# US 10,312,292 B2 · X-ray detector

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- Number: US 10,312,292 B2
- Document ID: US10312292B2
- Status: Granted
- Kind: B2
- Application number: 15/757,994
- Filed: 2016-09-07
- Published: 2018-08-23
- Granted: 2019-06-04
- Earliest claimed: 2015-09-07
- Assignees: Rayence Co., Ltd.; VATECH EWOO Holdings Co., Ltd.
- Applicants: Rayence Co., Ltd.; VATECH EWOO Holdings Co., Ltd.
- Inventors: Sung Kyn Heo; Dong Hui Shin; Tae Woo Kim; Min Seok Yun
- Web page: https://patentgrep.com/patent/US10312292B2

## CPC

- G01T 1/24: with semiconductor detectors
- A61B 6/032: {Transmission computed tomography [CT]}
- A61B 6/502: {for diagnosis of breast, i.e. mammography}
- A61B 6/512: {Intraoral means}
- C09J 133/14: of esters containing halogen, nitrogen, sulfur or oxygen atoms in addition to the carboxy oxygen
- C09K 11/661: {Chalcogenides}
- C09K 11/664: {Halogenides (C09K11/661 takes precedence)}
- C09K 11/88: containing selenium, tellurium or unspecified chalcogen elements
- G01T 1/2018: {Scintillation-photodiode combinations}
- H01G 9/2018: {characterised by the ionic charge transport species, e.g. redox shuttles}
- H10K 30/40: comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
- H10K 30/81: Electrodes
- H10K 39/36: Devices specially adapted for detecting X-ray radiation
- H10K 85/30: Coordination compounds
- H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
- A61B 6/4233: {using matrix detectors}
- A61B 6/51: for dentistry
- H10K 30/88: Passivation; Containers; Encapsulations
- Y02E 10/542: Dye sensitized solar cells
- Y02E 10/549: Organic PV cells
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)
- C09J: ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES (preparation of glue or gelatine C09H)
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

Disclosed is a direct-conversion-type X-ray detector, including a first electrode on a substrate, a semiconductor structure including a photoconductor using a perovskite material on the first electrode, and a second electrode on the semiconductor structure.

## Claims

### Claim 1

An X-ray detector, comprising:
a first electrode on a substrate;
a semiconductor structure including a photoconductor using a perovskite material on the first electrode; and
a second electrode on the semiconductor structure,
wherein the substrate is a CMOS substrate or a plastic substrate, and an adhesive polymer formed between the first electrode and the photoconductor is further included.

### Claim 2 (depends on 1)

The X-ray detector of claim 1, wherein the perovskite material is represented by a chemical formula ABX3, A being Cs, methyl ammonium (CH3NH3) or formamidinium (NH2CH═NH2), B being Pb, Sn, Cu, Ni, Bi, Co, Fe, Mn, Cr, Cd, Ge, or Yb, and X being IxBr(1-x), IxCl(1-x), or BrxCl(1-x) (0.2≤x≤1, a real number).

### Claim 3 (depends on 1)

The X-ray detector of claim 1, wherein the semiconductor structure includes a hole transport layer and an electron transport layer, and the photoconductor is provided in a film form between the hole transport layer and the electron transport layer.

### Claim 4 (depends on 3)

The X-ray detector of claim 3, wherein the hole transport layer includes first and second hole transport layers.

### Claim 5 (depends on 1)

The X-ray detector of claim 1, wherein the semiconductor structure includes one of an electron transport layer and a hole transport layer and a photoconductor film having a type opposite thereto and configured such that the photoconductor is provided in a film form, or includes an electron transport layer and a hole transport layer, and when the semiconductor structure includes the electron transport layer and the hole transport layer, the photoconductor is provided in a form of particles inside one of the electron transport layer and the hole transport layer.

### Claim 6 (depends on 1)

The X-ray detector of claim 1, wherein the semiconductor structure includes a hole transport layer and an electron transport layer, with a photoconductor film having a P type disposed therebetween and configured such that the photoconductor is provided in a film form, or includes a hole transport layer and an electron transport layer, with an additional hole transport layer disposed therebetween and configured such that the photoconductor is provided in a form of particles therein.

### Claim 7 (depends on 1)

The X-ray detector of claim 1, wherein the adhesive polymer is PAP (polyacryloyl piperidine).

### Claim 8 (depends on 1)

The X-ray detector of claim 1, further comprising a sealing member configured to seal an entire stacking structure comprising the substrate, the first electrode, the semiconductor structure and the second electrode, or to seal an entire stacking structure comprising the substrate, the first electrode and the semiconductor structure.

### Claim 9 (depends on 8)

The X-ray detector of claim 8, wherein the sealing member is formed of any one or a mixture of at least two selected from among a polyethylene-based resin, a polypropylene-based resin, a cyclic polyolefin-based resin, a polystyrene-based resin, an acrylonitrile-styrene copolymer, an acrylonitrile-butadiene-styrene copolymer, a poly(vinyl chloride)-based resin, a fluorine-based resin, a poly(meth)acrylate-based resin, and a polycarbonate-based resin, or is formed of Parylene.

### Claim 10 (depends on 1)

The X-ray detector of claim 1, wherein a film of the photoconductor has a thickness of 200 μm˜800 μm when the X-ray detector is used for at least one of a dental CT sensor and a cephalo sensor, a thickness of 150 μm˜600 μm when the X-ray detector is used for a dental panorama sensor, a thickness of 100 μm˜450 μm when the X-ray detector is used for an intraoral (I/O) sensor, a thickness of 60 μm˜300 μm when the X-ray detector is used for a mammography sensor, and a thickness of 90 μm˜1000 μm when the X-ray detector is used for a medical fluoroscopy X-ray sensor.

### Claim 11 (depends on 1)

The X-ray detector of claim 1, wherein the semiconductor structure includes a photoconductor film using the perovskite material and a quantum dot material for converting incident X-rays into visible light.

### Claim 12 (depends on 11)

The X-ray detector of claim 11, wherein the quantum dot is a-Se, Cs, CdSe, CdS, PbO, or PbI2, and has a diameter of 1 nm˜100 nm.

### Claim 13 (depends on 11)

The X-ray detector of claim 11, wherein the quantum dot is provided in a form of being dispersed in the photoconductor film, or in a form of a film in contact with at least one of an upper surface and a lower surface of the photoconductor film.

### Claim 14 (depends on 13)

The X-ray detector of claim 13, wherein the semiconductor structure includes one of a hole transport layer and an electron transport layer, and one of the hole transport layer and the electron transport layer is disposed between one of the first and second electrodes and the photoconductor film configured such that the quantum dot is provided therein or thereon.

### Claim 15 (depends on 13)

The X-ray detector of claim 13, wherein the semiconductor structure includes a hole transport layer and an electron transport layer, the hole transport layer is disposed between one of the first and second electrodes and the photoconductor film configured such that the quantum dot is provided therein or thereon, and the electron transport layer is disposed between a remaining one of the first and second electrodes and the photoconductor film configured such that the quantum dot is provided therein or thereon.

### Claim 16 (depends on 13)

The X-ray detector of claim 13, wherein the film comprising the quantum dot has a thickness of 100 nm˜1000 μm.