# US 10,312,281 B2 · Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,281 B2 - Document ID: US10312281B2 - Status: Granted - Kind: B2 - Application number: 15/411,470 - Filed: 2017-01-20 - Published: 2017-05-11 - Granted: 2019-06-04 - Earliest claimed: 2011-10-04 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Kentaro Akiyama - Web page: https://patentgrep.com/patent/US10312281B2 ## CPC - H10F 39/809: {of hybrid image sensors} - H04N 25/766: comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power - H10F 39/011: {Manufacture or treatment of image sensors covered by group H10F39/12} - H10F 39/018: {of hybrid image sensors} - H10F 39/026: {Wafer-level processing} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F 39/807: {Pixel isolation structures} - H10F 39/811: {Interconnections} - H10W 20/023: {the interconnections being through-semiconductor vias} - H10W 20/0234: {comprising etching via holes that stop on pads or on electrodes} - H10W 20/0242: {comprising etching via holes from the back sides of the chips, wafers or substrates} - H10W 20/0265: {characterised by the sidewall insulation} - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/2125: {Top-view shapes} - H10W 20/2134: {TSVs extending from the semiconductor wafer into back-end-of-line layers} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A back-illuminated type solid-state image pickup unit in which a pad wiring line is provided on a light reception surface and which is capable of improving light reception characteristics in a photoelectric conversion section by having a thinner insulating film in a pixel region. The solid-state image pickup unit includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. A through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. A pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region. ## Claims ### Claim 1 A solid-state image pickup unit comprising: a sensor substrate having a pixel region in which photoelectric conversion sections are arranged in an array; a circuit on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate; a through hole via in a peripheral region located outside the pixel region and extending to the circuit from the light reception surface of the sensor substrate; a pad wiring line directly laminated on the through hole via on the light reception surface in the peripheral region; and an insulating layer disposed adjacent to the through hole via and opposite the light-receiving surface from the pad wiring line, wherein, the insulating layer has a first thickness corresponding to the peripheral region and a second thickness corresponding to the pixel region, the first thickness is different than the second thickness, the pad wiring line is disposed above the first thickness of the insulating layer, and a light reception opening is disposed above the second thickness of the insulating layer. ### Claim 2 (depends on 1) The solid-state image pickup unit according to claim 1, further comprising: a protective film provided on the light reception surface to cover the pad wiring line; an on-chip lens provided on the protective film; and a pad opening provided to the protective film to expose the pad wiring line. ### Claim 3 (depends on 1) The solid-state image pickup unit according to claim 1, wherein a device is disposed in a position superimposed on the pad wiring line on the surface of the sensor substrate. ### Claim 4 (depends on 1) The solid-state image pickup unit according to claim 1, wherein the through hole via includes an embedded wiring portion provided to the light reception surface of the sensor substrate and a through hole via portion formed integrally with the embedded wiring portion, and the pad wiring line is directly laminated on the embedded wiring portion. ### Claim 5 (depends on 4) The solid-state image pickup unit according to claim 4, wherein the embedded wiring portion is embedded on the light reception surface of the sensor substrate. ### Claim 6 (depends on 1) The solid-state image pickup unit according to claim 1, wherein a light-shielding film having light reception openings corresponding to the photoelectric conversion sections is provided on the light reception surface in the pixel region, and the pad wiring line and the light-shielding film are configured of a same layer. ### Claim 7 (depends on 1) The solid-state image pickup unit according to claim 1, further comprising: a light-shielding film having light reception openings corresponding to the photoelectric conversion sections, wherein the light-shielding film is provided on the second thickness, and wherein the pad wiring line is provided on the first thickness. ### Claim 8 (depends on 1) The solid-state image pickup unit according to claim 1, wherein the insulating layer has a laminate structure formed with use of different materials, and a film of an upper layer portion of the laminate structure is removed in the pixel region. ### Claim 9 (depends on 1) The solid-state image pickup unit according to claim 1, wherein a circuit substrate comprising a drive circuit is bonded to the surface of the sensor substrate. ### Claim 10 (depends on 1) The solid-state image pickup unit according to claim 1, wherein a light-receiving surface side of the second thickness is closer to the sensor substrate than a light-receiving surface side of the first thickness. ### Claim 11 (depends on 10) The solid-state image pickup unit according to claim 10, further comprising: a protective film provided on the light reception surface to cover the pad wiring line; and a pad opening provided to the protective film to expose the pad wiring line. ### Claim 12 (depends on 11) The solid-state image pickup unit according to claim 