# US 10,312,286 B2 · Magnetic sensor including resistor array including a plurality of resistive element sections each having magnetoresistance element

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- Number: US 10,312,286 B2
- Document ID: US10312286B2
- Status: Granted
- Kind: B2
- Application number: 14/982,059
- Filed: 2015-12-29
- Published: 2016-07-14
- Granted: 2019-06-04
- Earliest claimed: 2015-01-14
- Assignees: TDK Corporation
- Applicants: TDK Corporation
- Inventors: Toshihide Suto; Hiraku Hirabayashi
- Web page: https://patentgrep.com/patent/US10312286B2

## CPC

- H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)}
- G01R 33/098: {comprising tunnel junctions, e.g. tunnel magnetoresistance sensors}
- H10N 50/10: Magnetoresistive devices
- H10N 50/80: Constructional details
- H10B: ELECTRONIC MEMORY DEVICES
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A magnetic sensor for detecting a component of an external magnetic field in a specific direction includes a resistor array including a plurality of resistive element sections each having a magnetoresistance element. Each of the plurality of resistive element sections has a different output characteristic curve with respect to the component of the external magnetic field in the specific direction.

## Claims

### Claim 1

A magnetic sensor for detecting a component of an external magnetic field in a specific direction, comprising
a plurality of resistive element sections that are connected to each other to form a resistor array, each of the plurality of resistive element sections having only one magnetoresistance element,
wherein each of the plurality of resistive element sections has a different output characteristic curve with respect to the component of the external magnetic field in the specific direction, and
wherein the output characteristic curve of each of the plurality of resistive element sections is the behavior of the resistance of a respective resistive element section with respect to the external magnetic field.

### Claim 2 (depends on 1)

The magnetic sensor according to claim 1, wherein the plurality of resistive element sections are classified into at least two groups of resistive element sections including a first group and a second group, and each of the first group and the second group has a different output characteristic curve with respect to the component of the external magnetic field in the specific direction.

### Claim 3 (depends on 1)

The magnetic sensor according to claim 1, wherein the magnetoresistance element includes a pinned layer whose magnetization direction is fixed, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is interposed between the pinned layer and the free layer.

### Claim 4 (depends on 3)

The magnetic sensor according to claim 3, wherein
the pinned layer of the magnetoresistance element is made up of a plurality of separate pinned layers in the plurality of resistive element sections, respectively,
the free layer of the magnetoresistance element is made up of a plurality of separate free layers in the plurality of resistive element sections, respectively, and
the magnetization of the plurality of separate pinned layers in the pinned layer of the magnetoresistance element are fixed along the specific direction, and an easy axis of magnetization of the plurality of separate free layers in the free layer have different directions for each of the plurality of separate free layers.

### Claim 5 (depends on 4)

The magnetic sensor according to claim 4, wherein each of the resistive element sections further includes a bias magnetic field generating section which applies a bias magnetic field to the magnetoresistance element, and the bias magnetic field applied to the free layer of the magnetoresistance element in each of the plurality of resistive element sections has a different intensity in the specific direction.

### Claim 6 (depends on 5)

The magnetic sensor according to claim 5, wherein the bias magnetic field generating section in each of the plurality of resistive element sections has a different relative position with respect to the magnetoresistance element.

### Claim 7 (depends on 5)

The magnetic sensor according to claim 5, wherein the bias magnetic field generating section in each of the plurality of resistive element sections has a different shape in a plane perpendicular to a film forming direction of the magnetoresistance element.

### Claim 8 (depends on 4)

The magnetic sensor according to claim 4, wherein the free layer of the magnetoresistance element in each of the plurality of resistive element sections has a different shape magnetic anisotropy.

### Claim 9 (depends on 3)

The magnetic sensor according to claim 3, wherein the magnetoresistance element is a tunnel magnetoresistance element using a tunnel barrier layer as the spacer layer.

### Claim 10 (depends on 1)

The magnetic sensor according to claim 1, wherein a plurality of the resistor arrays form a bridge circuit.

### Claim 11 (depends on 1)

The magnetic sensor according to claim 1, wherein
each of the plurality of resistive element sections includes a plurality of resistive elements, each of the plurality of resistive elements in a given resistive element section having a same output characteristic curve with respect to the component of the external magnetic field in the specific direction.