# US 10,312,334 B2 · Hybrid doping profile > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,334 B2 - Document ID: US10312334B2 - Status: Granted - Kind: B2 - Application number: 15/141,951 - Filed: 2016-04-29 - Published: 2017-11-02 - Granted: 2019-06-04 - Earliest claimed: 2016-04-29 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Henry Kwong; Chih-Yung Lin; Po-Nien Chen; Chen Hua Tsai - Web page: https://patentgrep.com/patent/US10312334B2 ## CPC - H10D 30/6219: {characterised by the source or drain electrodes} - H10D 30/024: {of fin field-effect transistors [FinFET]} - H10D 30/62: Fin field-effect transistors [FinFET] - H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)} - H10D 62/299: {having lateral doping variations (IGFETs having lightly doped source or drain extensions H10D30/601)} - H10P 30/204: {into Group IV semiconductors} - H10P 30/21: {of electrically active species} - H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device having a hybrid doping distribution and a method of fabricating the semiconductor device are presented. The semiconductor device includes a gate disposed over an active semiconducting region and a first S/D region and a second S/D region each aligned to opposing sides of the gate side walls. The active semiconducting region has a doping profile that includes a first doping region at a first depth beneath the gate and having a first dopant concentration. The doping profile includes a second doping region at a second depth beneath the gate greater than the first depth and having a second dopant concentration less than the first dopant concentration. ## Claims ### Claim 1 A semiconductor device, comprising: a gate disposed over an active semiconducting region; and a first source/drain (S/D) region and a second S/D region each aligned with opposing side walls of the gate, wherein the gate has a length between 3 nanometers and 30 nanometers between the first S/D region and the second S/D region; wherein the active semiconducting region comprises: a doping distribution comprising a first doping region, at a first depth beneath the gate and having a first dopant concentration between 1×1021 atoms/cm3 and 5×1021 atoms/cm3, and a second doping region at a second depth beneath the gate greater than the first depth and having a second dopant concentration between 1×1020 atoms/cm3 and 5×1020 atoms/cm3, wherein the first doping region and the second doping region having a same dopant type; and a doping profile across a plane perpendicular to a bottom surface of the gate, the doping profile comprising first and second peak dopant concentrations, wherein the first peak dopant concentration is greater in magnitude and closer to the bottom surface of the gate than the second peak dopant concentration. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the first depth is between 15 nanometers and 18 nanometers. ### Claim 3 (depends on 1) The semiconductor device of claim 1, wherein the second depth is between 30 nanometers and 35 nanometers. ### Claim 4 (depends on 1) The semiconductor device of claim 1, wherein the second doping region extends into the active region at an angle between 15 and 25 degrees with respect to a sidewall of the gate. ### Claim 5 A method of doping a semiconductor device, comprising: doping a first portion of an active region beneath a gate of the semiconductor device at a first energy and a first dopant dosage to create a first region at a first depth beneath the gate, wherein the doping the first portion comprises forming a first doping profile, across a plane in the active region, having a first peak dopant concentration, wherein the gate has a gate length between 3 nanometers and 30 nanometers, and wherein the first region has a dopant concentration between 1×1021 atoms/cm3 and 5×1021 atoms/cm3; and doping, by an ion implantation process, a second portion of the active region beneath the gate of the semiconductor device at a second energy greater than the first energy and a second dopant dosage to create a second region at a second depth beneath the gate greater than the first depth, wherein the doping the second portion comprises forming a second doping profile, across the plane in the active region, having a second peak dopant concentration, the first peak dopant concentration being greater in magnitude than the second peak dopant concentration, wherein the second region has a dopant concentration between 1×1020 atoms/cm3 and 5×1020 atoms/cm3, and wherein the first region and the second region comprise a same dopant type. ### Claim 6 (depends on 5) The method of claim 5, wherein the first energy is between 7 keV and 13 keV. ### Claim 7 (depends on 5) The method of claim 5, wherein the second energy is between 20 keV and 25 keV. ### Claim 8 (depends on 5) The method of claim 5, wherein the first depth is between 15 nanometers and 18 nanometers. ### Claim 9 (depends on 5) The method of claim 5, wherein the second depth is between 30 nanometers and 35 nanometers. ### Claim 10 (depends on 5) The method of claim 5, wherein the first dopant dosage is between 2×1015 atoms/cm2 and 3×1015 atoms/cm2. ### Claim 11 (depends on 5) The method of claim 5, wherein the second dopant dosage is between 1×1014 atoms/cm2 and 5×1014 atoms/cm2. ### Claim 12 (depends on 5) The method of claim 5, wherein the semiconducting device is a finFET. ### Claim 13 A method of fabricating a semiconductor device, comprising: etching a substrate to form a fin; patterning a blanket gate layer to form a gate over the fin, wherein the gate has a gate length between 3 nanometers and 30 nanometers; doping a first portion of the fin beneath the gate at a first energy and a first dopant dosage to create a first region at a first depth beneath the gate, wherein the doping the first portion comprises forming a first doping profile, across a plane in the active region, having a first peak dopant concentration, wherein the first region has a dopant concentration between 1×1021 atoms/cm3 and 5×1021 atoms/cm3; and doping, by an ion implantation process, a second portion of the fin beneath the gate at a second energy greater than the first energy and a second dopant dosage to create a second region at a second depth beneath the gate greater than the first depth, wherein the doping the second portion comprises forming a second doping profile, across the plane in the active region, having a second peak dopant concentration, the first peak dopant concentration being greater in magnitude than the second peak dopant concentration, wherein the second region has a dopant concentration between 1×1020 atoms/cm3 and 5×1020 atoms/cm3, and wherein the first region and the second region comprise a same dopant type. ### Claim 14 (depends on 13) The method of claim 13, wherein the first energy is between 7 keV and 13 keV. ### Claim 15 (depends on 13) The method of claim 13, wherein the second energy is between 20 keV and 25 keV. ### Claim 16 (depends on 13) The method of claim 13, wherein the first depth is between 15 nanometers and 18 nanometers. ### Claim 17 (depends on 13) The method of claim 13, wherein the second depth is between 30 nanometers and 35 nanometers.