# US 10,312,426 B2 · Giant cross-plane seebeck effect in oxide metal semiconductor superlattices for spin-magnetic thermoelectric devices

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- Number: US 10,312,426 B2
- Document ID: US10312426B2
- Status: Granted
- Kind: B2
- Application number: 13/840,378
- Filed: 2013-03-15
- Published: 2014-09-18
- Granted: 2019-06-04
- Earliest claimed: 2011-03-08
- Assignees: Purdue Research Foundation
- Applicants: Purdue Research Foundation
- Inventors: Pankaj Jha; Timothy D. Sands
- Web page: https://patentgrep.com/patent/US10312426B2

## CPC

- H10N 10/857: comprising compositions changing continuously or discontinuously inside the material
- H10N 10/855: comprising compounds containing boron, carbon, oxygen or nitrogen
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

Lanthanum strontium manganate (La0.67Sr0.33MnO3, i.e., LSMO)/lanthanum manganate (LaMnO3, i.e., LMO) perovskite oxide metal/semiconductor superlattices were investigated for potential p-type thermoelectric applications. Growth optimizations were performed using pulsed laser deposition to achieve epitaxial superlattices of LSMO (metal)/LMO (p-type semiconductor) on strontium titanate (STO) substrates. The cross-plane Seebeck coefficient of the thermoelectric superlattice measured between the substrate and the capping layer has a value of at least 1600 μV/K measured at about 300K.

## Claims

### Claim 1

A thermoelectric superlattice, comprising:
a substrate;
a buffer layer disposed on the substrate;
at least one set of alternating layers of perovskites oxide La0.67Sr0.33MnO3 (LSMO) and LaMnO3 (LMO) disposed on the buffer layer; and
a capping layer disposed on the at least one set of LSMO and LMO,
the cross-plane electrical conductivity of the thermoelectric superlattice measured between the substrate and the capping layer having a value of at least 8×10−4 ohm−1−cm−1 measured at about 300K; and
wherein each layer in the at least one set of alternating layers has a same thickness, and wherein said same thickness is 2-21 nm and wherein the thickness of the capping layer is 3-20 times said same thickness.

### Claim 2 (depends on 1)

The thermoelectric superlattice of claim 1, the substrate is one of strontium titanate (STO), (La,Sr)(Al,Ta)O3 (LSAT) and lanthanum aluminate (LaAlO3).

### Claim 3 (depends on 1)

The thermoelectric superlattice of claim 1, the substrate has a lattice mismatch with the at least one set of LSMO and LMO of less than 5%.

### Claim 4 (depends on 1)

The thermoelectric superlattice of claim 1, the substrate has a lattice mismatch with the at least one set of LSMO and LMO of less than 2%.

### Claim 5 (depends on 1)

The thermoelectric superlattice of claim 1, the substrate has a lattice mismatch with the at least one set of LSMO and LMO of less than 1%.

### Claim 6 (depends on 1)

The thermoelectric superlattice of claim 1, the buffer layer having a thickness of between 50 nm to 500 nm.

### Claim 7 (depends on 1)

The thermoelectric superlattice of claim 1, the cross-plane electrical conductivity of the thermoelectric superlattice having a value of at least 6.3×10−3 1/(ohm·cm) measured at about 300K.

### Claim 8 (depends on 1)

The thermoelectric superlattice of claim 1, the capping layer is between about 50 nm and 200 nm.

### Claim 9 (depends on 1)

The thermoelectric superlattice of claim 1, the cross-plane Seebeck coefficient measured between the substrate and the capping layer is at least 1520 μV/K at about 300K and the cross-plane thermal conductivity measured between the substrate and the capping layer is between 0.5 and 1.5 W/(m·K) at about 300K.