# US 10,312,410 B2 · Ultra-wideband light emitting diode and optical detector comprising aluminum gallium arsenide and method of fabricating the same

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- Number: US 10,312,410 B2
- Document ID: US10312410B2
- Status: Granted
- Kind: B2
- Application number: 15/858,905
- Filed: 2017-12-29
- Published: 2018-09-13
- Granted: 2019-06-04
- Earliest claimed: 2016-02-09
- Assignees: Lumeova, Inc.
- Applicants: Lumeova, Inc.
- Inventors: Mohammad Ali Khatibzadeh; Arunesh Goswami
- Web page: https://patentgrep.com/patent/US10312410B2

## CPC

- H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H04B 10/11: Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
- H04B 10/1143: {Bidirectional transmission}
- H04B 10/1149: {Arrangements for indoor wireless networking of information}
- H04B 10/116: Visible light communication
- H04B 10/40: Transceivers
- H04B 10/502: {LED transmitters}
- H04B 10/60: Receivers
- H10F 55/25: wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/8162: {Current-blocking structures}
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H04H 20/71: Wireless systems
- H10H 20/823: comprising only Group II-VI materials, e.g. ZnO
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10W 90/00: Package configurations
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H04B: TRANSMISSION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H04H: BROADCAST COMMUNICATION (multiplex communication H04J; pictorial communication aspects of broadcast systems H04N)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Devices, systems, and methods for providing wireless personal area networks (PANs) and local area networks (LANs) using visible and near-visible optical spectrum. Various constructions and material selections are provided herein. According to one embodiment, a light-emitting diode (LED) includes a substrate, a carrier confinement (CC) region positioned over the substrate, an active region positioned over the CC region, and an electron blocking layer (EBL) positioned over the active region. The CC region includes a first CC layer comprising aluminum gallium arsenide and a second CC layer position over the first CC layer. The second CC layer and the electron blocking layer (EBL) also each include aluminum gallium arsenide. The active region is configured to have a transient response time of less than 500 picoseconds (ps).

## Claims

### Claim 1

A light-emitting diode (LED) comprising:
a substrate;
a carrier confinement (CC) region positioned over the substrate, the CC region defining:
a first CC layer comprising aluminum gallium arsenide; and
a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium arsenide;
an active region positioned over the CC region, the active region configured to have a transient response time between 1 and 500 picoseconds (ps);
a first barrier layer positioned between the CC region and the active region, and a second barrier layer positioned over the active region; and
an electron blocking layer (EBL) positioned over the active region, the EBL comprising aluminum gallium arsenide, wherein:
the active region comprises gallium arsenide;
the active region is at least one of a quantum well structure and a multi quantum well structure;
the first barrier layer has an aluminum composition between 25% and 45%; and
the LED is configured for at least one of emitting optical radiation through a process of spontaneous emission and emitting an optical radiation pattern with greater that one degree field of view.

### Claim 2 (depends on 1)

The LED of claim 1, wherein the active region has a thickness between 50 and 150 angstroms for each quantum well.

### Claim 3 (depends on 2)

The LED of claim 2, wherein the first barrier layer has a thickness between 25 and 75 angstroms.

### Claim 4 (depends on 3)

The LED of claim 3, further comprising:
an n-type contact layer positioned between the substrate and the CC region; and
a p-type contact layer positioned over the second barrier layer.

### Claim 5 (depends on 4)

The LED of claim 4, wherein the first CC layer has an aluminum composition between 25% and 45% and the second CC layer has an aluminum composition between 25% and 45%.

### Claim 6 (depends on 5)

The LED of claim 5, wherein the first CC layer has a thickness between 100 and 2000 angstroms and the second CC layer has a thickness between 25 and 75 angstroms.

### Claim 7 (depends on 6)

The LED of claim 6, wherein the EBL has an aluminum composition between 25% and 45%.

### Claim 8 (depends on 7)

The LED of claim 7, wherein the EBL has a thickness between 100 and 2000 angstroms.

### Claim 9 (depends on 6)

The LED of claim 6, wherein:
the n-type contact layer and the p-type contact layer each comprise gallium arsenide;
the n-type contact layer has a thickness between 5000 and 20000 angstroms; and
the p-type contact layer has a thickness between 500 and 5000 angstroms.

### Claim 10 (depends on 1)

The LED of claim 1, wherein the LED is implemented in a flip-chip package.

### Claim 11 (depends on 1)

The LED of claim 1, wherein the LED is implemented within an optical transceiver and the optical transceiver further comprises an optical detector.

### Claim 12 (depends on 1)

The LED of claim 1, wherein:
the LED is configured to transmit at a first wavelength;
the LED is a first LED within an array of LEDs; and
a second LED within the array of LEDs is configured to operate at a second wavelength.

### Claim 13 (depends on 12)

The LED of claim 12, wherein:
the array of LEDs is implemented within an optical transceiver;
the optical transceiver further comprises an array of optical detectors;
a first optical detector within the array of optical detectors is configured to receive at the first wavelength; and
a second optical detector within the array of optical detectors is configured to receive at the second wavelength.

### Claim 14 (depends on 12)

The LED of claim 12, wherein the LED is implemented in a flip-chip package.

### Claim 15 (depends on 13)

The LED of claim 13, wherein the LED is implemented in a flip-chip package.

### Claim 16 (depends on 1)

The LED of claim 1, wherein the LED is configured for variable wavelength modulation.

### Claim 17 (depends on 16)

The LED of claim 16, wherein the LED is implemented in a flip-chip package.

### Claim 18 (depends on 1)

The LED of claim 1, wherein the LED is implemented within an epitaxial structure and the epitaxial structure further comprises an optical detector.

### Claim 19 (depends on 13)

The LED of claim 13, wherein the first optical detector and the second optical detector are implemented within a first epitaxial structure.

### Claim 20

A method of forming a light-emitting diode (LED), comprising:
providing an epitaxial structure on a substrate, the epitaxial structure comprising:
a carrier confinement (CC) region positioned over the substrate, the CC region defining:
a first CC layer comprising aluminum gallium arsenide; and
a second CC layer positioned on the first CC layer, the second CC layer comprising aluminum gallium arsenide;
an active region positioned over the CC region, the active region configured to have a transient response time between 1 and 500 picoseconds (ps);
a first barrier layer positioned between the CC region and the active region, and a second barrier layer positioned over the active region; and
an electron blocking layer (EBL) positioned over the active region, the EBL comprising aluminum gallium arsenide, wherein:
the active region comprises gallium arsenide;
the active region is at least one of a quantum well structure and a multi quantum well structure;
the first barrier layer has an aluminum composition between 25% and 45%; and
the LED is configured for at least one of emitting optical radiation through a process of spontaneous emission and emitting an optical radiation pattern with greater that one degree field of view.