# US 10,312,404 B2 · Semiconductor light emitting device growing active layer on textured surface

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- Number: US 10,312,404 B2
- Document ID: US10312404B2
- Status: Granted
- Kind: B2
- Application number: 15/897,564
- Filed: 2018-02-15
- Published: 2018-06-21
- Granted: 2019-06-04
- Earliest claimed: 2006-12-22
- Assignees: Lumileds LLC
- Applicants: Lumileds LLC
- Inventors: Sungsoo Yi; Nathan F. Gardner; Michael R. Krames; Linda T. Romano
- Web page: https://patentgrep.com/patent/US10312404B2

## CPC

- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
- H10H 20/815: having stress relaxation structures, e.g. buffer layers
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.

## Claims

### Claim 1

A device comprising:
a III-nitride semiconductor structure comprising:
an n-type layer comprising a textured surface having a cross sectional profile of peaks alternating with valleys;
a light emitting layer with at least partial strain relief grown over the textured surface, the light emitting layer with at least partial strain relief comprising islands formed on the peaks, the islands expanding laterally to provide the at least partial strain relief.

### Claim 2 (depends on 1)

The device of claim 1 wherein the light emitting layer is grown on the textured surface.

### Claim 3 (depends on 1)

The device of claim 1 wherein the n-type layer comprising a textured surface is a first n-type layer, the III-nitride semiconductor structure further comprising a second n-type layer with at least partial strain relief grown on the textured surface, wherein the light emitting layer is grown on the second n-type layer.

### Claim 4 (depends on 1)

The device of claim 1 wherein the distance between adjacent peaks is between 50 nm and 200 nm.

### Claim 5

A device comprising:
a III-nitride semiconductor structure comprising:
an n-type layer including a textured surface, the textured surface having a cross sectional profile of peaks alternating with valleys;
an InGaN light emitting layer with at least partial strain relief, the light emitting layer being disposed over the textured surface within 1000 angstroms of the textured surface, the material of the light emitting layer having a bulk lattice constant abulk corresponding to a lattice constant of a free standing material of the light emitting layer, the light emitting layer emitting light between 430 nm and 520 nm, the light emitting layer having an in-plane lattice constant ain-plane corresponding to a lattice constant of the light emitting layer as grown in the structure, and (ain-plane−abulk)/abulk is less than 1%; and
a p-type region disposed over the light emitting layer.