# US 10,312,284 B2 · Semiconductor device and semiconductor device manufacturing method

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- Number: US 10,312,284 B2
- Document ID: US10312284B2
- Status: Granted
- Kind: B2
- Application number: 15/961,919
- Filed: 2018-04-25
- Published: 2018-08-23
- Granted: 2019-06-04
- Earliest claimed: 2015-09-24
- Assignees: Lapis Semiconductor Co., Ltd.
- Applicants: LAPIS Semiconductor Co., Ltd.
- Inventors: Hiroki Kasai
- Web page: https://patentgrep.com/patent/US10312284B2

## CPC

- H10F 39/189: {X-ray, gamma-ray or corpuscular radiation imagers}
- G01T 1/24: with semiconductor detectors
- H10F 30/298: the devices being characterised by field-effect operation, e.g. MIS type detectors
- H10F 30/301: {the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation}
- H10F 39/1892: {Direct radiation image sensors}
- H10F 77/206: {for devices having potential barriers}
- H10F 77/933: {for devices having potential barriers}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- G01T: MEASUREMENT OF NUCLEAR OR X-RADIATION (radiation analysis of materials, mass spectrometry G01N23/00; tubes for determining the presence, intensity, density or energy of radiation or particles H01J47/00)

## Abstract

A semiconductor device including a first semiconductor layer including a first region and a second region adjacent to the first region; a first insulator layer provided above the first semiconductor layer; an intermediate semiconductor layer, having an n-type conduction, provided above the first region of the first semiconductor layer and above the first insulator layer; a second insulator layer provided above the intermediate semiconductor layer; a second semiconductor layer provided above the first region of the first semiconductor layer and above the second insulator layer; a sensor formed in the second region of the first semiconductor layer; a contact electrode connected to the intermediate semiconductor layer; and a circuit element formed in the second semiconductor layer.

## Claims

### Claim 1

A semiconductor device comprising:
a first semiconductor layer including a first region and a second region;
an insulator layer provided above the first semiconductor layer;
a second semiconductor layer provided above the first region of the first semiconductor layer and above the insulator layer;
an n-type conduction region provided under the second semiconductor layer;
a second element formed in the second region of the first semiconductor layer;
a first electrode connected to the n-type conduction region;
a second electrode connected to the second semiconductor layer;
a third electrode connected to the first electrode and the second region; and
a first element formed in the second semiconductor layer.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein:
the second element is a sensor that includes a p-type semiconductor region and an n-type semiconductor region provided at a face at an insulator layer side of the first semiconductor layer, and a back face electrode provided at a face of the first semiconductor layer at an opposite side from the face at the insulator layer side of the first semiconductor layer; and an anode of a power source is connected to the n-type semiconductor region and to the back face electrode, and a cathode of the power source is connected to the p-type semiconductor region and to the first electrode.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the first element is a transistor.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, wherein the second electrode is shorter than the first electrode, and the third electrode is longer than the second electrode.

### Claim 5

A semiconductor device comprising:
a first semiconductor layer including a first region and a second region;
an insulator layer provided above the first semiconductor layer;
a second semiconductor layer provided above the first region of the first semiconductor layer and above the insulator layer;
a p-type conduction region provided under the second semiconductor layer;
a second element formed in the second region of the first semiconductor layer;
a first electrode connected to the p-type conduction region;
a second electrode connected to the second semiconductor layer;
a third electrode connected to the first electrode and the second region; and
a first element formed in the second semiconductor layer,
wherein the p-type conduction region has a thickness such that a first inversion layer formed at an insulator layer side of the p-type conduction region and a second inversion layer formed at a second semiconductor layer side of the p-type conduction region do not contact each other.

### Claim 6 (depends on 5)

The semiconductor device of claim 5, further comprising a second insulator layer provided between the p-type conduction region and the second semiconductor layer,
wherein the first inversion layer is formed due to positive charges retained at a vicinity of a boundary between the p-type conduction region and the insulator layer, and the second inversion layer is formed due to positive charges retained at a vicinity of a boundary between the p-type conduction region and the second insulator layer.

### Claim 7 (depends on 5)

The semiconductor device of claim 5, wherein a thickness of the p-type conduction region is 150 nm or greater.

### Claim 8 (depends on 5)

The semiconductor device of claim 5, wherein:
the second element is a sensor that includes a p-type semiconductor region and an n-type semiconductor region provided at a face at an insulator layer side of the first semiconductor layer, and a back face electrode provided at a face of the first semiconductor layer at an opposite side from the face at the insulator layer side of the first semiconductor layer; and
an anode of a power source is connected to the n-type semiconductor region and to the back face electrode, and a cathode of the power source is connected to the p-type semiconductor region and to the first electrode.

### Claim 9 (depends on 5)

The semiconductor device of claim 5, wherein the first element is a transistor.

### Claim 10 (depends on 5)

The semiconductor device of claim 5, wherein the second electrode is shorter than the first electrode, and the third electrode is longer than the second electrode.