# US 10,312,390 B2 · Light receiving device and method of producing light receiving device

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- Number: US 10,312,390 B2
- Document ID: US10312390B2
- Status: Granted
- Kind: B2
- Application number: 15/935,848
- Filed: 2018-03-26
- Published: 2018-11-29
- Granted: 2019-06-04
- Earliest claimed: 2018-03-26
- Assignees: Sumitomo Electric Industries, Ltd.
- Applicants: Sumitomo Electric Industries, Ltd.
- Inventors: Sundararajan Balasekaran; Daisuke Kimura
- Web page: https://patentgrep.com/patent/US10312390B2

## CPC

- H10F 77/146: {Superlattices; Multiple quantum well structures}
- H10F 30/222: the potential barrier being a PN heterojunction
- H10F 30/223: the potential barrier being a PIN barrier
- H10F 39/021: {of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP}
- H10F 39/184: {Infrared image sensors}
- H10F 39/811: {Interconnections}
- H10F 71/127: {The active layers comprising only Group III-V materials, e.g. GaAs or InP}
- H10F 71/139: {using temporary substrates}
- H10F 71/1395: {for thin-film devices}
- H10F 77/124: comprising only Group III-V materials, e.g. GaAs
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- H10F 77/147: {Shapes of bodies}
- H10F 77/206: {for devices having potential barriers}
- H10F 71/1272: {comprising at least three elements, e.g. GaAlAs or InGaAsP}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A light receiving device includes a substrate having a principal surface and a back surface including a light receiving surface; a metal wire disposed on the principal surface, the metal wire including a bonding portion having an opening; and photodiodes that is arranged in an array on the substrate, each of the photodiodes including an electrode connected to the bonding portion of the metal wire and a semiconductor mesa including a stacked semiconductor layer, the stacked semiconductor layer including a first semiconductor layer disposed on the substrate, an optical absorption layer including a type-II superlattice structure, and a second semiconductor layer. Each of the electrodes of the photodiodes is disposed on a side surface of the semiconductor mesa in contact with the first semiconductor layer. The first semiconductor layer faces to the light receiving surface through the opening of the bonding portion.

## Claims

### Claim 1

A light receiving device comprising:
a substrate having a principal surface and a back surface opposite to the principal surface, the back surface including a light receiving surface;
a metal wire disposed on the principal surface of the substrate, the metal wire including a bonding portion having an opening; and
a plurality of photodiodes that is arranged in an array on the substrate, each of the photodiodes including an electrode connected to the bonding portion of the metal wire and a semiconductor mesa including a stacked semiconductor layer, the stacked semiconductor layer including a first semiconductor layer disposed on the substrate, an optical absorption layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the optical absorption layer, the first semiconductor layer including a first conductivity-type III-V group compound semiconductor, the optical absorption layer including a type-II superlattice structure, the second semiconductor layer including a second conductivity-type III-V group compound semiconductor,
wherein each of the electrodes of the photodiodes is disposed on a surface of the first semiconductor layer that faces to the light receiving surface of the substrate through the opening of the bonding portion,
the electrode is in contact with the first semiconductor layer at the surface of the first semiconductor layer,
the electrode has an opening, and
the surface of the first semiconductor layer is exposed through the opening of the electrode.

### Claim 2 (depends on 1)

The light receiving device according to claim 1, further comprising a filler provided in the opening of the bonding portion.

### Claim 3 (depends on 1)

The light receiving device according to claim 1, wherein the electrodes of the photodiodes is disposed on an outer peripheral part of the surface of the first semiconductor layer, and
the electrodes of the photodiodes have a frame-like planar shape or a doughnut-like planar shape.