so as to have a magnetic coupling with the first bond wire, wherein the second bond wire has a first end and a second end, wherein the first end of the second bond wire is coupled to ground, a resistive element, wherein a second end of the second bond wire is coupled to ground through the resistive element, and a third bond wire arranged alongside the first bond wire at a second distance so as to have a second magnetic coupling with the first bond wire, wherein the third bond wire is arranged at a side of the first bond wire opposite from a side where the second bond wire is arranged. ### Claim 12 (depends on 1) The RF circuit of claim 1, wherein: the first inductance is a shunt inductor coupled to the first output terminal of the switching device; and the first capacitance is a DC blocking capacitor arranged in series with the shunt inductor so as to connect the first output terminal of the switching device to ground. ### Claim 13 A radio frequency (RF) circuit comprising: a switching device having a control terminal, a first output terminal, and a second output terminal; a first inductance, the first inductance having a first connector and a second connector, wherein the first connector is coupled to the control terminal of the switching device, the second connector is coupled to ground, and the first inductance is embodied as a first bond wire; and a wire bond arrangement that includes the first bond wire, a second bond wire arranged alongside the first bond wire at a distance so as to have a magnetic coupling with the first bond wire, wherein the second bond wire has a first end and a second end, wherein the first end of the second bond wire is coupled to ground, and a resistive element, wherein a second end of the second bond wire is coupled to ground through the resistive element. ### Claim 14 (depends on 13) The RF circuit of claim 13, further comprising: a first capacitance having a first connector and a second connector, wherein the first connector of the first capacitance is coupled to the second connector of the first inductance, and the second connector of the first capacitance is coupled to ground. ### Claim 15 (depends on 13) The RF circuit of claim 13, wherein the first bond wire and the second bond wire have different shapes, the different shapes selected to result in a coupling factor between the first bond wire and the second bond wire that reduces a quality factor (Qeq), and wherein the coupling factor between the first and second bond wires is between 0.1-0.7. ### Claim 16 (depends on 13) The RF circuit of claim 13, wherein the distance between the first and second bond wires is less than 200 microns. ### Claim 17 (depends on 13) The RF circuit of claim 13, wherein the wire bond arrangement further comprises: a capacitance coupled in series with the resistive element. ### Claim 18 A radio frequency (RF) circuit comprising: a switching device having a control terminal, a first output terminal, and a second output terminal; a first inductance, the first inductance having a first connector and a second connector, wherein the first connector is coupled to the first output terminal of the switching device, the second connector is coupled to ground, and the first inductance is embodied as a first bond wire; and a bypass network electrically coupled only to ground and not electrically coupled to the switching device, to the first inductance, or to other circuitry, wherein the bypass network includes a second bond wire arranged alongside the first bond wire at a distance so as to have a magnetic coupling with the first bond wire, wherein the second bond wire is not electrically coupled to the first bond wire, wherein the second bond wire has a first end and a second end, and wherein the first end of the second bond wire is coupled to ground, and a resistive element, wherein a second end of the second bond wire is coupled to ground through the resistive element. ### Claim 19 (depends on 18) The RF circuit of claim 18, further comprising: a first capacitance having a first connector and a second connector, wherein the first connector of the first capacitance is coupled to the second connector of the first inductance, and the second connector of the first capacitance is coupled to ground. ### Claim 20 (depends on 18) The RF circuit of claim 18, wherein the first bond wire and the second bond wire have different shapes, the different shapes selected to result in a coupling factor between the first bond wire and the second bond wire that reduces a quality factor (Qeq), and wherein the coupling factor between the first and second bond wires is between 0.1-0.7. ### Claim 21 (depends on 18) The RF circuit of claim 18, wherein the distance between the first and second bond wires is less than 200 microns. ### Claim 22 (depends on 18) The RF circuit of claim 18, wherein the bypass network further comprises: a capacitance coupled in series with the resistive element. ### Claim 23 (depends on 18) The RF circuit of claim 18, wherein: the first inductance is a shunt inductor coupled to the first output terminal of the switching device; and the RF circuit further comprises a DC blocking capacitor coupled in series with the shunt inductor so as to connect the first output terminal of the switching device to ground.