# US 10,312,396 B2 · Method of manufacturing back surface junction type solar cell

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- Number: US 10,312,396 B2
- Document ID: US10312396B2
- Status: Granted
- Kind: B2
- Application number: 15/938,864
- Filed: 2018-03-28
- Published: 2018-08-02
- Granted: 2019-06-04
- Earliest claimed: 2015-09-30
- Assignees: Panasonic Intellectual Property Management Co., Ltd.
- Applicants: Panasonic Intellectual Property Management Co., Ltd.
- Inventors: Keiichiro Masuko; Yasufumi Tsunomura
- Web page: https://patentgrep.com/patent/US10312396B2

## CPC

- H10F 10/146: {Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side}
- H10F 10/166: the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/134: {Irradiation with electromagnetic or particle radiation}
- H10F 77/20: Electrodes
- H10F 77/219: {Arrangements for electrodes of back-contact photovoltaic cells}
- Y02E 10/50: Photovoltaic [PV] energy
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A method of manufacturing a solar cell includes: forming a conductive thin film layer on a semiconductor substrate; forming an insulating film on the conductive thin film layer; forming a conductive thin film layer exposed portion by removing a part of the insulating film; forming a plating film in the conductive thin film layer exposed portion; and removing the insulating film and the conductive thin film layer in an area not overlapping the plating film, wherein the plating film formed in the forming of a plating film is formed to cover the insulating film.

## Claims

### Claim 1

A method of manufacturing a solar cell, comprising:
forming a conductive thin film layer on a semiconductor substrate, wherein the conductive thin film layer includes at least one of a metal thin film layer and a transparent conductive oxide film layer;
forming an insulating film on the conductive thin film layer;
forming a conductive thin film layer exposed portion by removing a part of the insulating film;
forming a plating film in the conductive thin film layer exposed portion; and
removing the insulating film and the conductive thin film layer in an area not overlapping the plating film, wherein
the plating film formed in the forming of a plating film is formed to cover the insulating film.

### Claim 2 (depends on 1)

The method of manufacturing a solar cell according to claim 1, wherein
laser is used in the removing of the insulating film.

### Claim 3 (depends on 1)

The method of manufacturing a solar cell according to claim 1, wherein
laser is used in the forming of a conductive thin film layer exposed portion by removing a part of the insulating film.

### Claim 4 (depends on 1)

The method of manufacturing a solar cell according to claim 1, wherein
wet etching is used in the removing of the insulating film.

### Claim 5 (depends on 1)

The method of manufacturing a solar cell according to claim 1, wherein
the semiconductor substrate includes a photoelectric conversion layer formed of amorphous silicon containing hydrogen.