# US 10,312,293 B2 · Organic light-emitting diode, display panel and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,293 B2 - Document ID: US10312293B2 - Status: Granted - Kind: B2 - Application number: 15/890,985 - Filed: 2018-02-07 - Published: 2018-06-14 - Granted: 2019-06-04 - Earliest claimed: 2017-07-28 - Assignees: Shanghai Tianma Am-Oled Co., Ltd. - Applicants: Shanghai Tianma Am-Oled Co., Ltd. - Inventors: Huihui Ma; Xiangcheng Wang; Yuji Hamada; Jinghua Niu - Web page: https://patentgrep.com/patent/US10312293B2 ## CPC - H10K 50/131: {with spacer layers between the electroluminescent layers} - G09G 3/3258: with pixel circuitry controlling the voltage across the light-emitting element - H10K 50/16: Electron transporting layers - H10K 50/19: Tandem OLEDs - H10K 59/32: Stacked devices having two or more layers, each emitting at different wavelengths - H10K 85/00: Organic materials used in the body or electrodes of devices covered by this subclass - G09G 2310/0264: Details of driving circuits - Y02E 10/549: Organic PV cells - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract The application discloses an organic light-emitting diode for a display panel. The organic light-emitting diode includes an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between every two adjacent emitting layers, wherein the charge generation layer includes a first layer unit and a second layer unit which are arranged in sequence, the first layer unit includes a hole injection material and a P-type semiconductor material doped in the hole injection material, and the second layer unit includes an electron transport material and ytterbium doped in the electron transport material, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%. ## Claims ### Claim 1 An organic light-emitting diode, comprising an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between the at least two adjacent emitting layers; wherein the charge generation layer comprises a first layer unit and a second layer unit, arranged in sequence between the at least two emitting layers, wherein the first layer unit comprises a hole injection material doped with a P-type semiconductor material, and wherein the second layer unit comprises an electron transport material doped with ytterbium, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%; wherein the P-type semiconductor material comprises the following compound: wherein n is an integer greater than or equal to 1, and X1, X2 and X3 each respectively has an independent structure of R′ is selected from any one of substituted aryl and substituted hetero aryl, and the substituent in the substituted aryl and substituted hetero aryl at least comprises one electron acceptor group. ### Claim 2 (depends on 1) The organic light-emitting diode according to claim 1, wherein a volume concentration of the P-type semiconductor material doped in the hole injection material ranges from 1% to 10%. ### Claim 3 (depends on 1) The organic light-emitting diode according to claim 1, wherein the hole injection material comprises the following compound: wherein R1, R2, R3, R4, R5, R6, R7 and R8 are all independently selected from at least one of hydrogen atom, substituted or unsubstituted C1-C6 alkyl, and substituted or unsubstituted C5-C15 aryl; and R9, R10, R11 and R12 respectively comprise an aromatic group. ### Claim 4 (depends on 1) The organic light-emitting diode according to claim 1, wherein a hole injection layer close to the anode and an electron transport layer close to the cathode are arranged between the anode and the cathode, wherein the hole injection layer comprises the hole injection material and the P-type semiconductor material doped in the hole injection material, and wherein the electron transport layer comprises the electron transport material and ytterbium doped in the electron transport material. ### Claim 5 (depends on 4) The organic light-emitting diode according to claim 4, wherein a material of the electron transport layer comprises a first group, wherein the first group is of a conjugated structure comprising three continuous benzene rings, wherein at least one carbon atom on the three continuous benzene rings is substituted by nitrogen atoms, and wherein the first group is of an axisymmetric structure. ### Claim 6 (depends on 5) The organic light-emitting diode according to claim 5, wherein the first group comprises: ### Claim 7 (depends on 1) The organic light-emitting diode according to claim 1, wherein the emitting layer comprises a fluorescent emitting layer or a phosphorescent emitting layer. ### Claim 8 (depends on 1) The organic light-emitting diode according to claim 1, wherein a number of the emitting layers is two or three. ### Claim 9 A display panel, comprising an organic light-emitting diode, wherein the organic light-emitting diode comprises an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between two adjacent emitting layers; wherein the charge generation layer comprises a first layer unit and a second layer unit arranged in sequence between the anode and the cathode, wherein the first layer unit comprises a hole injection material doped with a P-type semiconductor material, and wherein the second layer unit comprises an electron transport material doped with ytterbium, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%; wherein the P-type semiconductor material comprises the following compound: wherein n is an integer greater than or equal to 1, X1, X2 and X3 each respectively has an independent structure of R′ is selected from any one of substituted aryl and substituted hetero aryl, and the substituent in the substituted aryl and substituted hetero aryl at least comprises one electron acceptor group. ### Claim 10 (depends on 9) The display panel according to claim 9, wherein a volume concentration of the P-type semiconductor material doped in the hole injection material ranges from 1% to 10%. ### Claim 11 (depends on 9) The display panel according to claim 9, wherein the hole injection material comprises the following compound: wherein R1, R2, R3, R4, R5, R6, R7 and R8 are all independently selected from at least one of hydrogen atom, substituted or unsubstituted C1-C6 alkyl, and substituted or unsubstituted C5-C15 aryl; and R9, R10, R11 and R12 respectively comprise an aromatic group. ### Claim 12 (depends on 9) The display panel according to claim 9, wherein a hole injection layer close to the anode and an electron transport layer close to the cathode are arranged between the anode and the cathode, wherein the hole injection layer comprises the hole injection material and the P-type semiconductor material doped in the hole injection material, and wherein the electron transport layer comprises the electron transport material and ytterbium doped in the electron transport material. ### Claim 13 (depends on 12) The display panel according to claim 12, wherein a material of the electron transport layer comprises a first group; wherein the first group is of a conjugated structure comprising three continuous benzene rings, at least one carbon atom on the three continuous benzene rings is substituted by nitrogen atoms, and wherein the first group is of an axisymmetric structure. ### Claim 14 (depends on 13) The display panel according to claim 13, wherein the first group comprises: ### Claim 15 (depends on 9) The display panel according to claim 9, wherein the emitting layer comprises a fluorescent emitting layer or a phosphorescent emitting layer. ### Claim 16 (depends on 9) The display panel according to claim 9, wherein a number of the emitting layers is two or three. ### Claim 17 A display device, comprising a display panel, the display panel comprising an organic light-emitting diode, wherein the organic light-emitting diode comprises an anode, a cathode, at least two emitting layers arranged between the anode and the cathode, and a charge generation layer arranged between two adjacent emitting layers; wherein the charge generation layer comprises a first layer unit and a second layer unit arranged in sequence between the anode and the cathode, wherein the first layer unit comprises a hole injection material and a P-type semiconductor material doped in the hole injection material, and wherein the second layer unit comprises an electron transport material and ytterbium doped in the electron transport material, wherein a volume concentration of ytterbium doped in the electron transport material ranges from 1% to 5%; wherein the P-type semiconductor material comprises the following compound: wherein n is an integer greater than or equal to 1, X1, X2 and X3 each has an independent structure of R′ is selected from any one of substituted aryl and substituted hetero aryl, and the substituent in the substituted aryl and substituted hetero aryl at least comprises one electron acceptor group.