# US 10,312,379 B2 · High voltage device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,379 B2 - Document ID: US10312379B2 - Status: Granted - Kind: B2 - Application number: 15/660,982 - Filed: 2017-07-27 - Published: 2019-01-03 - Granted: 2019-06-04 - Earliest claimed: 2017-06-28 - Assignees: United Microelectronics Corp. - Applicants: United Microelectronics Corp. - Inventors: Shih-Yin Hsiao; Kai-Kuen Chang; Ching-Chung Yang - Web page: https://patentgrep.com/patent/US10312379B2 ## CPC - H10D 8/60: Schottky-barrier diodes - H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions} - H10D 62/115: {Dielectric isolations, e.g. air gaps} - H10D 62/126: {Top-view geometrical layouts of the regions or the junctions} - H10D 64/111: {Field plates} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A high voltage device includes a semiconductor substrate, an ion well, a Schottky diode in the ion well, an isolation structure in the ion well surrounding the Schottky diode, and an assistant gate surrounding the Schottky diode. The assistant gate is disposed only on the isolation structure and is not in direct contact with the ion well. ## Claims ### Claim 1 A high voltage device, comprising: a semiconductor substrate having a first conductivity type; a first ion well having a second conductivity type; a Schottky diode disposed in the first ion well; an isolation structure in the first ion well and surrounding the Schottky diode; and an assistant gate disposed only on the isolation structure and surrounding the Schottky diode, wherein the assistant gate is electrically connected to the Schottky diode by the assistant gate connected to a first contact element, the first contact element connected to an interconnection, the interconnection connected to a second contact element, and the second contact element connected to the Schottky diode. ### Claim 2 (depends on 1) The high voltage device according to claim 1, wherein the Schottky diode comprises a silicide layer in direct contact with the first ion well. ### Claim 3 (depends on 1) The high voltage device according to claim 1 further comprising a second ion well having the first conductivity type in the first ion well, wherein the second ion well is disposed along an inner side of the isolation structure and surrounds the Schottky diode, and wherein the second ion well overlaps with an inner portion of the isolation structure, and wherein the second ion well is disposed in between the Schottky diode and the assistant gate. ### Claim 4 (depends on 3) The high voltage device according to claim 3 further comprising a salicide block (SAB) layer disposed on the second ion well and surrounding the Schottky diode, wherein the SAB layer extends to above the inner portion of the isolation structure. ### Claim 5 (depends on 4) The high voltage device according to claim 4 further comprising a first heavily doped region having the first conductivity type and disposed between the Schottky diode and the isolation structure, wherein part of the first heavily doped region is disposed within the second ion well and part of the first heavily doped region is disposed within the first ion well. ### Claim 6 (depends on 1) The high voltage device according to claim 1 further comprising a cathode disposed in the first ion well, wherein the cathode is disposed on an outer side of the isolation structure and surrounds an outer portion of the isolation structure. ### Claim 7 (depends on 6) The high voltage device according to claim 6, wherein the outer portion of the isolation structure has a thickness that is smaller than that of the inner portion of the isolation structure. ### Claim 8 (depends on 6) The high voltage device according to claim 6, wherein the assistant gate is only in direct contact with the outer portion of the isolation structure. ### Claim 9 (depends on 6) The high voltage device according to claim 6, wherein the assistant gate comprises a first portion above a surface of the outer portion of the isolation structure and a second portion embedded into the outer portion of the isolation structure. ### Claim 10 (depends on 1) The high voltage device according to claim 1, wherein the first conductivity type is P type and the second conductivity type is N type. ### Claim 11 (depends on 1) The high voltage device according to claim 1, wherein the assistant gate comprises polysilicon. ### Claim 12 (depends on 1) The high voltage device according to claim 1, wherein the semiconductor substrate comprises a silicon substrate, an epitaxial semiconductor substrate or a silicon-on-insulator (SOI) substrate. ### Claim 13 (depends on 4) The high voltage device according to claim 4, wherein the assistant gate is not in direct contact with the SAB layer. ### Claim 14 A layout structure of a high voltage device, comprising: a semiconductor substrate having a first conductivity type; a first ion well having a second conductivity type; a Schottky diode disposed in the first ion well; an annular isolation structure in the first ion well and surrounding the Schottky diode; and an annular assistant gate disposed only on the annular isolation structure and surrounding the Schottky diode, wherein the annular assistant gate is electrically connected to the Schottky diode. ### Claim 15 (depends on 14) The layout structure of a high voltage device according to claim 14 further comprising an annular second ion well having the first conductivity type in the first ion well, wherein the annular second ion well is disposed along an inner side of the annular isolation structure and surrounds the Schottky diode, wherein the annular second ion well overlaps with an inner portion of the isolation structure. ### Claim 16 (depends on 15) The layout structure of a high voltage device according to claim 15 further comprising an annular salicide block (SAB) layer disposed on the annular second ion well and surrounding the Schottky diode, wherein the annular SAB layer extends to above the inner portion of the isolation structure. ### Claim 17 (depends on 15) The layout structure of a high voltage device according to claim 15, wherein the isolation structure further comprises an outer portion, wherein the annular assistant gate is disposed on the outer portion. ### Claim 18 (depends on 17) The layout structure of a high voltage device according to claim 17, wherein the outer portion of the isolation structure has a thickness that is smaller than that of the inner portion of the isolation structure.