# US 10,312,412 B2 · Group III nitride semiconductor luminescence element

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,312,412 B2
- Document ID: US10312412B2
- Status: Granted
- Kind: B2
- Application number: 15/555,098
- Filed: 2016-02-29
- Published: 2018-02-08
- Granted: 2019-06-04
- Earliest claimed: 2015-03-06
- Assignees: Stanley Electric Co., Ltd.
- Applicants: Stanley Electric Co., Ltd.
- Inventors: Toshiyuki Obata; Tomoaki Satou
- Web page: https://patentgrep.com/patent/US10312412B2

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/831: characterised by their shape
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A group III nitride semiconductor light emitting element includes an active layer between an n-type layer and a p-type layer, having an n-electrode on the n-type layer and a p-electrode on the p-type layer, and having a mesa structure containing the p-type layer. In a top view of the group III nitride semiconductor light emitting element, the distance between a portion of an end part of the mesa structure and the periphery of the p-electrode is ⅓ or more of a diffusion length Ls.

## Claims

### Claim 1

A group III nitride semiconductor luminescence element, comprising:
a substrate,
a n-type layer arranged on the substrate,
an active layer laminated on the n-type layer, and
a p-type layer laminated on the active layer,
wherein the active layer and the p-type layer are partially removed on the n-type layer to form an exposed face of the n-type layer and a mesa structure comprising remains of the active layer and the p-type layer,
wherein a p-electrode is provided on the p-type layer,
wherein a n-electrode is provided on at least a part of the exposed face of the n-type layer,
wherein from a top view of the group III nitride semiconductor luminescence element, the mesa structure has a projection part surrounded by the n-electrode, and
wherein at the projection part, the p-electrode is not formed within a range from an edge of the mesa structure to 1) less than ⅓ of a diffusion length Ls or 2) less than 12 μm.

### Claim 2 (depends on 1)

The group III nitride semiconductor luminescence element according to claim 1, wherein at the projection part, the p-electrode is not formed within a range from an edge of the mesa structure to less than ⅓ of a diffusion length Ls.

### Claim 3 (depends on 1)

The group III nitride semiconductor luminescence element according to claim 1, wherein at the projection part, the p-electrode is not formed within a range from an edge of the mesa structure to less than 12 μm.

### Claim 4 (depends on 1)

The group III nitride semiconductor luminescence element according to claim 1, wherein a luminescence peak wavelength is 200 to 350 nm.

### Claim 5 (depends on 1)

The group III nitride semiconductor luminescence element according to claim 1, wherein the substrate comprises SiC, AlN, or Si.

### Claim 6 (depends on 1)

The group III nitride semiconductor luminescence element according to claim 1, wherein the substrate comprises AlN.

### Claim 7 (depends on 1)

The group III nitride semiconductor luminescence element according to claim 1, wherein the n-type layer comprises AlxInyGazN, wherein x, y, and z are rational number satisfying 0<x≤1.0, 0≤y≤0.1, 0≤z<1.0, and x+y+z=1.0.

### Claim 8

A group III nitride semiconductor luminescence element, comprising:
a substrate;
a n-type layer on the substrate;
an active layer laminated on the n-type layer; and
a p-type layer laminated on the active layer,
wherein the active layer and the p-type layer are partially removed on the n-type layer to form an exposed face of the n-type layer, and an n-electrode is provided on at least a part of the exposed face,
wherein a p-electrode is provided on the p-type layer, and the p-electrode is recessed from an outer peripheral part of the p-type layer by less than ⅓ of a diffusion length Ls or less than 12 μm.

### Claim 9 (depends on 8)

The group III nitride semiconductor luminescence element according to claim 8, wherein the substrate comprises SiC, AlN, or Si.