# US 10,312,343 B2 · Device and device manufacturing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,343 B2 - Document ID: US10312343B2 - Status: Granted - Kind: B2 - Application number: 15/220,348 - Filed: 2016-07-26 - Published: 2017-03-16 - Granted: 2019-06-04 - Earliest claimed: 2015-09-16 - Assignees: Fuji Electric Co., Ltd. - Applicants: Fuji Electric Co., Ltd. - Inventors: Shigemi Miyazawa - Web page: https://patentgrep.com/patent/US10312343B2 ## CPC - H10D 8/022: {of Zener diodes} - H10D 8/25: Zener diodes - H10D 12/032: {of vertical IGBTs} - H10D 12/441: {Vertical IGBTs} - H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions} - H10D 62/112: {for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers} - H10D 62/124: {Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions} - H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A device includes a vertical semiconductor switch including (i) a gate terminal and a first terminal provided on a substrate and (ii) a second terminal provided on the substrate, where the vertical semiconductor switch is configured to electrically connect or disconnect the first terminal and the second terminal, a first insulative film provided on the substrate, a second insulative film provided on the substrate, where the second insulative film is in contact with the first insulative film and thinner than the first insulative film, and a zener diode formed on the first insulative film and the second insulative film, where the zener diode includes a first portion that is formed on the first insulative film and connected to the first surface of the substrate and a second portion that is formed on the second insulative film and connected to the gate terminal. ## Claims ### Claim 1 A device comprising: a vertical semiconductor switch including (i) a gate terminal and a first terminal provided on a first surface of a substrate and (ii) a second terminal provided on a second surface of the substrate, the vertical semiconductor switch being configured to electrically connect or disconnect the first terminal and the second terminal; a first insulative film provided on the first surface of the substrate; a second insulative film provided on the first surface of the substrate, the second insulative film being in contact with the first insulative film and being entirely thinner than the first insulative film; and a zener diode formed on the first insulative film and the second insulative film, the zener diode including a first portion that is formed on the first insulative film and connected to the first surface of the substrate and a second portion that is formed on the second insulative film and connected to the gate terminal, wherein the first portion includes alternating p-type regions and n-type regions directly on the first insulative film and the second portion includes alternating p-type regions and n-type regions directly on the second insulative film, and the first portion of the zener diode is positioned more distant from a first well region to which the first terminal is connected than the second portion of the zener diode is. ### Claim 2 (depends on 1) The device of claim 1, wherein a breakdown voltage of the second portion of the zener diode is higher than a difference between a voltage applied to the second terminal to turn off the vertical semiconductor switch and a threshold voltage of the vertical semiconductor switch. ### Claim 3 (depends on 1) The device of claim 1, wherein at a boundary portion between the first insulative film and the second insulative film, an end portion of the first portion of the zener diode and an end portion of the second portion of the zener diode are made of semiconductors of a same conductivity type. ### Claim 4 (depends on 1) The device of claim 1, comprising a second well region that is formed in the substrate on the first surface side thereof and positioned directly under the second insulative film, the second well region having a same conductivity type as a first well region to which the first terminal is connected, the second well region being insulated from the first well region. ### Claim 5 (depends on 1) The device of claim 1, wherein the first portion of the zener diode is connected to the first surface of the substrate at a peripheral portion of the device and extends toward a central portion of the device. ### Claim 6 (depends on 1) The device of claim 1, wherein the first portion of the zener diode is connected to a third well region, and the third well region is formed in the substrate on the first surface side thereof and electrically connected to the second terminal. ### Claim 7 (depends on 1) The device of claim 1, wherein the vertical semiconductor switch is an insulated gate bipolar transistor (IGBT). ### Claim 8 A device comprising: a vertical semiconductor switch including (i) a gate terminal and a first terminal provided on a first surface of a substrate and (ii) a second terminal provided on a second surface of the substrate, the vertical semiconductor switch being configured to electrically connect or disconnect the first terminal and the second terminal; a first insulative film provided on the first surface of the substrate; a second insulative film provided on the first surface of the substrate, the second insulative film being in contact with the first insulative film and being entirely thinner than the first insulative film; and a zener diode formed on the first insulative film and the second insulative film, the zener diode including a first portion that is formed on the first insulative film and connected to the first surface of the substrate and a second portion that is formed on the second insulative film and connected to the gate terminal, wherein the first portion includes alternating p-type regions and n-type regions directly on the first insulative film and the second portion includes alternating p-type regions and n-type regions directly on the second insulative film, and the second portion of the zener diode is shorter than the first portion of the zener diode. ### Claim 9 A device manufacturing method comprising: forming a first insulative film on a first surface of a substrate; forming a second insulative film on the first surface of the substrate, the second insulative film being entirely thinner than the first insulative film and in contact with the first insulative film; forming a vertical semiconductor switch including a first terminal provided on the first surface of the substrate and a second terminal provided on a second surface of the substrate, the vertical semiconductor switch being configured to electrically connect or disconnect the first terminal and the second terminal; forming a zener diode on the first insulative film and the second insulative film, the zener diode including a first portion provided on the first insulative film and connected to the first surface of the substrate and a second portion provided on the second insulative film and connected to a gate terminal of the vertical semiconductor switch, the first portion of the zener diode positioned more distant from a first well region to which the first terminal is connected than the second portion of the zener diode is, wherein forming the zener diode includes alternately implanting a p-type material and an n-type material into the first portion directly on the first insulative film and alternately implanting a p-type material and an n-type material into the second portion directly on the second insulative film.