# US 10,312,392 B2 · Multi-junction solar cell for space applications

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,312,392 B2
- Document ID: US10312392B2
- Status: Granted
- Kind: B2
- Application number: 13/073,663
- Filed: 2011-03-28
- Published: 2011-09-29
- Granted: 2019-06-04
- Earliest claimed: 2010-03-29
- Assignees: Airbus Defence and Space GmbH
- Applicants: Christel Noemayr; Claus Zimmermann
- Inventors: Christel Noemayr; Claus Zimmermann
- Web page: https://patentgrep.com/patent/US10312392B2

## CPC

- H10F 19/80: Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
- H10F 10/161: comprising multiple PN heterojunctions, e.g. tandem cells
- H10F 77/80: Arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation, e.g. for space applications
- H10F 10/142: comprising multiple PN homojunctions, e.g. tandem cells
- H10F 10/16: Photovoltaic cells having only PN heterojunction potential barriers
- H10F 10/163: comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells
- H10F 10/164: comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F 19/75: the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate
- H10F 19/804: {Materials of encapsulations}
- H10F 77/211: {for photovoltaic cells}
- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- Y02E 10/50: Photovoltaic [PV] energy
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A multi-junction solar cell includes a first main surface and a second main surface opposite to the first main surface of a semiconductor body. A topmost pn-junction of a plurality of pn-junctions stacked on top of each other adjoins to the first main surface. A cell edge of the semiconductor body defines a shape of the first and the second main surfaces. An encapsulant on the first main surface provides an environmental protection of the semiconductor body. A mesa groove is provided on the first main surface and penetrates at least the topmost pn-junction. The mesa groove is located adjacent to the cell edge and is created around the circumference of the semiconductor body for providing an inner cell area and a mesa wall, the mesa wall being created between the mesa groove and the cell edge. The mesa groove is filled with the encapsulant.

## Claims

### Claim 1

A multi junction solar cell, comprising:
a first main surface and a second main surface opposite to the first main surface of a semiconductor body, wherein a topmost pn-junction of a plurality of pn-junctions stacked on top of each other adjoins to the first main surface;
a cell edge of the semiconductor body defining a shape of the first and the second main surfaces;
an encapsulant arranged on the first main surface to protect the semiconductor body from an environment;
a mesa groove arranged on the first main surface, wherein the mesa groove is filled with the encapsulant, and
a coverglass is located on the encapsulant to seal the solar cell and the mesa groove on the first main surface,
wherein the mesa groove is located adjacent to the cell edge to provide an inner cell area and a mesa wall,
wherein a conductive or antistatic material that provides an electrical shunt path is applied on the cell edge which extends between a back side of the solar cell and a front side of the solar cell, the back side being provided by the second main surface and the front side being provided by the coverglass, thereby at least directly contacting the coverglass, the encapsulant, and the mesa wall.

### Claim 2 (depends on 1)

The solar cell according to claim 1, wherein the mesa wall is, at each depth of the mesa groove, mechanically attached to the inner cell area.

### Claim 3 (depends on 1)

The solar cell according to claim 1, wherein a width of the mesa groove is dependent on a viscosity of a material of the encapsulant.

### Claim 4 (depends on 1)

The solar cell according to claim 1, wherein a width of the mesa wall is selected to block UV radiation from a side when the solar cell is operated under inclined conditions.

### Claim 5 (depends on 1)

The solar cell according to claim 1, wherein a material of the encapsulant is non-conductive.

### Claim 6 (depends on 1)

The solar cell according to claim 1, wherein a contact grid is arranged on the first main surface of the semiconductor body only within the inner cell area.

### Claim 7 (depends on 6)

The solar cell according to claim 6, wherein a non-conductive antireflection coating is arranged on the inner cell area covering the contact grid and on the top of the mesa wall.

### Claim 8 (depends on 1)

The solar cell according to claim 1, wherein the coverglass comprises an UV blocking filter for preventing photodegradation of the encapsulant within the groove.

### Claim 9 (depends on 1)

The solar cell according to claim 1, wherein a width of the mesa wall is selected based on an expected angle of incidence of UV radiation.

### Claim 10 (depends on 1)

The solar cell according to claim 1, wherein the cell edge is coated with a non UV transparent material around the entire cell circumference.

### Claim 11 (depends on 1)

The solar cell according to claim 1, wherein the conductive or antistatic material is applied at only one position at the cell edge.

### Claim 12 (depends on 1)

The solar cell according to claim 1, further comprising:
an additional mesa groove located between the mesa wall and the cell edge, wherein the mesa wall forms one side of the additional mesa groove and an opposing side of the additional mesa groove is exposed.

### Claim 13 (depends on 12)

The solar cell according to claim 12, wherein a depth of the mesa groove is 10 to 20 μm and a depth of the additional mesa groove is approximately 10 μm.

### Claim 14 (depends on 1)

The solar cell according to claim 1, wherein all pn-junctions of the plurality of pn-junctions are penetrated by the mesa groove so that the mesa wall is electrically isolated from the inner cell area.

### Claim 15 (depends on 1)

The solar cell according to claim 1, wherein the second main surface is a semiconductor material that forms part of a bottommost pn-junction and forms a contiguous common base of the inner cell area and the mesa wall.

### Claim 16 (depends on 1)

The solar cell according to claim 1, wherein the mesa groove completely surrounds a circumference of the semiconductor body.

### Claim 17 (depends on 1)

The solar cell according to claim 1, wherein the mesa wall completely surrounds a circumference of the inner cell area.

### Claim 18 (depends on 1)

The solar cell according to claim 1, wherein the conductive or antistatic material comprises a conductive or antistatic coating or paint or film.