# US 10,312,388 B2 · Method and optoelectronic structure providing polysilicon photonic devices with different optical properties in different regions

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- Number: US 10,312,388 B2
- Document ID: US10312388B2
- Status: Granted
- Kind: B2
- Application number: 15/679,028
- Filed: 2017-08-16
- Published: 2017-12-21
- Granted: 2019-06-04
- Earliest claimed: 2014-08-25
- Assignees: Micron Technology, Inc.; Massachusetts Institute of Technology
- Applicants: Micron Technology, Inc.; Massachusetts Institute of Technology
- Inventors: Roy Meade; Karan Mehta; Efraim Megged; Jason Orcutt; Milos Popovic; Rajeev Ram; Jeffrey Shainline; Zvi Sternberg; Vladimir Stojanovic; Ofer Tehar-Zahav
- Web page: https://patentgrep.com/patent/US10312388B2

## CPC

- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/1221: {comprising polycrystalline silicon}
- H10F 77/1642: {including only Group IV materials}
- Y02E 10/546: Polycrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure.

## Claims

### Claim 1

A method of forming an integrated structure, the method comprising:
forming an optical isolation region in a substrate;
forming a first polysilicon material over the substrate and optical isolation region;
removing a portion of the first polysilicon material in a region which is over and vertically aligned with the optical isolation region;
forming a second polysilicon material in the region over and vertically aligned with the optical isolation region; and
patterning the first and second polysilicon materials to create a first photonic device and a gate of at least one transistor from the first polysilicon material, and a waveguide core from the second polysilicon material,
wherein the second polysilicon material is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.

### Claim 2 (depends on 1)

A method of forming an integrated structure as in claim 1, wherein the first and second polysilicon materials have different optical transmission properties.

### Claim 3 (depends on 1)

A method of forming an integrated structure as in claim 1, wherein the first and second polysilicon materials reside on a common physical layer of the integrated structure.

### Claim 4 (depends on 1)

A method of forming an integrated structure as in claim 1, wherein the first photonic device comprises a defect state photodetector.

### Claim 5 (depends on 1)

A method of forming an integrated structure as in claim 1, wherein the second polysilicon material comprises an amorphized and recrystallized polysilicon material.

### Claim 6 (depends on 1)

A method of forming an integrated structure as in claim 1, further comprising forming a nitride material over the waveguide core, but not over the first photonic device.

### Claim 7 (depends on 1)

A method of forming an integrated structure as in claim 1, wherein forming the second polysilicon material comprises:
forming an amorphous silicon in the first polysilicon material in a region over the optical isolation region; and
annealing the amorphous silicon to convert the amorphous silicon to a polysilicon material.

### Claim 8

A method of forming an integrated structure, the method comprising:
forming an optical isolation region in a substrate;
forming a first polysilicon material over the substrate, including over a region above and vertically aligned with an optical isolation region;
implanting the region of the first polysilicon material above and vertically aligned with the optical isolation region with silicon to create an amorphous silicon region;
annealing the implanted region to create a second polysilicon material; and
patterning the first and second polysilicon materials to create a first photonic device and a gate of at least one transistor from the first polysilicon material, and a waveguide core from the second polysilicon material,
wherein the second polysilicon material is coplanar with the first polysilicon material and has different optical properties from the first polysilicon material.