# US 10,312,424 B2 · Semiconductor light emitting element and backlight assembly including the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,424 B2 - Document ID: US10312424B2 - Status: Granted - Kind: B2 - Application number: 15/452,217 - Filed: 2017-03-07 - Published: 2017-09-14 - Granted: 2019-06-04 - Earliest claimed: 2016-03-14 - Assignees: Lumens Co., Ltd. - Applicants: Lumens Co., Ltd. - Inventors: Seung Hyun Oh; Yun Geon Cho; Bo Gyun Kim; Suk Min Han; Jun Hyeok Han; In Woo Son - Web page: https://patentgrep.com/patent/US10312424B2 ## CPC - H10H 20/856: Reflecting means - F21V 19/0015: {Fastening arrangements intended to retain light sources} - G02F 1/133603: {with LEDs} - G02F 1/133605: {including specially adapted reflectors} - H10H 20/8506: {Containers} - H10H 20/851: Wavelength conversion means - H10H 20/8515: {not being in contact with the bodies} - H10W 90/00: Package configurations - F21Y 2115/10: Light-emitting diodes [LED] - G02F 1/133614: {using photoluminescence, e.g. phosphors illuminated by UV or blue light} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - F21V: FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - F21Y: INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED ## Abstract Disclosed herein are a semiconductor light emitting element and a backlight assembly including the same. The semiconductor light emitting element includes: a light emitting element chip including a first pad and a second pad and having an upper surface and a side surface; a wavelength conversion layer famed on the upper surface and the side surface of the light emitting element chip; a sidewall reflection part famed to be spaced apart from the side surface of the light emitting element chip; and a bottom surface reflection part famed to protrude at a lower portion of the sidewall reflection part. The sidewall reflection part and the bottom surface reflection part of the light emitting element are configured to reflect light in a direction in which the light penetrates through an upper surface of the wavelength conversion layer, the light being generated from the light emitting element chip. ## Claims ### Claim 1 A semiconductor light emitting element comprising: a light emitting element chip including a first pad, a second pad, an upper surface and a side surface; a wavelength conversion layer formed on the upper surface and the side surface of the light emitting element chip; a sidewall reflection part having an inner surface facing the light emitting element chip, the inner surface being parallel to the side surface of the light emitting element chip and being spaced apart from the side surface of the light emitting element chip; and a bottom surface reflection part protruding from a lower portion of the sidewall reflection part and having an arc shape, wherein the sidewall reflection part and the bottom surface reflection part are configured to reflect light in a direction in which the light penetrates through an upper surface of the wavelength conversion layer, the light being generated from the light emitting element chip, wherein the light emitting element chip includes: a first semiconductor layer having a first polarity; a second semiconductor layer having a second polarity and disposed lower than the first semiconductor layer; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein a height of the bottom surface reflection part is equal to or greater than that of the active layer, and wherein a bottom surface of the second semiconductor layer is exposed to a lower side of the semiconductor light emitting element. ### Claim 2 (depends on 1) The semiconductor light emitting element of claim 1, wherein the wavelength conversion layer includes: a sidewall wavelength conversion part positioned in a side surface space part formed between the sidewall reflection part and the side surface of the light emitting element chip; and a main surface wavelength conversion part positioned on the upper surface of the light emitting element chip. ### Claim 3 (depends on 1) The semiconductor light emitting element of claim 1, wherein the bottom surface reflection part satisfies the following Equation: 1d≤R≤20d where R is a radius of the bottom surface reflection part, and d is a distance between the light emitting element chip and the sidewall reflection part (0.1 mm≤d≤0.3 mm). ### Claim 4 (depends on 1) The semiconductor light emitting element of claim 1, wherein the light emitting element chip comprises a flip-type light emitting element chip. ### Claim 5 (depends on 1) The semiconductor light emitting element of claim 1, wherein a portion of the wavelength conversion layer is disposed between the inner surface of the sidewall reflection part and the side surface of the light emitting element chip. ### Claim 6 (depends on 1) The semiconductor light emitting element of claim 1, wherein the inner surface of the sidewall reflection part is in contact with the wavelength conversion layer. ### Claim 7 A