# US 10,312,276 B2 · Image sensor package to limit package height and reduce edge flare > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,312,276 B2 - Document ID: US10312276B2 - Status: Granted - Kind: B2 - Application number: 15/666,901 - Filed: 2017-08-02 - Published: 2019-02-07 - Granted: 2019-06-04 - Earliest claimed: 2017-08-02 - Assignees: OmniVision Technologies, Inc. - Applicants: OmniVision Technologies, Inc. - Inventors: Wei-Chih Chien; Wei-Feng Lin - Web page: https://patentgrep.com/patent/US10312276B2 ## CPC - H10F 39/804: {Containers or encapsulations} - H10F 39/8057: {Optical shielding} - H10F 39/811: {Interconnections} - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 70/681: {comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage} - H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu} - H10W 72/29: Bond pads specially adapted therefor - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An image sensor package, comprising a silicon substrate; an image sensor pixel array that is formed on the silicon substrate; a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate; a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; at least one solder ball that is electrically coupled to the RDL; and a cover glass that is coupled to the RDL. No part of the RDL is located directly above or below the image sensor pixel array. No part of the at least one solder ball is located directly above or below the silicon substrate. A dark material layer is implemented to prevent an edge flare effect of the image sensor pixel array. ## Claims ### Claim 1 An image sensor package, comprising: (a) a silicon substrate that includes a first substrate surface, and a second substrate surface that is opposite to the first substrate surface; (b) an image sensor pixel array that is formed on the silicon substrate, and is positioned at the first substrate surface; (c) a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate, and is positioned at the first substrate surface; (d) a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; (e) at least one solder ball that is electrically coupled to the RDL, wherein the solder ball is situated to sides of the silicon substrate, no parts of the solder ball overlaps above the silicon substrate and no parts of the solder ball overlaps under the silicon substrate; and (f) a cover glass that is directly bonded to the RDL, wherein the cover glass is located directly above the image sensor pixel array and wherein the RDL is situated to sides of the image sensor pixel array; (g) an insulation material layer that is bonded to the RDL; (h) an adhesive layer that causes the RDL to adhere to the silicon substrate; wherein the adhesive layer is bonded to the insulation material layer, and to the first substrate surface of the silicon substrate; wherein the RDL includes a first RDL surface and a second RDL surface that is opposite to the first RDL surface; wherein the first RDL surface faces the same direction as the first substrate surface; and wherein the second RDL surface faces the same direction as the second substrate surface. ### Claim 2 (depends on 1) The image sensor package of claim 1, wherein the at least one solder ball is electrically coupled to the second RDL surface. ### Claim 3 (depends on 2) The image sensor package of claim 2, wherein the RDL is electrically coupled to the peripheral circuit region through a metallic member. ### Claim 4 (depends on 2) The image sensor package of claim 2, wherein no part of the RDL is located directly above the image sensor pixel array, and wherein no part of the RDL is located directly below the image sensor pixel array. ### Claim 5 (depends on 1) The image sensor package of claim 1, wherein the insulation material layer and the adhesive layer form a dam that is positioned on the first substrate surface, and is located to all sides of the image sensor pixel array; and wherein the dam has a side wall that faces towards the image sensor pixel array. ### Claim 6 (depends on 5) The image sensor package of claim 5, further including a dark material layer that covers at least a part of the side wall of the dam. ### Claim 7 (depends on 6) The image sensor package of claim 6, wherein the dark material layer comprises a black polymer material. ### Claim 8 (depends on 6) The image sensor package of claim 6, wherein the dark material layer has a reflectivity of at most one percent. ### Claim 9 An image sensor package, comprising: (a) a silicon substrate that includes a first substrate surface, and a second substrate surface that is opposite to the first substrate surface; (b) an image sensor pixel array that is formed on the silicon substrate, and is positioned at the first substrate surface; (c) a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate, and is positioned at the first substrate surface; (d) a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; (e) at least one solder ball that is electrically coupled to the RDL, wherein the solder ball is situated to sides of the silicon substrate, no parts of the solder ball overlaps above the silicon substrate and no parts of the solder ball overlaps under the silicon substrate; and (f) a cover glass that is coupled to the RDL and wherein the RDL is situated to sides of the image sensor pixel array; (g) an insulation material layer that is bonded to the RDL; (h) an adhesive layer that causes the RDL to adhere to the silicon substrate; wherein the adhesive layer is bonded to the insulation material layer, and to the first substrate surface of the silicon substrate; wherein the RDL includes a first RDL surface and a second RDL surface that is opposite to the first RDL surface; wherein the first RDL surface faces the same direction as the first substrate surface; and wherein the second RDL surface faces the same direction as the second substrate surface; further including a cover layer that is bonded to the first RDL surface of the RDL and the cover glass. ### Claim 10 (depends on 9) The image sensor package of claim 9, wherein the cover layer, the insulation material layer, and the adhesive layer form a dam that is positioned on the first substrate surface, and is located to all sides of the image sensor pixel array; and wherein the dam has a side wall that faces towards the image sensor pixel array. ### Claim 11 (depends on 10) The image sensor package of claim 10, further including a dark material layer that covers at least a part of the side wall of the dam. ### Claim 12 An image sensor system comprising an image sensor package, wherein the image sensor package includes: (a) a silicon substrate that includes a first substrate surface, and a second substrate surface that is opposite to the first substrate surface; (b) an image sensor pixel array that is formed on the silicon substrate, and is positioned at the first substrate surface; (c) a peripheral circuit region that is formed around the image sensor pixel array on the silicon substrate, and is positioned at the first substrate surface; (d) a redistribution layer (RDL) that is electrically coupled to the peripheral circuit region; (e) at least one solder ball that is electrically coupled to the RDL, wherein the solder ball is situated to sides of the silicon substrate, no parts of the solder ball overlaps above the silicon substrate and no parts of the solder ball overlaps under the silicon substrate; and (f) a cover glass that is directly bonded to the RDL, wherein the cover glass is located directly above the image sensor pixel array and wherein the RDL is situated to sides of the image sensor pixel array; (g) an insulation material layer that is bonded to the RDL; (h) an adhesive layer that causes the RDL to adhere to the silicon substrate; wherein the adhesive layer is bonded to the insulation material layer, and to the first substrate surface of the silicon substrate; wherein the RDL includes a first RDL surface and a second RDL surface; wherein the first RDL surface faces the same direction as the first substrate surface; and wherein the second RDL surface faces the same direction as the second substrate surface. ### Claim 13 (depends on 12) The image sensor system of claim 12, wherein the at least one solder ball is electrically coupled to the second RDL surface. ### Claim 14 (depends on 13) The image sensor system of claim 13, wherein no part of the RDL is located directly above the image sensor pixel array; and no part of the RDL is located directly below the image sensor pixel array. ### Claim 15 (depends on 14) The image sensor system of claim 14, wherein the insulation material layer and the adhesive layer form a dam that is positioned on the first substrate surface, and is located to all sides of the image sensor pixel array; and wherein the dam has a side wall that faces towards the image sensor pixel array. ### Claim 16 (depends on 15) The image sensor system of claim 15, further including a dark material layer that covers at least a part of the side wall of the dam.