11, further comprising: an on-chip lens provided on the protective film. ### Claim 13 (depends on 10) The solid-state image pickup unit according to claim 10, wherein a device is disposed in a position superimposed on the pad wiring line on the surface of the sensor substrate. ### Claim 14 (depends on 10) The solid-state image pickup unit according to claim 10, wherein the through hole via includes an embedded wiring portion provided to the light reception surface of the sensor substrate and a through hole via portion formed integrally with the embedded wiring portion, and the pad wiring line is directly laminated on the embedded wiring portion. ### Claim 15 (depends on 14) The solid-state image pickup unit according to claim 14, wherein the embedded wiring portion is embedded on the light reception surface of the sensor substrate. ### Claim 16 (depends on 10) The solid-state image pickup unit according to claim 10, wherein a light-shielding film having light reception openings corresponding to the photoelectric conversion sections is provided on the light reception surface in the pixel region, and the pad wiring line and the light-shielding film are configured of a same layer. ### Claim 17 (depends on 10) The solid-state image pickup unit according to claim 10, further comprising: a light-shielding film having light reception openings corresponding to the photoelectric conversion sections, wherein the light-shielding film is provided on the second thickness, and the pad wiring line is provided on the first thickness. ### Claim 18 (depends on 10) The solid-state image pickup unit according to claim 10, wherein the insulating layer has a laminate structure formed with use of different materials, and a film of an upper layer portion of the laminate structure is removed in the pixel region. ### Claim 19 (depends on 10) The solid-state image pickup unit according to claim 10, wherein a circuit substrate comprising a drive circuit is bonded to the surface of the sensor substrate. ### Claim 20 (depends on 1) The solid-state image pickup unit according to claim 1, wherein a distance from the sensor substrate to a light-receiving surface side of the second thickness is less than a distance from the sensor substrate to a light-receiving surface side of the first thickness. ### Claim 21 (depends on 20) The solid-state image pickup unit according to claim 20, further comprising: a protective film provided on the light reception surface to cover the pad wiring line; and a pad opening provided to the protective film to expose the pad wiring line. ### Claim 22 (depends on 21) The solid-state image pickup unit according to claim 21, further comprising: an on-chip lens provided on the protective film. ### Claim 23 (depends on 20) The solid-state image pickup unit according to claim 20, wherein a device is disposed in a position superimposed on the pad wiring line on the surface of the sensor substrate. ### Claim 24 (depends on 20) The solid-state image pickup unit according to claim 20, wherein the through hole via includes an embedded wiring portion provided to the light reception surface of the sensor substrate and a through hole via portion formed integrally with the embedded wiring portion, and the pad wiring line is directly laminated on the embedded wiring portion. ### Claim 25 (depends on 24) The solid-state image pickup unit according to claim 24, wherein the embedded wiring portion is embedded on the light reception surface of the sensor substrate. ### Claim 26 (depends on 20) The solid-state image pickup unit according to claim 20, wherein a light-shielding film having light reception openings corresponding to the photoelectric conversion sections is provided on the light reception surface in the pixel region, and the pad wiring line and the light-shielding film are configured of a same layer. ### Claim 27 (depends on 20) The solid-state image pickup unit according to claim 20, further comprising: a light-shielding film having light reception openings corresponding to the photoelectric conversion sections, wherein the light-shielding film is provided on the second thickness, and the pad wiring line is provided on the first thickness. ### Claim 28 (depends on 20) The solid-state image pickup unit according to claim 20, wherein the insulating layer has a laminate structure formed with use of different materials, and a film of an upper layer portion of the laminate structure is removed in the pixel region. ### Claim 29 (depends on 20) The solid-state image pickup unit according to claim 20, wherein a circuit substrate comprising a drive circuit is bonded to the surface of the sensor substrate. ### Claim 30 An electronic apparatus, comprising: a solid-state image pickup unit comprising: a sensor substrate having a pixel region in which photoelectric conversion sections are arranged in an array; a circuit on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate; a through hole via in a peripheral region located outside the pixel region and extending to the circuit from the light reception surface of the sensor substrate; a pad wiring line directly laminated on the through hole via on the light reception surface in the peripheral region; and an insulating layer disposed adjacent to the through hole via and opposite the light-receiving surface from the pad wiring line, wherein, the insulating layer has a first thickness corresponding to the peripheral region and a second thickness corresponding to the pixel region, the first thickness is different than the second thickness the pad wiring line is disposed above the first thickness of the insulating layer, and a light reception opening is disposed above the second thickness of the insulating layer.