backlight assembly comprising: a circuit board; and a semiconductor light emitting element installed on the circuit board, wherein the semiconductor light emitting element includes: a light emitting element chip including a first pad, a second pad, an upper surface and a side surface; a wavelength conversion layer formed on the upper surface and the side surface of the light emitting element chip; a sidewall reflection part having an inner surface facing the light emitting element chip, the inner surface being parallel to the side surface of the light emitting element chip and being spaced apart from the side surface of the light emitting element chip; and a bottom surface reflection part protruding from a lower portion of the sidewall reflection part and having an arc shape, and wherein the sidewall reflection part and the bottom surface reflection part are configured to reflect light in a direction in which the light penetrates through an upper surface of the wavelength conversion layer, the light being generated from the light emitting element chip, wherein the light emitting element chip includes: a first semiconductor layer having a first polarity; a second semiconductor layer having a second polarity and disposed lower than the first semiconductor layer; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein a height of the bottom surface reflection part is equal to or greater than that of the active layer, and wherein a bottom surface of the second semiconductor layer contacts directly with an upper side of the circuit board. ### Claim 8 (depends on 7) The backlight assembly of claim 7, wherein the wavelength conversion layer includes: a sidewall wavelength conversion part positioned in a side surface space part formed between the sidewall reflection part and the side surface of the light emitting element chip; and a main surface wavelength conversion part positioned on the upper surface of the light emitting element chip. ### Claim 9 (depends on 7) The backlight assembly of claim 7, wherein the light emitting element chip comprises a flip-type light emitting element chip. ### Claim 10 (depends on 7) The backlight assembly of claim 7, wherein a portion of the wavelength conversion layer is disposed between the inner surface of the sidewall reflection part and the side surface of the light emitting element chip. ### Claim 11 (depends on 7) The backlight assembly of claim 7, wherein the inner surface of the sidewall reflection part is in contact with the wavelength conversion layer. ### Claim 12 A semiconductor light emitting element comprising: a light emitting element chip including a first pad, a second pad, an upper surface and a side surface; a wavelength conversion layer formed on the upper surface and the side surface of the light emitting element chip; a sidewall reflection part having an inner surface in contact with the wavelength conversion layer, the inner surface being parallel to the side surface of the light emitting element chip and being spaced apart from the side surface of the light emitting element chip with the wavelength conversion layer being disposed between the inner surface of the sidewall reflection part and the side surface of the light emitting element; and a bottom surface reflection part protruding from a lower portion of the sidewall reflection part towards the light emitting element chip, wherein the light emitting element chip includes: a first semiconductor layer having a first polarity; a second semiconductor layer having a second polarity and disposed lower than the first semiconductor layer; and an active layer disposed between the first semiconductor layer and the second semiconductor layer, wherein a height of the bottom surface reflection part is equal to or higher than that of the active layer, and wherein a bottom surface of the second semiconductor layer is exposed to a lower side of the semiconductor light emitting element. ### Claim 13 (depends on 12) The semiconductor light emitting element of claim 12, wherein the bottom surface reflection part has an arc shape. ### Claim 14 (depends on 12) The semiconductor light emitting element of claim 12, wherein the wavelength conversion layer includes: a sidewall wavelength conversion part positioned in a side surface space part formed between the sidewall reflection part and the side surface of the light emitting element chip; and a main surface wavelength conversion part positioned on the upper surface of the light emitting element chip. ### Claim 15 (depends on 12) The semiconductor light emitting element of claim 12, wherein the bottom surface reflection part satisfies the following Equation: 1d≤R≤20d where R is a radius of the bottom surface reflection part, and d is a distance between the light emitting element chip and the sidewall reflection part. ### Claim 16 (depends on 12) The semiconductor light emitting element of claim 12, wherein the light emitting element chip comprises a flip-type light emitting element chip.