# US 10,312,432 B2 · Magnetic memory device and techniques for forming

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- Number: US 10,312,432 B2
- Document ID: US10312432B2
- Status: Granted
- Kind: B2
- Application number: 15/091,846
- Filed: 2016-04-06
- Published: 2017-10-12
- Granted: 2019-06-04
- Earliest claimed: 2016-04-06
- Assignees: Varian Semiconductor Equipment Associates, Inc.
- Applicants: Varian Semiconductor Equipment Associates, Inc.
- Inventors: Tsung-Liang Chen; Shurong Liang; Alexander C. Kontos
- Web page: https://patentgrep.com/patent/US10312432B2

## CPC

- H10N 50/80: Constructional details
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first insulator material; depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second insulator material; and depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material.

## Claims

### Claim 1

A method, comprising:
providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers;
depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a first nitride material;
depositing an encapsulation layer on the interface layer, the encapsulation layer comprising a second nitride material; and
depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising a third insulator material, wherein the depositing the interface layer comprises selecting a reaction chemistry that prevents formation of halogen-containing radicals, amino groups or reactive oxygen radicals.

### Claim 2 (depends on 1)

The method of claim 1, the first insulator material comprising silicon nitride or Si—C—N.

### Claim 3 (depends on 1)

The method of claim 1, the second insulator material comprising silicon nitride.

### Claim 4 (depends on 1)

The method of claim 1, the interface layer having a thickness of one to ten nanometers.

### Claim 5 (depends on 1)

The method of claim 1, the depositing the interface layer comprising using a plasma enhanced atomic layer deposition process.

### Claim 6 (depends on 1)

The method of claim 1, the depositing the encapsulation layer comprising growing the encapsulation layer using a plasma enhanced chemical vapor deposition process.

### Claim 7 (depends on 1)

The method of claim 1, wherein the device stack comprises a magnetic tunnel junction device having a plurality of magnetic layers and at least one insulator layer.

### Claim 8 (depends on 5)

The method of claim 5, wherein the depositing the interface layer takes place at a temperature of 150° C. to 250° C.

### Claim 9 (depends on 1)

The method of claim 1, wherein the depositing the interface layer takes place at a temperature of 150° C. to 400° C.

### Claim 10 (depends on 1)

The method of claim 1, wherein the depositing the interface layer comprises providing silyl-terminated molecules or alkylaminosilanes molecules.

### Claim 11

A method of forming a magnetic device, comprising:
providing a device stack, the device stack extending above a substrate base and comprising sidewall portions, the device stack further including a plurality of magnetic layers;
depositing an interface layer conformally over the device stack using an atomic layer deposition process, the interface layer comprising a nitride material having a thickness of one nanometer to three nanometers;
depositing an encapsulation layer on the interface layer, the encapsulation layer comprising silicon nitride; and
depositing an interlevel dielectric disposed on the encapsulation layer, the interlevel dielectric comprising an insulating material, wherein the depositing the interface layer comprises selecting a reaction chemistry that prevents formation of halogen-containing radicals, amino groups or reactive oxygen radicals.

### Claim 12 (depends on 11)

The method of claim 11, wherein the insulator material of the interface layer is a S—C—N mixture.

### Claim 13 (depends on 11)

The method of claim 11, wherein the depositing the interface layer comprises depositing the insulator material while not exposing the device stack to a plasma.