# US 10,312,384 B2 · Solar cell

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- Number: US 10,312,384 B2
- Document ID: US10312384B2
- Status: Granted
- Kind: B2
- Application number: 15/351,455
- Filed: 2016-11-15
- Published: 2018-04-26
- Granted: 2019-06-04
- Earliest claimed: 2016-10-26
- Assignees: Industrial Technology Research Institute
- Applicants: Industrial Technology Research Institute
- Inventors: Chao-Cheng Lin; Chien-Kai Peng; Chen-Cheng Lin; Chen-Hsun Du; Chorng-Jye Huang; Chun-Ming Yeh
- Web page: https://patentgrep.com/patent/US10312384B2

## CPC

- H10F 77/215: {Geometries of grid contacts}
- H10F 10/166: the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 77/122: comprising only Group IV materials
- H10F 77/211: {for photovoltaic cells}
- H10F 77/244: {made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers}
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A solar cell is provided. The solar cell includes a Si substrate having a first surface and a second surface opposite to each other, an emitter, a first electrode, a doped region, a passivation layer, a doped polysilicon layer, a semiconductor layer, and a second electrode. The emitter is disposed on the first surface. The first electrode is disposed on the emitter. The doped region is disposed in the second surface. The passivation layer is disposed on the second surface. The doped polysilicon layer is disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface. The semiconductor layer is disposed on the doped polysilicon layer and in the holes. The band gap of the semiconductor layer is greater than that of the Si substrate. The second electrode is disposed on the semiconductor layer.

## Claims

### Claim 1

A solar cell, comprising:
a silicon substrate having a first surface and a second surface opposite to each other;
an emitter disposed on the first surface;
a first electrode disposed on the emitter;
a doped region disposed in the second surface;
a passivation layer disposed on the second surface;
a doped polysilicon layer disposed on the passivation layer, wherein a plurality of holes penetrates the doped polysilicon layer and the passivation layer and exposes a portion of the second surface;
a semiconductor layer disposed on the doped polysilicon layer and in the holes, wherein a band gap of the semiconductor layer is greater than a band gap of the silicon substrate, and a material of the semiconductor layer is doped silicon carbide; and
a second electrode disposed on the semiconductor layer.

### Claim 2 (depends on 1)

The solar cell of claim 1, wherein a thickness of the semiconductor layer is between 5 nm and 50 nm.

### Claim 3 (depends on 1)

The solar cell of claim 1, further comprising a transparent conductive layer disposed between the first electrode and the emitter.

### Claim 4 (depends on 1)

The solar cell of claim 1, further comprising a transparent conductive layer disposed between the second electrode and the semiconductor layer.

### Claim 5 (depends on 1)

The solar cell of claim 1, wherein a pore size of the holes does not exceed 200 μm.