# US 10,312,428 B2 · Piezoelectric thin film, piezoelectric thin film device, target, and methods for manufacturing piezoelectric thin film and piezoelectric thin film device

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- Number: US 10,312,428 B2
- Document ID: US10312428B2
- Status: Granted
- Kind: B2
- Application number: 15/245,636
- Filed: 2016-08-24
- Published: 2016-12-15
- Granted: 2019-06-04
- Earliest claimed: 2014-05-19
- Assignees: Murata Manufacturing Co., Ltd.
- Applicants: Murata Manufacturing Co., Ltd.
- Inventors: Shinsuke Ikeuchi; Toshimaro Yoneda; Yoshitaka Matsuki; Naoyuki Endo
- Web page: https://patentgrep.com/patent/US10312428B2

## CPC

- H10N 30/8542: {Alkali metal based oxides, e.g. lithium, sodium or potassium niobates}
- C04B 35/465: based on alkaline earth metal titanates
- C04B 35/495: based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
- C04B 35/499: containing also titanates
- C04B 35/62222: {obtaining ceramic coatings (coating of mortars, concrete, artificial or natural stone or ceramics C04B41/45; laminated ceramic products B32B18/00; coating of glass C03C17/00, applying ceramic coatings on silicon for semi-conductor purposes H10W; coating metallic materials C23)}
- C23C 14/024: {Deposition of sublayers, e.g. to promote adhesion of the coating (C23C14/027 takes precedence)}
- C23C 14/08: Oxides (C23C14/10 takes precedence)
- C23C 14/088: {of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal}
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)}
- H01J 37/3426: {Material}
- H10N 30/076: by vapour phase deposition
- H10N 30/082: by etching, e.g. lithography
- H10N 30/2045: {adapted for in-plane bending displacement}
- H10N 30/704: {based on piezoelectric or electrostrictive films or coatings}
- H10N 30/853: Ceramic compositions
- H10N 30/87: Electrodes or interconnections, e.g. leads or terminals
- C04B 2235/3201: Alkali metal oxides or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3236: Alkaline earth titanates
- C04B 2235/3255: Niobates or tantalates, e.g. silver niobate
- C04B 2235/3262: Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.

## Claims

### Claim 1

A piezoelectric thin film comprising a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.

### Claim 2 (depends on 1)

The piezoelectric thin film according to claim 1, wherein x is within the range of 0.52≤x≤1.

### Claim 3 (depends on 1)

The piezoelectric thin film according to claim 1, wherein x is within the range of 0.52≤x≤0.74.

### Claim 4 (depends on 1)

The piezoelectric thin film according to claim 1, wherein x is within the range of 0.61≤x≤0.74.

### Claim 5 (depends on 1)

The piezoelectric thin film according to claim 1, wherein n is within the range of 0.005≤n≤0.065.

### Claim 6 (depends on 1)

The piezoelectric thin film according to claim 1, wherein n is within the range of 0.011≤n≤0.059.

### Claim 7 (depends on 1)

The piezoelectric thin film according to claim 1, wherein the piezoelectric thin film further comprises Mn.

### Claim 8 (depends on 7)

The piezoelectric thin film according to claim 7, wherein the content of Mn is more than 0.1 mol and no more than 10 mol relative to 100 mol of the composition represented by the general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3.

### Claim 9 (depends on 1)

A piezoelectric thin film device comprising:
a substrate;
the piezoelectric thin film of claim 1 disposed on the substrate; and
first and second electrodes disposed so as have the piezoelectric thin film interposed therebetween.

### Claim 10

A target comprising a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x are within the ranges of 1≤m≤1.05, 0≤n≤0.065, and 0≤x≤1.

### Claim 11 (depends on 10)

The target according to claim 10, wherein n and x are within the ranges of 0.005≤n≤0.065 and 0.43≤x≤0.74.

### Claim 12 (depends on 10)

The target according to claim 10, wherein n and x are within the ranges of 0.011≤n≤0.059 and 0.52≤x≤0.74.