# US 10,312,414 B1 · Light emitting unit and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,414 B1 - Document ID: US10312414B1 - Status: Granted - Kind: B1 - Application number: 15/829,395 - Filed: 2017-12-01 - Published: 2019-06-06 - Granted: 2019-06-04 - Earliest claimed: 2017-12-01 - Assignees: Innolux Corporation - Applicants: InnoLux Corporation - Inventors: Jia-Yuan Chen; Kuan-Feng Lee; Tsung-Han Tsai; Hsiao-Lang Lin; Jui-Jen Yueh - Web page: https://patentgrep.com/patent/US10312414B1 ## CPC - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/8314: {extending at least partially onto an outer side surface of the bodies} - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/8512: {Wavelength conversion materials} - H10H 20/852: Encapsulations - H10H 20/854: characterised by their material, e.g. epoxy or silicone resins - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 90/00: Package configurations - H10H 20/8515: {not being in contact with the bodies} - H10H 20/856: Reflecting means - H10H 20/872: {Periodic patterns for optical field-shaping, e.g. photonic bandgap structures} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A light emitting unit and a display device is disclosed, wherein the display device includes: a light emitting unit, including: a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; and a first protecting layer disposed on the second semiconductor layer, wherein the first protecting layer includes oxygen, nitrogen, and at least one element selected from the group consisting of Al, Ga, In, and Si. ## Claims ### Claim 1 A display device, comprising: a light emitting unit, comprising: a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; and a first protecting layer disposed on the second semiconductor layer, wherein the first protecting layer comprises oxygen, nitrogen, and at least one element selected from the group consisting of Al, Ga, In, and Si; wherein, close to the second semiconductor layer, the first protecting layer has a first oxygen atomic percentage and a first nitrogen atomic percentage, and the first oxygen atomic percentage is less than the first nitrogen atomic percentage. ### Claim 2 (depends on 1) The display device of claim 1, wherein the first protecting layer has a first top surface, the first semiconductor layer has a second top surface, the first top surface has a first roughness, the second top surface has a second roughness, and the first roughness is greater than the second roughness. ### Claim 3 (depends on 1) The display device of claim 1, wherein the light emitting unit further comprises a second protecting layer disposed on the first protecting layer, the first protecting layer has a first top surface, the second protecting layer has a third top surface, the first top surface has a first roughness, the third top surface has a third roughness, and the first roughness is greater than the third roughness. ### Claim 4 (depends on 1) The display device of claim 1, wherein the light emitting unit further comprises a second protecting layer disposed on the first protecting layer, the second protecting layer has a second oxygen atomic percentage, and the first oxygen atomic percentage is less than the second oxygen atomic percentage. ### Claim 5 (depends on 1) The display device of claim 1, wherein the light emitting unit further comprises a second protecting layer disposed on the first protecting layer, the second protecting layer has a second nitrogen atomic percentage, and the first nitrogen atomic percentage is less than the second nitrogen atomic percentage. ### Claim 6 (depends on 1) The display device of claim 1, wherein the light emitting unit further comprises a first electrode and a second electrode, the first electrode electrically connects to the second semiconductor layer, and the second electrode electrically connects to the first semiconductor layer. ### Claim 7 (depends on 6) The display device of claim 6, wherein the first electrode and the second electrode are disposed below the first semiconductor layer, a via hole penetrates through the first semiconductor layer and the active layer, and at least a part of the first electrode is disposed in the via hole. ### Claim 8 (depends on 7) The display device of claim 7, wherein a part of the via hole is further extended into the second semiconductor layer. ### Claim 9 (depends on 7) The display device of claim 7, wherein the light emitting unit further comprises a passivation layer, the passivation layer is disposed between the first electrode in the via hole and the first semiconductor layer, and the passivation layer is also disposed on a side wall of the via hole. ### Claim 10 (depends on 6) The display device of claim 6, wherein the light emitting unit further comprises a reflecting layer, the first semiconductor layer has a bottom surface, the second electrode is disposed on the bottom surface, and the reflecting layer is disposed on the bottom surface without the second electrode formed thereon. ### Claim 11 (depends on 10) The display device of claim 10, wherein the reflecting layer is further disposed on side walls of the first semiconductor layer, the active layer and the second semiconductor layer. ### Claim 12 (depends on 10) The display device of claim 10, wherein the reflecting layer has a multilayer structure, and each layer of the multilayer structure is an oxide film, a nitride film, an oxynitride film, or a combination thereof. ### Claim 13 (depends on 6) The display device of claim 6, wherein the light emitting unit further comprises a light converting layer disposed on the first protecting layer, and the light converting layer comprises an encapsulating layer and quantum dots dispersed in the encapsulating layer. ### Claim 14 (depends on 13) The display device of claim 13, wherein the light emitting unit further comprises a third protecting layer disposed on the light converting layer. ### Claim 15 (depends on 13) The display device of claim 13, wherein the light emitting unit further comprises a first encapsulating layer, the first encapsulating layer is around a part of the first electrode and a part of the second electrode, and the first encapsulating layer is disposed on side walls of the first semiconductor layer, the active layer and the second semiconductor layer. ### Claim 16 (depends on 15) The display device of claim 15, wherein the light emitting unit further comprises a third protecting layer, and the third protecting layer is disposed on the light converting layer and a side wall of the first encapsulating layer. ### Claim 17 (depends on 16) The display device of claim 16, wherein the light converting layer is disposed between the third protecting layer and the side wall of the first encapsulating layer. ### Claim 18 (depends on 13) The display device of claim 13, further comprises a base, wherein a first pad and a second pad are disposed on the base, the light emitting unit is disposed on the base, the first electrode electrically connects to the first pad, the second electrode electrically connects to the second pad, and a second encapsulating layer is around a part of the first electrode, a part of the second electrode, the first pad and the second pad. ### Claim 19 A light emitting unit, comprising: a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; and a first protecting layer disposed on the second semiconductor layer, wherein the first protecting layer comprises oxygen, nitrogen, and at least one element selected from the group consisting of Al, Ga, In, and Si; wherein, close to the second semiconductor layer, the first protecting layer has a first oxygen atomic percentage and a first nitrogen atomic percentage, and the first oxygen atomic percentage is less than the first nitrogen atomic percentage.